Determination of stresses in slightly orthotropic plates using off-axis horizontally polarized ultrasonic shear waves

Many structural materials display a slight orthotropy when they are rolled into plate form. A theory is developed for propagation of horizontally polarized ultrasonic shear waves in the planes of (orthotropic) material symmetry of these plates. The waves propagate at an angle θ to the plate normal. If E represents a measure of the shear stress field, then pure-mode waves can be propagated if both cos² θ and sin² θ E; the polarization directions are the material symmetry axes.

The theory can be applied to ultrasonic stress measurements. The (normalized) velocity difference (acoustic birefringence) between two pure-mode SH-waves propagating in orthogonal material symmetry planes is related to stresses in the plate, and to the (initial) birefringence in the unstressed state. By making measurements of birefringence at two or more values of θ, the dependence upon the initial birefringence can be removed and information about the stresses obtained.     

Vertical cavity surface emitting laser transverse mode and polarization control by elliptical holes photonic crystal

The polarization of traditional photonic crystal (PC) vertical cavity surface emitting laser (VCSEL) is uncontrollable, resulting in the bit error increasing easily. Elliptical hole photonic crystal can control the transverse mode and polarization of VCSEL efficiently. We analyze the far field divergence angle, and birefringence of elliptical hole PC VCSEL. When the ratio of minor axis to major axis b/a=0.7, the PC VCSEL can obtain single mode and polarization. According to the simulation results, we fabricate the device successfully. The output power is 1.7 mW, the far field divergence angle is less than 10°, and the side mode suppression ratio is over 30 dB. The output power in the Y direction is 20 times that in the X direction.     

表面液晶-垂直腔面发射激光器温度特性的研究

本文利用向列相液晶层作为激光偏振调控单元,涂覆于垂直腔面发射激光器（VCSEL）表面,测量并分析了不同温度下VCSEL正交线偏振光的阈值电流、峰值光功率和I-P特性. 实验结果表明：温度为293 K时,涂覆液晶后激光偏振第一跳变点和第二跳变点之间的电流值ΔI增大了2.2 mA,比无液晶时增大1倍. 温度为313 K、注入电流为3 mA时,两种正交线偏振光的光功率差ΔP由133.6 μW增大到248.8 μW,进一步增加了线偏振光的各向异性. 表面液晶层的引入有效地扩大了VCSEL的正交线偏振态稳定范围和光功率差,为实现液晶VCSEL高温单偏振稳定的设计和器件制备提供了理论和实验基础. 关键词： 垂直腔面发射激光器 向列相液晶 偏振态     

Polarization switching characteristics in a 1550nm VCSEL subject to circularly polarized optical injection

Polarization switching(PS) characteristics in a 1550 nm vertical-cavity surface-emitting laser(VCSEL) subject to circularly polarized optical injection(CPOI) are experimentally investigated.The results show that,under different biased current,a solitary 1550 nm VCSEL can oscillate at y polarization mode(y mode),two polarization components(PCs) coexistence or x polarization mode(x mode).The PS characteristics induced by CPOI for the VCSEL operating at y mode and x mode are analyzed and the evolutions of dynamical states with the injected power are discussed.Additionally,the mappings of nonlinear dynamical states are given in the parameters space of the injected power and frequency detuning.     

电光调制对外部光反馈垂直腔表面发射激光器输出矢量混沌偏振的操控

基于周期性极化铌酸锂晶体的线性电光效应耦合波理论,数值研究了电光调制对外部光反馈垂直腔表面发射激光器(VCSEL)输出矢量混沌偏振模的操控.研究结果表明,VCSEL输出的偏振度随着电光晶体的长度或施加于电光晶体的外电场强度成周期性转换,控制一定的施加外电场强度和晶体的长度,激光器的不同参数下引起初始混沌偏振态都可以转换为其他任意混沌偏振态.特别是合理选择一定的施加外电场强度或晶体长度,VCSEL输出的任意混沌偏振模可以转换为完全一致的两线性混沌偏振模(x和ŷ偏振),即两线性混沌偏振模的能量能够达到稳定和完全均衡.     

