Properties of single and multiple defect modes in one-dimensional photonic crystals containing left-handed metamaterials

Wave propagation is studied in structures consisting of alternate left- and right-handed layers.Bragg gap and zero-n gap appear in different frequency regions of the structure.The periodicity of the structure is broken by simply reversing the order of the layers in one half of the structure,resulting in defect modes located inside the zero-n gap and Bragg gap.These modes can be made very narrow by adding more layers in the structure.The defect mode located inside the zero-n gap is sensitive to the symmetry of the structure and insensitive to the angle of incidence of the incoming radiation.Multiple modes are also generated inside the gaps by repeating the structural pattern.Thus,a simple structure can be used for single and multiple modes that are important for different applications.     

First-principles investigation of the electronic structure and magnetism of eskolaite

The electronic structure and magnetism of eskolaite are studied by using first-principles calculations where the on-site Coulomb interaction and the exchange interaction are taken into account and the LSDA+U method is used. The calculated energies of magnetic configurations are very well fitted by the Heisenberg Hamiltonian with interactions in five neighbour shells; interaction with two nearest neighbours is found to be dominant. The Néel temperature is calculated in the spin-3/2 pair-cluster approximation. It is found that the measurements are in good agreement with the calculations of lattice parameters, density of states, band gap, local magnetic moment, and the Néel temperature for the values of U and J that are close to those obtained within the constrained occupation method. The band gap is of the Mott--Hubbard type.     

Transmission properties of one-dimensional photonic crystals containing double-negative and single-negative materials

The transmission properties of one-dimensional photonic crystals containing double-negative and single- negative materials are studied theoretically.A special kind of photonic band gap is found in this structure. This gap is invariant with scaling and insensitive to thickness fluctuation.But when changing the ratio of the thickness of two media,the width of the gap could be enlarged.The defect modes are analyzed by inducing a linear defect layer in the structure.It is found that the number of defect modes will increase when the thickness of the defect layer becomes larger.     

Uniaxial stress influence on lattice, band gap and optical properties of n-type ZnO： first-principles calculations

The lattice,the band gap and the optical properties of n-type ZnO under uniaxial stress are investigated by firstprinciples calculations.The results show that the lattice constants change linearly with stress.Band gaps are broadened linearly as the uniaxial compressive stress increases.The change of band gap for n-type ZnO comes mainly from the contribution of stress in the c-axis direction,and the reason for band gap of n-type ZnO changing with stress is also explained.The calculated results of optical properties reveal that the imaginary part of the dielectric function decreases with the increase of uniaxial compressive stress at low energy.However,when the energy is higher than 4.0 eV,the imaginary part of the dielectric function increases with the increase of stress and a blueshift appears.There are two peaks in the absorption spectrum in an energy range of 4.0-13.0 eV.The stress coefficient of the band gap of n-type ZnO is larger than that of pure ZnO,which supplies the theoretical reference value for the modulation of the band gap of doped ZnO.     

Static dipole polarizabilities of Scn （n ≤15） clusters

The static dipole polarizabilities of scandium clusters with up to 15 atoms are determined by using the numerically finite field method in the framework of density functional theory. The electronic effects on the polarizabilities are investigated for the scandium clusters. We examine a large highest occupied molecular orbital --- the lowest occupied molecular orbital (HOMO--LUMO) gap of a scandium cluster usually corresponds to a large dipole moment. The static polarizability per atom decreases slowly and exhibits local minimum with increasing cluster size. The polarizability anisotropy and the ratio of mean static polarizability to the HOMO--LUMO gap can also reflect the cluster stability. The polarizability of the scandium cluster is partially related to the HOMO--LUMO gap and is also dependent on geometrical characteristics. A strong correlation between the polarizability and ionization energy is observed.     

