785nm便携式光栅外腔可调谐半导体激光器的研制和输出特性

针对移频激发拉曼光谱测试系统的小型化需求,在Littrow结构中,采用商用的785nm大功率激光二极管作为增益器件,构建了一款便携式光栅外腔可调谐半导体激光器。该激光器通过采用一种新型的波长调谐方法,即以改变半导体增益器件相对于准直透镜的水平位置来实现波长的连续调谐,实现了尺寸为140mm×65mm×50mm的小型化结构设计。相比于传统的旋转衍射光栅改变光线在光栅上的入射角来实现波长调谐的方式,该方法有效地缩减了增益器件的平移距离,从而有利于便携式外腔激光器波长的快速宽带调谐。实验结果表明,该激光器具有较宽的波长调谐范围,在340~900mA注入电流下均可实现10nm以上的波长调谐,尤其在900mA大注入电流下,其波长调谐覆盖779.40~791.07nm,调谐范围可达11.67nm,且激射线宽小于0.2nm,单波长输出功率最高可达280mW,放大的自发辐射抑制比大于25dB,呈现出较优异的输出性能,满足移频激发拉曼光谱检测系统对光源的基本要求。此外,该激光器可采用一微型压电陶瓷驱动器来实现波长的电动调谐,实验获得了1.35nm的波长调谐范围,证实了所制785nm便携式光栅外腔可调谐半导体激光器适合作为便携式移频激发拉曼光谱检测系统的光源用于减除原始拉曼光谱中的荧光背景。     

External cavity quantum dot tunable laser through 1.55 μm

The optical performance of InAs/InGaAsP quantum dot (QD) lasers grown on (1 0 0) InP was studied for three different material structures. The most efficient QD laser structure, having a threshold current of 107 mA and an external differential quantum efficiency of 9.4% at room temperature, was used to form the active region of a grating-coupled external cavity tunable laser. A tuning range of 110 nm was demonstrated, which was mainly limited by the mirror and internal losses of the uncoated laser diode. Rapid state-filling of the QDs was also demonstrated by observing the evolution of the spectra with increasing injected current.     

Single polarization, single transverse mode, and widely tunable narrow-linewidth laser from a multimode vertical cavity surface-emitting laser by use of a coupled cavity

A simple method for achieving a widely tunable narrow-linewidth, single polarization state and single transverse mode lasing oscillation from a commercially available multimode vertical cavity surface-emitting laser by use of a coupled cavity is reported. The laser has a wavelength tuning range of more than 5 nm along 850 nm, a side-mode suppression ratio of approximately 15 dB, and an output power of approximately 0.3 mW from a 50-microm multimode optical fiber at a bias current of 15 mA. The laser was operated in a single state of polarization lasing oscillation without any polarization switching.     

Spectrum Improvement of a High-Power Broad-Area Laser Diode Based on a Grating Semi-Feedback External Cavity Scheme

We propose a grating semi-feedback external cavity (GSFEC) scheme for high-power broad-area laser diodes for improving the spectrum characteristics of high-power semiconductor lasers. We design this scheme as two crossed cylindrical resonators employing a holographic diffraction grating and a rectangular highly reflecting mirror. In our experiments, we obtain stable spectrum characteristics over a tuning range of 5 nm, with maximum output power up to 764 mW at an operating current of 3.5 A. The wavelength drift rate with injection current decreases from 0.59 nm/A of free-running condition to 0.2 nm/A, and the laser bandwidth is compressed to 21.5% at 2 A.     

单片集成微环反射器可调谐半导体环形激光器理论和数值模型(英)

设计了一种新颖的快速可调谐激光器。这种激光器在恒定电流泵浦的有源微环组成的半导体环形激光器腔外部集成一个可调谐的无源微环反射器,其结构将决定激光器激射腔模的有源腔和无源可调谐部分分离,有助于提高调谐速度。与光栅结构的激光器相比,该激光器结构简单,具有强烈的选模功能,不需要相位匹配部分,输出波长不受调谐部分热效应的影响。基于多模速率方程建立了激光器的理论和数值模型,数值仿真结果表明该激光器能在选取的15个腔模范围内完成数字调谐,且具有40 mA的较低阈值电流和适中的边模抑制比。     

Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device

A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.     

