Comprehensive uniformity analysis of GaAs-based VCSEL epiwafer by utilizing the on-wafer test capability

A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry–Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light–current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.     

Analysis of single-mode condition and high-order modes discrimination in photonic crystal VCSEL

A new technique for analyzing the single-mode condition and mode discrimination of high-order modes in photonic crystal VCSEL is proposed and reported in this paper. The technique proposed is a semi-empirical approach that uses analytical analysis based on experimental data. For that purpose, single- and multimode photonic crystal VCSEL devices are fabricated and characterized for comparison of device performance. The mode width for first- and second-order mode of PhC VCSEL is computed for analyzing the mode behavior. In order to verify the findings, the fabricated single- and multimode devices are analyzed using finite difference frequency domain technique for the purpose of showing the loss as a function of mode order for the PhC VCSEL. The results show close agreement between the computed and experiment findings, justifying the use of the proposed semi-empirical technique for analyzing single-mode condition and of high-order modes discrimination in photonic crystal VCSEL.     

Highly confined and continuous single-mode operation of self-align photonic crystal oxide VCSEL

In this letter, we report on single-mode operation of originally multi-mode oxide VCSEL by using etched photonic crystal air holes and unique trench structure. The device fabrication utilized conventional photolithography; with simplified lithography step of self-aligning the photonic crystal and trench structures to the laser aperture for efficient and vigorous device processing. The fabricated photonic crystal VCSEL with trench device exhibits a single-mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single-mode output spectra at wide operating current range. The results are compared with conventional multi-mode oxide VCSEL of similar device geometry. In addition, theoretical analysis is presented for developing further understanding of the photonic crystal VCSEL.     

径向桥电极高功率垂直腔面发射激光器

为改善高功率垂直腔面发射半导体激光器的热特性,提高它的输出功率,研制了新型径向桥电极高功率垂直腔面发射半导体激光器器件,对新型半导体激光器的结构模型进行理论分析表明,采用径向桥式电极可以降低器件P型DBR电阻,减小焦耳热;降低热阻,提高器件的散热能力。实验制备了出光孔径同为200μm的径向桥电极与常规电极的高功率垂直腔面发射半导体激光器,并对器件的性能进行了实验对比测试。结果表明径向桥电极高功率垂直腔面发射半导体激光器器件的微分电阻为0.43Ω;室温下最大输出功率可达340 mW,是常规电极垂直腔面发射半导体激光器的1.7倍;器件的热阻为0.095℃/mW,在80℃时,仍能正常激射,具有良好的热特性,径向桥电极高功率垂直腔面发射半导体激光器的光电特性与温度特性要远好于常规电极的高功率垂直腔面发射半导体激光器器件。     

Room temperature continuous wave low threshold current 850 nm ion implanted vertical cavity surface emitting laser using tungsten wires as mask

Vertical cavity surface emitting laser (VCSEL) emitting at 850 nm plays more important role in local fiber communication. Most of the VCSEL products emitting at 850 nm are fabricated by ion implanting. Their threshold current is about 4–6 mA. Using tungsten wires as mask, we developed the parameter of implantation and fabricated 850 nm VCSEL under room temperature CW (continuous wave) operation. The threshold current was 1.4 mA, which was lower than that of most similar devices reported before. The resistance of the device was 206 Ω. The light power was 0.92 mW at 6.74 mA under room temperature CW operation, while the light power did not achieve obvious saturation. The most remarkable advantage was that the fabrication method was simple and the optimization was available to implanting parameter.     

Optimization of electro-optical characteristics of GaAs-based oxide confinement VCSEL

An experimental study has been presented of the oxide-confined vertical-cavity surface-emitting lasers (VCSEL) operating in the 850 nm region of the electromagnetic spectrum. In this regard, various relevant VCSEL samples with numerous oxide aperture sizes have been fabricated and characterized. Thorough investigations of the electrical as well as optical characteristics of the fabricated samples have been performed which includes the overall device performance as a function of the oxidize aperture sizes. It is reported that the VCSEL with oxide aperture size <10 μm require low threshold currents (<1 mA). Further, the differential quantum efficiencies up to 28% were measured for a number of these devices. It is found that devices employing oxide aperture of 10 to 15 μm shows promising electro-optical characteristics for 850 nm oxide VCSEL optimization.     