Crystal thickness and sphere dispersion dependence of the photonic band gap of silica colloidal crystals

Experimental results demonstrate that the band gap of colloidal suspension crystal changes with both the thickness of crystal and the dispersity of micro-spheres. As the thickness decreases, a red shift of band gap is observed, and there is a maximum of red shift. The values of the maximum red shifts are dependent on the standard deviations of micro-spheres. The experimental results are consistent with theoretical calculation. As the colloidal suspension crystal is assembled from micro-spheres with a standard deviation of 8.4% in a thick cell, an incident angles independent broadband is observed, which is explained as an amorphous structure. Two amorphous models are discussed.     

Optical characteristic and gap states distribution of amorphous SnO2:（Zn,In） film

In this paper the fabrication technique of amorphous SnO 2:(Zn,In) film is presented.The transmittance and gap-states distribution of the film are given.The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory.The distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.     

The spontaneous emission of an excited atom embedded in photonic crystals with two atomic position-dependent bands

The spontaneous emission of an excited atom embedded in photonic crystals with two atomic position-dependent bands is investigated.The distribution of the density of states between two bands depends on the atomic position in a unit cell of the photonic crystal and is described with an atomic position-dependent parameter.The result shows that the emitted field and the time evolution of the upper-level population are affected by the atomic position and the gap width.The spontaneous emission spectrum in free space can be shifted and narrowed with the photonic reservoir and the gap width.     

Determination of Thickness and Optical Constants of ZnO Thin Films Prepared by Filtered Cathode Vacuum Arc Deposition

ZnO thin films are prepared on glass substrates by filtered cathode vacuum arc （FCVA） deposition technique. A new method is demonstrated to extract the refractive index, thickness and optical band gap of ZnO thin films from the transmission spectrum alone. The refractive index is calculated from the extremes of the interference fingers. The transmission spectrum is divided into two terms, non-interference term and interference effect term. The thickness of thin films is calculated by simulating the interference term, and the non-interference term is used to calculate optical band gap with the gained thickness. The results are compared with measurements by using an ellipsometry and a scanning electron microscope.     

Dielectrophoretic assembly of ZnO nanowires

The synthesis of zinc oxide （ZnO） nanowires is achieved by vapor phase transportation （VPT） method. The designed quartz tube, whose both ends are narrow and the middle is wider, is used to control the growth of ZnO nanowires. Dielectrophoresis （DEP） method is employed to align and manipulate ZnO nanowires which are ultrasonic dispersed and suspended in ethanol solution. Under the dielectrophoretic force, the nanowires are trapped on the pre-patterned electrodes, and further aligned along the electric field and bridge the electrode gap. The dependence of the alignment yield on the applied voltage and frequency is investigated.     

Shallow Donor Impurity Ground State in a GaAs/AlAs Spherical Quantum Dot within an Electric Field

Using the configuration-integration methods （CI） [Phys. Rev. B 45 （1992） 19], we report the results of the Hydrogenie-impurity ground state in a GaAs/AIAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity ground state as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F. We find that the ground energy and binding energy of impurity placed anywhere depend strongly on the position of impurity. Also, electric field can largely change the Hydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy level and binding energy are observed from the center donor and off-center donor.     

Partial-SOI high voltage laterally double-diffused MOS with a partially buried n~+-layer

A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n＋-layer, which is partially buried on the bottom interface of the top silicon layer （PBNL PSOI LDMOS）. The undepleted interface n＋-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage （BV）. With the same thickness values of the top silicon layer （10 p.m） and buried oxide layer （0.375 μm）, the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%.     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.     

Theoretical Study on Drift of Ca^2＋ Spiral Waves Controlled by Electric Field

Based on the Tang-Othmer Ca^2＋ model, the drift behavior of intracellular Ca^2＋ spiral waves under the influence of weak electric field is investigated. Numerical results show that the dependence of drift velocity of the spiral tip on dc electric field is similar to experimental observations in BZ system. When an ac electric field is applied, interesting resonant-drift phenomenon is observed with ω=2ω0. All results can be explained analytically using a proximate method.     