Locking bandwidth and birefringence effects for polarized optical injection in vertical-cavity surface-emitting lasers

The aim of this paper is to investigate the effects of external optical injection taking account of polarization and electron spin properties in vertical-cavity surface-emitting lasers (VCSELs). Using external polarized injection we seek the locked phases and amplitudes of specific polarized fields in terms of injection level and frequency detuning, taking account of two kinds of distinguishable carrier density (spin-up and spin-down). For the conventional form of optical injection without taking account of spin-polarized fields there are three fundamental equations describing the carrier density, field amplitude and phase. However, by using the spin flip model (SFM), the combined effect of polarized fields along two perpendicular crystal axes and electron spin properties results in six equations. We analyse the conditions for stable locking and also the influence of birefringence effects on the stability map of detuning versus optical injection for both cases of injection polarized parallel and perpendicular to the lasing mode of the solitary VCSEL. For given values of pumping and spin relaxation rate there is a minimum birefringence rate for orthogonal injection. Above this value three regions of elliptical polarization are found in the stability map, namely “quasi-stability” (QS), “coupled limit cycle” (CLC) and “coupled chaos” (CC). The three regions of linear polarization, namely chaos, limit cycle and stability, are reduced in area compared to the case of parallel injection. For orthogonal injection it is found that increased birefringence or reduced spin relaxation rate causes the stable locking region to begin at higher injected power and frequency detuning.     

m面蓝宝石上外延（110）取向立方MgZnO薄膜及其日盲紫外探测器件研究

由于在日盲紫外探测方面的应用前景,具有合适带隙的MgZnO合金半导体薄膜受到越来越多的关注。获得具有择优取向的单一相MgZnO对提升MgZnO基日盲紫外探测器性能至关重要。本文利用低压金属有机化学气相沉积（LP-MOCVD）方法在m面蓝宝石衬底上制备了一系列不同组分的Mg_xZn_1-xO薄膜。光学和结构特性测试结果表明：Zn摩尔分数达到55%的Mg_0.45Zn_0.55O薄膜依然是单一立方相,其光学带隙可以达到4.7 eV。立方岩盐结构MgZnO与m面蓝宝石衬底的外延结构关系为（110）_MgZnO‖（1010）_sapphire、[001]_MgZnO‖[1210]_sapphire和[110]_MgZnO‖[0001]_sapphire。唯一确定的面内取向有利于薄膜晶体质量的提高。基于（110）取向立方相Mg_0.45Zn_0.55O薄膜制备金属-半导体-金属（MSM）结构器件,获得了光响应峰在260 nm、光响应截止波长278 nm的日盲紫外探测器。     

Al纳米线不同晶向力学行为和变形机制的模拟

采用分子动力学模拟计算方法,考察具有较高层错能的Al纳米线沿不同晶向的力学行为和变形机制。在相同计算条件下与具有较低层错能的Ni、Cu、Au和Ag等FCC金属纳米线进行比较。结果表明：在力学行为方面,Al纳米线的弹性模量呈现明显的结构各向异性,满足E_[111] > E_[110] > E_[100]的关系,这一关系在FCC金属纳米线中普遍成立;Al纳米线的屈服应力随晶向呈现σ_y[100] > σ_y[111] > σ_y[110]的关系,这一关系在具有较低层错能的FCC金属纳米线中不具有普遍性,这与体系中位错形成机制密切相关。根据拉伸变形过程微观结构的演变规律,阐明Al纳米线不同晶向的变形机制,并与具有较低层错能的Ni、Cu、Au和Ag等FCC金属纳米线的变形机制进行比较。结果表明,对于尺度较小的高层错能Al纳米线,Schmid因子和广义层错能均难以准确预测其变形机制。     

Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

An experimental study of leakage current is presented in a semi-insulating(SI) Ga As photoconductive semiconductor switch(PCSS) with voltages up to 5.8 kV(average field is 19.3 kV/cm). The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10~(-9)A to 3.6×10~(-5)A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n(E) characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J(E), further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.     

