| ECR-PECVD制备Si3N4薄膜的光学特性研究 |
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| 引用本文： | 陈俊芳,丁振峰.ECR-PECVD制备Si3N4薄膜的光学特性研究[J].光子学报,1997,26(9):836-840. |
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| 作者姓名： | 陈俊芳 丁振峰 |
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| 作者单位： | [1]华南师范大学量子电子研究所 [2]中国科学院等离子体物理研究所 |
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| 摘 要： | 本文研究了ECR-PECVD制备的Si3N4薄膜的光学特性.得到的Si3N4薄膜具有光致发光效应,在280℃沉积制备的Si3N4薄膜的光致发光波长为400nm,具有较好的单色性.测试分析了Si3N4薄膜对可见光、红外光具有较高的透射性能,Si3N4薄膜可作为红外光的增速减反射膜.
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| 关 键 词： | ECR-PECVD Si3N4薄膜 光致发光 增速膜 |
| 收稿时间： | 1996-12-20 |
INVESTIGATION ON THE OPTICAL PROPERTIES OF Si_3N_4 THIN FILM PREPARED BY ECR-PECVD |
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| Chen Junfang, Wang Weixiang, Liao Changjun, Liu Songhao.INVESTIGATION ON THE OPTICAL PROPERTIES OF Si_3N_4 THIN FILM PREPARED BY ECR-PECVD[J].Acta Photonica Sinica,1997,26(9):836-840. |
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| Authors: | Chen Junfang Wang Weixiang Liao Changjun Liu Songhao |
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| Institution: | 1. Institute of Quantum Electronics, South China Normal University, Guangzhou 510631;2. Institute of Plasma Physics, Academia Sinica, Hefei 230031 |
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| Abstract: | In this paper,the optical properties of Si3N4 thin film prepared by ECR-PECVD has beenstudied. The photoluminescence effect of Si3N4 thin film has been obtained. When depositiontemperature is 280℃,the photolumicescence wavelength of Si3N4 thin film prepared by ECR-PECVD is400nm and has fine monochromaticity. The transmittance of Si3N4 thin film on infrared (IR) andvisible light has been measured and analysed,Si3N4 thin film can be used as IR antireflex film. |
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| Keywords: | ECR-PECVD Si3N4 thin film Photoluminescence effect Antireflex film |
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