Study of typical space wave–particle coupling events possibly related with seismic activity

Based on the DEMETER satellite, we found two space wave-particle coupling events during February 2010 that took place in the range of the McIlwain parameter L （1.27-- 1.37）. There are strong spatial and temporal correlation between the particle bursts （PBs） and the electromagnetic disturbances of the coupling events. The two PBs show different energy spectrum characteristics, while the corresponding electromagnetic disturbances concentrated on different frequency ranges. In agreement with the prediction of the theory of wave-particle interaction, we conclude that the two wave-particle inter- actions can be probably explained as follows： one is electron-dominant precipitation with energy of 0.09 MeV,-~0.2 MeV induced by a VLF electromagnetic wave with the frequencies of 14 kHz,-20 kHz, and another is proton-dominant precip- itation with energies of 0.65 MeV--2.85 MeV induced by a VLF electromagnetic wave with the frequency of ≤ 100 Hz. For the first time, these particle bursts＇ origins, from electrons or protons detected by the Instrument for the Detection of Particles （IDP） on board, are inferred by theoretical calculation, although the instrument has no ability to identify the particle species.     

Magnetic and electric properties of transition-metal doped wurtzite CdSe from first-principles calculation

s The geometrical structures of Cd0.75TM0.25Se （TM = Ti, V, Cr and Mn） are optimized, and then their electric and magnetic properties are investigated by performing first-principles calculations within the generalized gradient approximation for the exchange-correlation function based on density functional theory. Cd0.75TM0.25Se （TM =Ti and V） are found to have high spin-polarization near 100% at the Fermi level. Cd0.75TM0.25Se （TM = Cr and Mn） are half-metallic ferromagnets whose spin-polarization at the Fermi level is absolutely ＋100%. The supercell magnetic moments of Cd0.75Cr0.25Se and Cdo.75Mno.25Se are 4.00 and 5.00 μB, which arise mainly from Cr-ions and Mnions, respectively. The half-metallicity of Cdo.75Cro.25Se is more stable than that of Cd0.75Mn0.25Se. The electronic structures of Cr-ions and Mn-ions are Cr eg2↑t22g↑ and Mn e2 3 ↑t23g↑, respectively.     

Enormous enhancement of electric field in active gold nanoshells

The electric field enhancement properties of an active gold nanoshell with gain material inside have been investigated by using Mie theory. As the gain coefficient of the inner core increases to a critical value, a super-resonance appears in the active gold nanoshell, and enormous enhancements of the electric fields can be found near the surface of the particle. With increasing shell thickness, the critical value of the gain coefficient for the super-resonance of the active gold nanoshell first decreases and then increases, and the corresponding surface enhanced Raman scattering （SERS） enhancement factor （G factor） also first increases and then decreases. The optimized active gold nanoshell can be obtained with an extremely high SERS G factor of the order of 1019-1020. Such an optimized active gold nanoshell possesses a high-efficiency SERS effect and may be useful for single-molecule detection.     

Electric field distribution around the chain of composite nanoDarticles in ferrofluids

Composite nanoparticles （NPs） have the ability of combining materials with different properties together, thus receiving extensive attention in many fields. Here we theoretically investigate the electric field distribution around core/shell NPs （a type of composite NPs） in ferrofluids under the influence of an external magnetic field. The NPs are made of cobalt （ferromagnetic） coated with gold （metallic）. Under the influence of the external magnetic field, these NPs will align along the direction of this field, thus forming a chain of NPs. According to Laplace＇s equations, we obtain electric fields inside and outside the NPs as a function of the incident wavelength by taking into account the mutual interaction between the polarized NPs. Our calculation results show that the electric field distribution is closely related to the resonant incident wavelength, the metallic shell thickness, and the inter-particle distance. These analytical calculations agree well with our numerical simulation results. This kind of field-induced anisotropic soft-matter systems offers the possibility of obtaining an enhanced Raman scattering substrate due to enhanced electric fields.     

Lattice results on nucleon/roper properties

In this proceeding, I review the attempts to calculate the Nucleon resonance （including Roper as first radially excited state of nucleon and other excited states） using lattice quantum chromodynamics （QCD）. The latest preliminary results from Hadron Spectrum Collaboration （HSC） with mπ≈ 380 MeV are reported. The Sachs electric form factor of the proton and neutron and their transition with the Roper at large Q2 are also updated in this work.