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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor |
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| Authors: | Mao Wei ;She Wei-Bo ;Yang Cui ;Zhang Chao ;Zhang Jin-Cheng ;Ma Xiao-Hua ;Zhang Jin-Feng ;Liu Hong-Xia ;Yang Lin-An ;Zhang Kai ;Zhao Sheng-Lei ;Chen Yong-He ;Zheng Xue-Feng ;Hao Yue |
| Abstract: | analytical model of GaN-based field-plated HEMT, polarization effect, potential, electric field |
| Keywords: | analytical model of GaN-based field-plated HEMT polarization effect potential electric field |
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