Graduation of electron spectrometer intensity scale. Part 2. How to do it

Graduation function G(E′) absolute values have been determined experimentally for the first time for the intensity scale of an ordinary Auger electron spectrometer. The determination of G(E′) includes creation of an original standard signal and measurement of the consequent reaction of the spectrometer using a “giant rectangular modulation” operation mode, integration of the measurand, and use of an original G(E′) definition. The experimental values of G(E′) are presented in the correct dimensional units for a pass energy range E′ = 150–1000 eV. A non-monotonous behaviour of G(E′), a strong dependence of G(E′) on the multiplier entrance bias voltage, and a discrepancy between the graduation functions of spectrometers of the same type with CMA are demonstrated. Possibilities are predicted for a similar G(E′) determination for other types of spectromer.     

基于咔唑-三嗪并吲哚的N-酰腙衍生物的NMR数据归属

N-酰腙类化合物在极性溶剂中存在着E/cis和E/trans两种异构体，本文利用元素分析、红外光谱、1D和2D核磁共振（NMR）波谱（包括¹H NMR、¹³C NMR、¹H-¹H COSY、¹H-¹³C HSQC、¹H-¹³C HMBC和NOESY）等技术，对基于咔唑-三嗪并吲哚的新型N-酰腙衍生物3，即2-（5H-[1，2，4]三嗪[5，6-b]吲哚-3-硫基）-N'-（9-乙基咔唑-3-亚甲基）乙酰肼的两种异构体（E/cis和E/trans）的¹H和¹³C NMR信号进行了全归属，测量了其偶合常数（J值）及两种异构体的含量，确定了其空间结构.     

New observations on hydrogen bonding in ice by density functional theory simulations

In this paper, we report on a series of computational simulations on hydrogen bonding in two ice phases （Ih and Ic） using CASTEP with PW91 and RPBE exchange-correlation based on ab initio density functional theory. The strength of the H-bond is correlated with intramolecular O-H stretching, and the energy splitting exists for both the H-bond and covalent O-H stretching. By analyzing the dispersion relationship of to（q）, we observe the separation of the longitudinal optic （LO） mode from transverse optic （TO） mode at the gamma point, seemingly interpreting the controversial two H-bond peaks in the vibrational spectrum of ice recorded by inelastic incoherent neutron scattering experiments. The test of ambient environment on phonon density of sates （PDOS） shows that the relaxed tetrahedral structure is the most stable structural configuration for water clusters.     

Determination and analysis of the dispersive optical constants of the 5,5′,6,6′-tetraphenyl-2,2′-bi([1,3]dithiolo[4,5-b][1,4]dithiinylidene)–DDQ complex thin film

The synthesis and optical properties of the 5,5′,6,6′-tetraphenyl-2,2′-bi([1,3]dithiolo [4,5-b] [1,4]dithiinylidene)–2,3-dichloro-5,6-dicyano-p-benzoquinone (DDQ) complex thin film were investigated by the optical characterization. The optical constants such as refractive index, extinction coefficient and absorption coefficient were determined using the transmittance T(λ) and reflectance R(λ) spectra and the refractive index dispersion was analyzed using single oscillator of Wemple–Didomenico model. The single oscillator energy E₀ and the dispersion energy E_d were calculated. The effect of temperature on refractive dispersion and optical band gap E_g is also discussed. As a result, the annealing temperatures have an important effect on refractive index of thin film.     

晶体NiF2的吸收光谱和电子顺磁共振谱的一种完全对角化计算

采用半自洽场(semi-SCF)自由Ni²⁺的d轨道波函数、点电荷-偶极子模型和Ni²⁺-6X^-(X=F,Cl,Br,I)络合物的μ-κ-α模型,建立结构参数与光谱、电子顺磁共振(EPR)谱(零场分裂D,E和顺磁g因子)之间的定量关系.利用能量矩阵完全对角化方法(CDP)和高阶微扰方法,统一解释NiF₂晶体的局部结构、吸收光谱和电子顺磁共振谱(EPR).比较两种方法计算得到的零场分裂D,E和顺磁g因子.结果表明:①高阶微扰方法算出的D,E值误差大;②能量矩阵完全对角化方法(CDP)算出的D,E值、光谱、顺磁g因子的值都与实验符合很好.     