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm2 only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.     

程控宽带连续调谐外腔半导体激光器特性分析

对宽带调谐外腔半导体激光器进行了理论及实验研究,分析了其最大调谐范围和连续调谐条件,为宽带可调谐激光器的设计提供了依据。完成了实用化的程控宽带连续调上腔激光器,该器件调谐范围超过７５ｎｍ,波长重复性精度为１ｎｍ,分辨率为０．０１ｎｍ。     

Laser-diode wavelength tuning based on butt coupling into an optical fiber

An extremely short external cavity that is realized when a Fabry-Perot laser diode is butt coupled to a waveguide or a fiber produces feedback that is effective for controlled wavelength tuning. We used butt coupling to tune a high-output-power laser diode over a wide range (as great as 15 nm) while maintaining constant driving current and temperature. Single-mode or multimode operation repeatedly occurred at specific points throughout the tuning range. An analytical model that includes the effect of multiple reflections from the external cavity, each attenuated by a modal overlap integral, and which is based on phenomenological principles, shows good agreement with the experimental results.     

Tunable single-mode Fabry-Perot laser diode using a built-in external cavity and its modulation characteristics

A tunable single-mode laser is obtained by using a weakly coupled cavity structure involved in a coaxially packaged Fabry-Perot laser diode. The cleaved end facet of the coupling fiber becomes an optical reflector and forms an external cavity with a laser facet. The single-mode oscillation condition is controlled and stabilized by tuning the operating temperature. The tuning range is about 10 nm with the side-mode suppression ratio of more than 27 dB when the temperature changes from 11.5 degrees C to 25 degrees C. Direct modulation characteristics were investigated, and our results show that a shorter external cavity can bear deeper modulation depth.     

Mode-hop-free fine tuning of an external-cavity diode laser with an intracavity liquid crystal cell

A planar nematic liquid crystal (NLC) cell is incorporated into a Littman-type external cavity as the wavelength-tuning device for a semiconductor laser diode. By varying the driving voltage of the NLC cell and laser diode bias current simultaneously, we demonstrate single-mode oscillation and mode-hop-free tuning over 19.2 GHz at 775 nm. The result is in good agreement with the theoretical predictions.     

Characterization of small-signal intensity modulation of single-mode fiber grating Fabry-Perot laser source

A comprehensive study on the small-signal intensity modulation (IM) characteristics of a fiber grating Fabry-Perot (FGFP) laser is numerically investigated. The effect of external optical feedback (OFB), temperature, injection current, cavity volume, nonlinear gain compression factor, and fiber grating (FG) parameters on IM characteristics are presented. The temperature dependence (TD) of IM is calculated according to the TD of laser cavity parameters instead of using the well-known Parkove relationship. It has been shown that the optimum external fiber length (L _ext) is 3.1 cm. The optimum range of working temperature for FGFP laser is between 23 to 27 °C. We also show that by increasing the laser injection current from 10 to 60 mA, the IM peak amplitude decreased from 6.3 to 0.2 dB and the relaxation-oscillation frequency (ROF) is shifted from 1.2 GHz towards higher frequency of 5.48 GHz. In addition, the AR coating reflectivity and gain compression factor have no significant effect on the IM. The study indicates that a stable operation and excellent modulation characteristic can be obtained after optimization process.     

Design and optimization of frequency tunable semiconductor laser used in resonator integrated optic gyro

Frequency tunable semiconductor laser has potential applications in resonator integrated optic gyro (RIOG) for its small size and easy to be integrated. An alternative construction of frequency tunable semiconductor laser with planar waveguide external cavity is proposed in this paper. The frequency tuning section, which is placed between the active section and Bragg grating section, is designed to be one part of the waveguide external cavity. The slab etched grating, based on the silicon-on-isolator ridge waveguide, is adopted to narrow the width of reflectivity spectrum. After the theoretical analysis and simulations, the frequency modulation coefficient of 2.1 MHz/mA is obtained, and the power change is less than 3.6 × 10⁻⁴ dB/1.6 GHz. The proposed configuration combines the advantages of wavelength tunable laser and external cavity laser, and it can realize precision frequency tuning, ignored power fluctuation and narrow linewidth, which contribute much to RIOG.     

