合肥储存环二期改造工程的调试

合肥光源二期工程改造后, 对电子储存环光学参数进行了全面的调试和测量, 新注入系统和高频系统的调试, 也获得了巨大的成功, 在插入八极铁和过正地补偿色品后, 耦合束团不稳定性的得到了有效地抑制, 从而使改造后电子储存环能积累和运行在300mA以上的流强.     

伽利略望远镜与柱面镜组合式长焦综合测量系统

为了实现定距离、较大视场范围某低速点的快速方位角及高程测量要求,采用点型光源、伽利略望远镜与柱面镜组合式长焦光学系统及双正交线阵CCD,搭建了一种复合柱面镜长焦光学测量系统.该组合式长焦光学系统无一次成像面,系统光学长度短,系统前组为伽利略型望远镜型式,接近无焦.在一定测量范围内,选择合适的前组角放大倍率和前组口径等参量,使得在不同位置的点所成线像均与双线阵CCD正交.有针对性地优化光学系统设计、选择合适的系统评价函数并对系统装调及测量原理进行准确度分析.结果表明,该系统在测量距离为10m,视场范围1.5°×1.5°内时,方位角测量误差在±2.5″以内,且系统长度较短,公差较宽松.该系统解决了光源合作目标尺寸严格受限的问题,探测器尺寸较大且成本较低.     

合肥光源DCCT系统的磁屏蔽

 分析和测试了合肥光源杂散场对直流流强检测器系统的影响。给出了合肥光源DCCT系统的磁屏蔽的计算、设计和测量结果。屏蔽后,由杂散场引起的DCCT零漂由1mA降至10μA以下。     

上海光源数字化低电平控制系统的硬件设计与实现

 设计了上海光源高频低电平控制系统,它是以数字化技术为基础,采用上下变频和IQ调制解调技术,实现幅度、频率和相位的反馈控制。上海光源储存环的束流设计流强为300 mA,为了抑制由此带来的Robinson不稳定性和纵向零模束流振荡,加入了高频直接反馈和零模束流反馈环路。从上下变频技术、IQ调制解调技术、时钟分配及锁相技术等方面对上海光源数字化低电平系统的硬件设计及其实现进行了阐述,给出了该系统试验、高功率下运行的测试结果,实现了设计要求的幅度控制精度±1%、频率控制精度 ±10 Hz和相位控制精度± 1°的技术指标。     

合肥电子储存环束流不稳定性的抑制

 合肥光源二期工程改造的电子储存环调试过程中，发现多束团存储和运行时存在耦合束团不稳定性，严重地限制了注入的最高流强，并且影响了光源运行的质量。通过过正地增大正色品以及在储存环上插入八极磁铁，基本上抑制了横向的耦合束团不稳定性，保证了稳定注入束流300 mA的技术指标。     

合肥光源新的直流流强检测系统的研制

介绍了合肥光源新的直流流强检测系统的组成,包括PCT系统(PCT探头和电子学线路)、DCCT真空室及其屏蔽系统以及DCCT数据获取系统.屏蔽系统可以将由杂散场影响所产生的DCCT零漂从1mA降至10μA以下.最后,给出了DCCT数据获取系统的软硬件设计.新的DCCT系统的分辨率为1μArms,精度可达0.1%.     

合肥光源储存环温度监测系统

温度是影响电子束轨道稳定的重要因素之一,大多数加速器都需要为其建立完备的冷却恒温系统及相应的监测系统.描述了合肥光源基于EPICS(Experimental Physics and Industrial ControlSystem)分布式控制系统开发的温度监测系统的硬件结构、软件设计、测试结果及其历史数据库.经实际运行表明,该系统能很好满足与温度相关的机器研究和运行的需要.     

深紫外光刻照明系统的微反射镜阵列公差分析

为满足45 nm及其以下节点光刻技术对照明系统的需求,将深紫外光刻照明系统的光束整形单元所采用的微反射镜阵列(MMA)作为关键器件,以实现满足光源-掩模联合优化(SMO)技术需求的任意照明光源。根据MMA结构参数和加工制造调整特性,分析MMA角度误差类型。在此基础上,利用蒙特卡罗公差分析法模拟实际加工制造调整的过程,通过分析微反射镜角度误差对曝光结果的影响,制定了满足曝光要求的角度公差。结果显示,当MMA在正交方向上的角度调整公差和加工角度公差分别在(±0.04°,±0.06°)、(±0.04°,±0.04°)范围内时,系统曝光得到的特征尺寸误差(CDE)在98.1%的置信概率下小于0.33 nm。     