High-power vertical-cavity surface-emitting lasers bonded with efficient packaging

<正>High-power vertical-cavity surface-emitting lasers(VCSELs) are processed using a wet thermal-selective oxidation technique.The VCSEL chips are packaged by employing three different bonding methods of silver solder,In-Sn solder,and metalized diamond heat spreader.After packaging,optical output power, wavelength shift,and thermal resistance of the devices are measured and compared in an experiment.The device packaged with a metalized diamond heat spreader shows the best operation characteristics among the three methods.The 200-μm-diameter device bonded with a metalized diamond heat spreader produces a continuous wave optical output power of 0.51 W and a corresponding power density of 1.6 kW/cm~2 at room temperature.The thermal resistance is as low as 10 K/W.The accelerated aging test is also carried out at high temperature under constant current mode.The device operates for more than 1000 h at 70℃,and the total degradation is only about 10%.     

894nm高温垂直腔面发射激光器及其芯片级铯原子钟系统的应用

报道了自行研制的894 nm高温垂直腔面发射激光器(VCSEL)以及基于此类器件的芯片级铯原子钟系统的应用实验结果.根据芯片级铯原子钟对VCSEL在特定高温环境下产生894.6 nm线偏振激光的要求,对器件的量子阱增益及腔模位置等材料结构参数进行了优化,确定增益-腔模失谐量为-15 nm,使器件的基本性能在高温环境下保持稳定.研制的VCSEL器件指标为:20—90?C温度范围内阈值电流保持在0.20—0.23 m A,0.5 m A工作电流下输出功率0.1 mW;85.6?C温度环境下激光波长894.6 nm,偏振选择比59.8:1;采用所研制的VCSEL与铯原子作用,获得了芯片级铯原子钟实施激光频率稳频的吸收谱线和实施微波频率稳频的相干布居囚禁谱线.     

On the characterization of a new type of oxide-confined 850 nm GaAs-based vertical-cavity surface-emitting laser

Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced for the device fabrication, which finally provide much better efficiency of the proposed VCSEL structure. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. A very small deviation from the proposed structure will essentially affect the features of the output light.     

1.3μm量子点垂直腔面发射激光器高频响应的优化设计

结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点，计算了有源层p掺杂结构的量子点VCSEL的材料增益和3 dB带宽，发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性，分析了对VCSEL结构的要求；分析了分布参数对频率特性的影响，对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3 μm量子点VCSEL结构. 关键词： 量子点 垂直腔面发射激光器 微分增益 3 dB带宽     

Enhanced thermal stability of VCSEL array by thermoelectric analysis-based optimization of mesas distribution

The thermal stability of a vertical-cavity surface-emitting laser(VCSEL) array is enhanced by redesigning the mesa arrangement. Based on a thermoelectric coupling three-dimensional(3D) finite-element model, an optimized VCSEL array is designed. The effects of this optimization are studied experimentally. Power density characteristics of VCSEL arrays with different mesa configuration are obtained under different thermal stress in which the optimized device shows improved performance. Optimized device also shows better stability from measured spectra and calculated thermal resistances. The experimental results prove that our simulation model and optimization is instructive for VCSEL array design.     

Effect on polarization control in 850 nm vertical cavity surface emitting laser fabricated by H ion inclined implantation using tungsten wire as mask

Polarization character measurements on VCSEL devices, fabricated by ion inclined implantation with various parameters using tungsten wire as mask, were performed. The effect of polarization mode control was observed in these devices with square injected current aperture formed by distributed ion during implantation. Moreover, the effect depended on the size of the square injected current aperture. The device with highest polarization mode suppression ratio (PMSR) up to 14 dB was obtained, which kept the operation of linear polarization state at 3.4I_th injected current. The further optimization to obtain the better polarization control effect is available. What the most valuable is that the mechanism of polarization control effect is completely self-formed during device processing. Furthermore, this method is the simplest technique to apply in industry, as much as we know.     

