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利用光散射与导模共振的理论,设计了一种薄膜太阳能电池的陷光结构,对硫属化合物薄膜太阳能电池进行了优化设计,选择多孔氧化铝薄膜(PAA)作为散射层,模型结构层厚度为:窗口层(AZO)320nm,缓冲层(In2S3)65nm,吸收层(SnS)660nm。研究结果表明,光散射与导模共振相结合的薄膜太阳能电池结构能够提高自身的光吸收率,其中由光散射结构提高的全光谱吸收率约为3%。本设计可以优化薄膜太阳能电池的吸收光谱,提高其对近红外波段的光吸收能力,在波长950nm位置的吸收率达到85%,增强了薄膜太阳能电池的光利用率。 相似文献
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Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers 下载免费PDF全文
As an industry accepted storage scheme, hafnium oxide(HfO_x) based resistive random access memory(RRAM)should further improve its thermal stability and data retention for practical applications. We therefore fabricated RRAMs with HfO_x/ZnO double-layer as the storage medium to study their thermal stability as well as data retention. The HfO_x/ZnO double-layer is capable of reversible bipolar switching under ultralow switching current( 3 μA) with a Schottky emission dominant conduction for the high resistance state and a Poole–Frenkel emission governed conduction for the low resistance state. Compared with a drastically increased switching current at 120℃ for the single HfO_x layer RRAM, the HfO_x/ZnO double-layer exhibits excellent thermal stability and maintains neglectful fluctuations in switching current at high temperatures(up to 180℃), which might be attributed to the increased Schottky barrier height to suppress current at high temperatures. Additionally, the HfO_x/ZnO double-layer exhibits 10-year data retention @85℃ that is helpful for the practical applications in RRAMs. 相似文献
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Spin–orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells 下载免费PDF全文
We theoretically study the influence of the spin–orbit coupling(SOC) on the in-plane optical anisotropy(IPOA) induced by in-plane uniaxial strain and interface asymmetry in(001) GaAs/AlGaAs quantum wells(QWs) with different well width. It is found that the SOC has more significant impact on the IPOA for the transition of the first valence subband of heavy hole to the first conduction band(1H1E) than that of 1L1E. The reason has been discussed. The IPOA of(001) InGaAs/InP QWs has been measured by reflectance difference spectroscopy, whose amplitude is about one order larger than that of GaAs/AlGaAs QWs. The anisotropic interface potential parameters of InGaAs/InP QWs are also determined. The influence of the SOC effect on the IPOA of InGaAs/InP QWs when the QWs are under tensile, compressive or zero biaxial strain are also investigated in theory. Our results demonstrate that the SOC has significant effect on the IPOA especially for semiconductor QWs with small well width, and therefore cannot be ignored. 相似文献
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采用水热法,以乙二胺为络合剂合成了Na+离子掺杂的六方相KLaF4∶Er3+/yb3纳米晶.利用X射线衍射谱(XRD)、透射电子显微镜(TEM)、红外光谱(FT-IR)对样品的晶体结构、形貌和表面吸附进行了表征;测量了不同含量Na+掺杂样品在980 nm近红外光激发下的上转换发射光谱和4R/2能级的荧光寿命.结果表明:随着Na+掺杂浓度的增加,KLaF4∶Er3+/yb3+纳米晶上转换红绿光的发光强度均呈现出先增大后减小的趋势,红绿光发射最强强度分别为未掺Na+样品的7.3倍和5.2倍.Na+掺杂使Er3+离子周围晶场的不对称性降低和纳米晶表面吸附基团的减少是发光增强的主要原因.针对Na+掺杂样品的荧光寿命低于未掺样品的原因作了简要讨论. 相似文献
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Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence 下载免费PDF全文
The mode splitting induced by electro-optic birefringence in a P-I-N InGaAs/GaAs/A1GaAs vertical-cavity surface- emitting laser (VCSEL) has been studied by polarized electroluminescence (EL) at room temperature. The polarized EL spectra with E||[110] and E || [150] directions, are extracted for different injected currents. The mode splitting of the two orthogonal polarized modes for a VCSEL device is determined, and its value increases linearly with the increasing injected current due to electro-optic birefringence; This article demonstrates that the polarized EL is a powerful tool to study the mode splitting and polarization anisotropy of a VCSEL device. 相似文献
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Er3+/Yb3+共掺KLaF4纳米晶的制备和上转换发光 总被引:1,自引:1,他引:0
用水热法成功制备了Er3+/Yb3+共掺不同浓度比的KLaF4纳米晶,并在300℃氩气气氛下退火。利用X射线衍射谱(XRD)、透射电子显微镜(TEM)对样品的晶体结构和形貌进行了表征。测量了样品漫反射谱、980 nm激发下的上转换发射光谱和2H11/2能级的荧光寿命。研究结果表明:制备得到的样品为六方相的纳米棒,退火后纳米棒平均直径为28 nm,长为130 nm;在Er3+浓度一定的情况下,提高Yb3+掺杂量有利于增强973 nm附近光的吸收;980 nm的近红外光可上转换为较强的绿光和红光,且红绿光强度和2H11/2能级的平均荧光寿命均会随着Yb3+掺杂浓度的增加而下降。 相似文献
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