外腔反馈对半导体激光器振荡特性的影响

通过有效反射系数的引入，根据激光谐振腔的自再现条件和对腔内光子密度、载流子密度方程的求解，分析了外腔反馈对半导体激光器的阈值增益、振荡频率和输出功率等振荡特性的影响，并通过实验进行了验证.外腔反馈后，半导体激光器的阈值电流从420mA降为370mA，输出功率的斜率效率获得了提高，理论计算的输出功率曲线与实验结果符合的很好. 关键词： 半导体激光器 外腔反馈 振荡特性     

An 850 nm semiconductor laser tunable over a 300 Å range

We have designed and realized a compact external cavity semiconductor laser operating around 850 nm. The main characteristics are the following: a 32 nm tuning range, a stable single mode operation always attainable in this range and a linewidth of a few hundred kilohertz. This spectral purity improvement is the result of an increased photon lifetime in the external cavity. The potentiality of this solid state laser source is finally underlined.     

An external cavity diode laser using a volume holographic grating

This study presents an external cavity diode laser (ECDL) system, utilizing a volume holographic grating (VHG) and a microfabricated silicon flexure as the VHG holder. The laser design is aimed for easy assembly, controllability, and better stability of the laser cavity. The laser frequency was stabilized to a D₂ transition of rubidium at 780.247 nm, with a mode-hop-free tuning range of 16 GHz and 9.6 GHz with and without feed-forward on the diode injection current. The measured linewidth was 850 kHz in 500 s, qualified for laser cooling experiments.     

Stable and continuous wavelength tuning of a hybrid semiconductor laser with an erbium-doped fiber external cavity

We present an experimental study of tuning characteristics and wavelength stability of a 1490 nm doped fiber external cavity laser. The standing wave in the erbium-doped fiber in an external-cavity laser causes spatial hole burning and absorption modulation and forms a dynamic grating. The dynamic grating can effectively suppress side modes and eliminate wavelength fluctuations in the laser. The operating wavelength of this hybrid laser is shown for the first time to our knowledge to be smoothly tunable by changing the semiconductor laser drive current or temperature.     

500 nm continuous wave tunable single-frequency mid-IR light source for C-H spectroscopy

A computer controlled tunable mid-IR light source, based on single resonant difference frequency generation (DFG), is experimentally investigated. The DFG process is pumped by an external cavity tapered diode laser, tunable over a spectral range of 30 nm. Grating feedback to the single mode channel of the tapered diode narrows the spectrum and allows for tuning of the emitted spectrum in the range from 780 to 810 nm. The DFG process takes place intra-cavity in a high finesse diode pumped 1064 nm solid state Nd:YVO₄ laser cavity, using periodically poled LiNbO₃ as the nonlinear material. Based on this new approach, a tunable single-frequency output power exceeding 3 mW was obtained in the mid-IR tuning range from 2.9 to 3.4 ??m.     

A Narrow Line Width Tunable Diode Laser System

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基于级联光纤Bragg光栅的外腔半导体激光器三波长同时激射

实现了使用3个级联的光纤Bragg光栅外腔半导体激光器3波长同时激射.3条谱线的峰值波长取决于光纤Bragg光栅的峰值反射波长,分别为1 531.5 nm、1 549.4 nm与1 554.8 nm.注入电流为52 mA时,激光器总输出功率为1 mW.该激光器的主要优点包括,由于输出波长被锁定在光纤Bragg光栅的Bragg波长上,因此输出波长稳定,谱线窄,成本低.可应用于多波长干涉测量以及全光通信等领域中.