1.55-μm Si-based MOEMS optical tunable filter

A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.     

Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence

The mode splitting induced by electro-optic birefringence in a P-I-N InGaAs/GaAs/A1GaAs vertical-cavity surface- emitting laser （VCSEL） has been studied by polarized electroluminescence （EL） at room temperature. The polarized EL spectra with E｜｜[110] and E ｜｜ [150] directions, are extracted for different injected currents. The mode splitting of the two orthogonal polarized modes for a VCSEL device is determined, and its value increases linearly with the increasing injected current due to electro-optic birefringence; This article demonstrates that the polarized EL is a powerful tool to study the mode splitting and polarization anisotropy of a VCSEL device.     

氧化型垂直腔面发射激光器的常见失效模式和机理分析

氧化型垂直腔面发射激光器(VCSEL)在高速光通信中有着广泛的应用,应用过程中的可靠性是一个非常重要的指标,要求有高寿命和低失效率.为了更好地了解VCSEL在应用过程中的失效模式和机理,提升器件的可靠性,本文从器件设计、加工制造和应用过程等3个环节总结分析了氧化型VCSEL的常见失效模式、产生原因和机理,并提出了适当的...     

High-performance 850 nm vertical-cavity surface-emitting laser in Gigabit Ethernet network

High-performance oxide vertical-cavity surface-emitting (VCSEL) laser is fabricated, and its usefulness is demonstrated as a suitable transmitting light source at 850 nm operating wavelength for Gigabit Ethernet application. Utilization of barrier reduction layers reveals low-threshold current requirement for operation at high modulation bandwidth. The electrical and optical characteristics, measured from the fabricated VCSEL, are simulated for Gigabit Ethernet transmission. Data rates of 1.25 Gbps with a bit error rate of 10⁻¹¹ are achieved by the use of a specific multimode network simulator.     

分布反射面发射垂直微腔半导体激光器的微腔效应

从理论上分析了作为垂直腔面发射半导体激光器反馈面的异质多层结构对光腔中激光传输振荡过程的影响．指出其相位匹配和等效反射面位置对改善激光器性能的重要作用．说明目前这种被认为很有希望的微腔结构，实际上难以观察到微腔效应的物理根源，并指出其改进的途径． 关键词：     

Mode-Stabilized Operation in a Microlens-Integrated 980 nm Vertical-Cavity Surface-Emitting Laser

Microlens-integrated 980 nm vertical-cavity surface-emitting lasers (VCSELs) were fabricated and their mode-stabilized operations investigated. A stable single fundamental transverse mode operation in the microlens-integrated VCSEL was observed. Numerical modal calculations accurately explain the effects of the microlens on mode stabilization.     

Thermal analysis of high-index-contrast grating (HCG)-based VCSEL

A 3-D thermal analysis of 870 nm high-index-contrast grating (HCG)-based vertical cavity surface emitting laser (VCSEL) by using finite volume method (FVM) is presented in this paper. The HCG-based VCSEL is modeled by applying a steady-state 3-D heat dissipation model. Temperature distribution profile and thermal resistance (R_th) of the device are investigated by inserting the heat source value into the thermal simulation. Also, this analysis is performed for a conventional VCSEL operating at the same wavelength and under the same injected current as well as the same geometric sizes. The analysis shows that the maximum temperature inside the HCG-based VCSEL is lower than that inside the conventional VCSEL.     

Effect of oxide aperture on the performance of 850 nm vertical-cavity surface-emitting lasers

An experimental study has been presented of the oxide-confined vertical-cavity surface-emitting lasers (VCSELs) operating in the 850 nm region of the electromagnetic spectrum. In this regard, various relevant VCSEL samples with numerous oxide aperture sizes have been fabricated and characterized. Thorough investigations of the electrical as well as optical characteristics of the fabricated samples have been performed, which include the overall device performance as a function of the oxidize aperture sizes. It is reported that the VCSELs with oxide aperture size <10 μm require low threshold currents (<1 mA). Further, the differential quantum efficiencies up to 28% corresponding to wall-plug efficiencies of up to 15% were measured for a number of these devices.