Index of refraction, optical activity and electro-optic coefficient of bismuth titanium oxide (Bi12TiO20)

12 TiO₂₀. The first two can be measured by simple and classical methods, but the coexistence of optical activity, electrogyration, field-induced linear birefringence, and piezoelectric and photoelastic effects in photorefractive materials such as Bi₁₂TiO₂₀ complicate the measurement of the electro-optic coefficient. For normal incidence of linearly polarized light we derive analytic expressions for the polarization of light that has passed through the crystal. The ellipticity of the polarization is a function of the electric-field-induced linear birefringence and hence of the electro-optic coefficient of the crystal. Therefore measurement of the ellipticity as a function of an electric field externally applied to the crystal leads to an electro-optic coefficient r₄₁ of 5.3±0.1 pm/V. Received: 22 December 1996/Revised version: 21 March 1997     

Influence of the electric characteristics of II–VI semiconductor material on the electroluminescence of lanthanide complex

The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered optimization scheme. II–VI semiconductor material ZnS is acted as an electron function (transporting and acceleration) layer. The hot electrons which have been accelerated in the ZnS layer directly impact excitation europium ions through resonant energy transfer and then recombine with injected holes to form excitons in PVK or EuTTA₂(N-HPA)Phen. Europium (Eu) ions may also be excited by intramolecular energy transfer from ligands. There are two kinds of excitation mechanisms: impacted excitation and injected recombination for the combined structural device. The electroluminescence (EL) intensity of the combined structural device is strongly improved and reaches up to 381 cd/m² at 20 V compared with the pure organic structural device. It may be an effective method to improve the EL intensity of the lanthanide complex by using electric characteristics of inorganic semiconductor materials.     

Comprehensive uniformity analysis of GaAs-based VCSEL epiwafer by utilizing the on-wafer test capability

A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry–Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light–current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.     

894nm高温垂直腔面发射激光器及其芯片级铯原子钟系统的应用

报道了自行研制的894 nm高温垂直腔面发射激光器(VCSEL)以及基于此类器件的芯片级铯原子钟系统的应用实验结果.根据芯片级铯原子钟对VCSEL在特定高温环境下产生894.6 nm线偏振激光的要求,对器件的量子阱增益及腔模位置等材料结构参数进行了优化,确定增益-腔模失谐量为-15 nm,使器件的基本性能在高温环境下保持稳定.研制的VCSEL器件指标为:20—90?C温度范围内阈值电流保持在0.20—0.23 m A,0.5 m A工作电流下输出功率0.1 mW;85.6?C温度环境下激光波长894.6 nm,偏振选择比59.8:1;采用所研制的VCSEL与铯原子作用,获得了芯片级铯原子钟实施激光频率稳频的吸收谱线和实施微波频率稳频的相干布居囚禁谱线.     

Effect on polarization control in 850 nm vertical cavity surface emitting laser fabricated by H ion inclined implantation using tungsten wire as mask

Polarization character measurements on VCSEL devices, fabricated by ion inclined implantation with various parameters using tungsten wire as mask, were performed. The effect of polarization mode control was observed in these devices with square injected current aperture formed by distributed ion during implantation. Moreover, the effect depended on the size of the square injected current aperture. The device with highest polarization mode suppression ratio (PMSR) up to 14 dB was obtained, which kept the operation of linear polarization state at 3.4I_th injected current. The further optimization to obtain the better polarization control effect is available. What the most valuable is that the mechanism of polarization control effect is completely self-formed during device processing. Furthermore, this method is the simplest technique to apply in industry, as much as we know.     

Polarization anisotropy in vertical-cavity semiconductor optical amplifiers

The polarization-dependent gain (PDG) characteristics of a vertical-cavity semiconductor optical amplifier (VCSOA) are measured, and the case of the PDG is determined. It is often assumed that the polarization states of a VCSOA are degenerate because of the circular geometry of the device. This assumption is not true in practice, and it is found that VCSOAs possess a dominant linear polarization state and a small difference in frequency between polarization states. The difference in resonant frequencies causes the PDG of the VCSOA. Measurements of the polarization state show that the cause of the splitting is electro-optic birefringence.