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1.55-μm Si-based MOEMS optical tunable filter
引用本文:左玉华,黄昌俊,成步文,蔡晓,毛容伟,李传波,罗丽萍,高俊华,白云霞,姜磊,马朝华,朱家廉,王良臣,余金中,王启明.1.55-μm Si-based MOEMS optical tunable filter[J].Chinese Optics Letters,2003,1(9).
作者姓名:左玉华  黄昌俊  成步文  蔡晓  毛容伟  李传波  罗丽萍  高俊华  白云霞  姜磊  马朝华  朱家廉  王良臣  余金中  王启明
作者单位:State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Joint Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083
基金项目:The project was supported by the Major state Basic Research(973) Program of China(No.G2000036603),the National Natural Science Foundation of China(No.96104003)and 863 Plan of China(No. 2002AA312010),
摘    要:A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.


1.55-μm Si-based MOEMS optical tunable filter
Abstract:A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.
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