用于实时溅射深度测量的新型Grimm辉光放电光源的设计

采用辉光放电光谱仪进行物质表面深度分析时,样品溅射深度是重要的分析信息.本文设计了一种新型Grimm辉光放电光源,此光源与激光位移测距传感器构成的测昔系统可对样品溅射深度进行实时测量,并保证了良好的辉光溅射效果和分辨多层结构及界面的能力.采用激光三角测量技术,在辉光光谱分析的同时对溅射深度进行实时测量,能够有效地解决传统深度分析方法中步骤繁琐以及对深度估算不准确等问题.本光源采用光纤将辉光光谱信号从光源传至多道分光光电检测系统,在结构上首次实现了元素光谱信号和溅射深度信号的实时采集及基于时间的同步分析,对标准样品得到了理想的实时溅射深度测量曲线.本文详细介绍了此新型辉光放电光源的设计思路和工作原理.本辉光放电光源具有良好的深度分辨率,在30 mA,900 V,20 min的溅射条件下,对铁基和铜基样品的溅射速率分别约为10和55 nm·s-1,文中给出了样品的溅射坑表面形貌图和溅射坑显微照片.对中低合金钢标准样品进行了分析精密度实验,分析精度良好,其中C,Cu,Al,Ni,Mo,Mn,V元素相对标准偏差(RSD)均小于1.7%.Cr和Si元素RSD小于2.6%,给出了实测数据.     

上海光源储存环工作点测量系统

报道了工作点测量技术的研究现状,对束流频谱分析用于工作点测量的方法进行了详细说明。介绍了上海光源储存环工作点测量系统的物理需求、方案设计、硬件结构及关键设备选型。采用束流实验的方法对系统配置参数进行优化,对系统测量误差及分辨力进行测试评估,讨论了测量系统不同工作模式的优缺点,并给出加速器不同运行阶段应该采用的运行模式。优化后的上海光源工作点测量系统,其系统测量误差小于0.000 1,测量分辨力好于0.000 05,测量过程对束流轨道及等效束斑尺寸的扰动控制在μm量级,现已在上海光源运行及机器研究中投入实用。     

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm². The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.     

HLS bunch current measurement system

Bunch current is an important parameter for studying the injection fill-pattern in the storage ring and the instability threshold of the bunch, and the bunch current monitor also is an indispensable tool for the top-up injection. A bunch current measurement (BCM) system has been developed to meet the needs of the upgrade project of Hefei Light Source (HLS). This paper presents the layout of the BCM system. The system based on a high-speed digital oscilloscope can be used to measure the bunch current and synchronous phase shift. To obtain the absolute value of bunch-by-bunch current, the calibration coefficient is measured and analyzed. Error analysis shows that the RMS of bunch current is less than 0.01 mA when bunch current is about 5 mA, which can meet project requirement.

     

Progress of the Injector Linac Upgrade for the BEPCⅡ Project

BEPCⅡ—an upgrade project of Beijing Electron Positron Collider (BEPC) is a factory type of e+e- collider. It requires its injector linac to have a higher beam energy (1.89 GeV) for on-energy injection and a higher beam current (40 mA e+ beam) for a higher injection rate ( 50 mA/min). The low beam emittance (1.6π mm·mrad for e+ beam, and 0.2πmm·mrad for 300 mA e- beam) and the low beam energy spread (±0.5%) are also required to meet the storage ring acceptance. Thus the original BEPC injector linac must be upgraded to have a new electron gun with its complete tuning system, a new positron source with a flux concentrator, a new RF power system with its phasing loops and a new beam tuning system with orbit correction and optics tuning devices. These new components have been designed, fabricated, tested and will be installed in their final positions in this spring and summer, which are described in this paper.     

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer

In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.     

注入电流对绿光高压LED光电特性的影响

设计并制备了12 V 的GaN基绿光高压发光二极管（LED）,并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明：电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。     

Directional emission InP/GaInAsP square-resonator microlasers

InP/GaInAsP square-resonator microlasers with an output waveguide connected to the midpoint of one side of the square are fabricated by standard photolithography and inductively-coupled-plasma etching technique. For a 20-mum-side square microlaser with a 2-mum-wide output waveguide, cw threshold current is 11 mA at room temperature, and the highest mode Q factor is 1.0x10(4) measured from the mode linewidth at the injection current of 10 mA. Multimode oscillation is observed with the lasing mode wavelength 1546 nm and the side-mode suppression ratio of 20 dB at the injection current of 15 mA.     

质子轰击条形结构InGaAsP/InP内调Q DH双稳态激光器

本文报道一种质子轰击条形结构内调Q InGaAsP/InP DH双稳态激光器(简称BSDH)。该激光器具有典型的光输出双稳态特性,实验测得两个典型样品的双稳态工作区电流跨度△I分别为50mA,200mA,它随器件结构参数的选取而异,值得指出的是在不同注入电流下观察到高态激光输出呈单纵模稳频特性,峰值波长λ₀=1.2596μm,频率(波长)稳定度优于10^-5,本文对上述现象从物理上进行了定性的讨论。 关键词：     

A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.     

纳米折叠InGaN/GaN LED材料生长及器件特性

在以自组织Ni纳米岛为掩膜制作的n-GaN纳米柱上,利用MOCVD方法外延生长了具有折叠InGaN/GaN多量子阱(MQW)的LED结构外延片,进而制作了LED器件.外延片上中下游的光致荧光测试,结果表明外延片具有很好的均匀性.用该外延片制作的LED的电致发光谱,随注入电流增加没有明显蓝移,这表明纳米结构能更好地释放应力,纳米柱上外延生长的多量子阱,具有较低的压电极化电场.正向工作电流20 mA时,LED器件的工作电压为4.6 V. 关键词： 纳米柱LED 光致发光 电致发光