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High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer 下载免费PDF全文
In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application. 相似文献
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用SQUID磁强计测得了Y0.8Pr0.2Ba2Cu3O7-δ单晶在外场平行于c轴条件下的磁化强度随温度的变化。在超导转变下,除了磁化强度是可逆的以外,由于磁通涨落而导致的磁化强度交叉发生在超导转变温度以下约2K处。利用Hao-Clem模型拟合可逆磁化强度得到了热力学临界场Hc(T)和金兹堡-朗道参数k。其它超导参数由Hc(T)和k推得,比较YBa2Cu3O7-δ的热力学参数,讨论了Pr离子的效应 相似文献
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Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO_2 on Al-doped ZnO transparent conductive layer 下载免费PDF全文
We report an effective enhancement in light extraction of Ga N-based light-emitting diodes(LEDs) with an Al-doped Zn O(AZO) transparent conductive layer by incorporating a top regular textured SiO_2 layer. The 2 inch transparent throughpore anodic aluminum oxide(AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO_2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. 相似文献
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