共查询到19条相似文献,搜索用时 620 毫秒
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GaN紫外光电阴极是近年发展起来的一种高性能真空紫外探测器件,其中透射式结构作为光电阴极实际应用的工作模式,其多层结构参数及光学特性对阴极的最终光电发射性能有着重要的影响.测试了透射式GaN阴极材料的紫外透射光谱,通过建立透射式GaN阴极样品的透射模型,得到了GaN阴极样品的薄膜厚度、光学吸收系数与透射谱之间的函数关系.计算得到的GaN外延材料的厚度与实际值误差小,吸收系数与已发表数据一致,表明紫外透射光谱法能够准确地实现透射式GaN阴极材料结构及光学特性的评估. 相似文献
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采用MOCVD技术在Al2O3(0001)衬底上生长了GaN薄膜,使用透射光谱、光致发光光谱和X射线双晶衍射三种技术测试了五类GaN薄膜样品,实验结果表明:GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致,即透射率越大,半高宽越小,结晶质量越好;而X射线双晶衍射峰半高宽最小的样品,其PL谱的带边峰却很弱,这说明PL谱反映样品的光学性能与X射线双晶衍射获得的结晶质量不存在简单的对应关系,同时还报导了一种特殊工艺生长的高阻GaN样品的RBS/沟道结果。 相似文献
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利用直流磁控共溅射方法制备了GaN:Er薄膜.X射线衍射结果显示薄膜为纳米多晶结构,根据谢乐公式,计算得到了GaN薄膜晶粒的平均大小为5.8nm;透射电子显微镜结果显示为非晶基质中镶嵌了GaN纳米颗粒,尺寸在6-8nm之间;紫外可见谱结果表明在500-700nm的可见光范围内,薄膜的平均透过率大于80%,在紫外可见谱基础上,利用Tauc公式计算得到了纳米晶GaN薄膜的光学带隙为3.22eV;最后,测量了GaN:Er薄膜的室温光致发光谱,获得了Er3 离子在554nm处的强烈绿光发射. 相似文献
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利用直流磁控共溅射方法制备了GaN:Er薄膜.X射线衍射结果显示薄膜为纳米多晶结构,根据谢乐公式,计算得到了GaN薄膜晶粒的平均大小为58nm;透射电子显微镜结果显示为非晶基质中镶嵌了GaN纳米颗粒,尺寸在6—8nm之间;紫外可见谱结果表明在500—700nm的可见光范围内,薄膜的平均透过率大于80%,在紫外可见谱基础上,利用Tauc公式计算得到了纳米晶GaN薄膜的光学带隙为322eV;最后,测量了GaN:Er薄膜的室温光致发光谱,获得了Er3+离子在554nm处的强烈绿光发射.
关键词:
纳米晶GaN薄膜
3+掺杂')" href="#">Er3+掺杂
光学带隙
光致发光 相似文献
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采用常压金属有机化学汽相沉积(MOCVD)技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射/沟道技术、光透射谱、光致发光光谱对InxGa1-xN/GaN/AI2O3样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明,采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致,InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为0.04,0.06,0.24,0.26时,其弯曲因子分别为3.40,2.36,1.82,3.70。随In组分变化。InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律,表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。 相似文献
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<正>A method to drastically reduce dislocation density in a GaN film grown on an Si(111) substrate is newly developed. In this method,the Si_xN_y interlayer which is deposited on an A1N buffer layer in situ is introduced to grow the GaN film laterally.The crack-free GaN film with thickness over 1.7 micron is successfully grown on an Si(111) substrate. A synthesized GaN epilayer is characterized by X-ray diffraction(XRD),atomic force microscope(AFM),and Raman spectrum.The test results show that the GaN crystal reveals a wurtzite structure with the(0001) crystal orientation and the full width at half maximum of the X-ray diffraction curve in the(0002) plane is as low as 403 arcsec for the GaN film grown on the Si substrate with an Si_xN_y interlayer.In addition,Raman scattering is used to study the stress in the sample.The results indicate that the Si_xN_y interlayer can more effectively accommodate the strain energy.So the dislocation density can be reduced drastically,and the crystal quality of GaN film can be greatly improved by introducing an Si_xN_y interlayer. 相似文献
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Tsutomu Minegishi Takuma Suzuki Chihiro Harada Hiroki Goto Meoung-Whan Cho Takafumi Yao 《Current Applied Physics》2004,4(6):685-687
GaN films were grown on ZnO substrate under various beam equivalent pressure ratios by plasma-assisted molecular beam epitaxy (P-MBE). We theoretically calculated the thermal stress caused by the difference of thermal expansion coefficients between GaN and ZnO. The changes of stress and critical thickness were evaluated by measurement of XRD for HT GaN and LT GaN buffer grown under Ga-rich and N-rich conditions. From this study, we observed that GaN grown under Ga-rich condition causes GaN film to under compressive-stress, while GaN grown under N-rich condition was tensile-stressed. Consequently, interdiffusion has no effect on the variation of the critical thickness. 相似文献
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A method to drastically reduce dislocation density in a GaN film grown on an Si(111) substrate is newly developed. In this method, the SixNy interlayer which is deposited on an AlN buffer layer in situ is introduced to grow the GaN film laterally. The crack-free GaN film with thickness over 1.7 micron is grown on an Si(111) substrate successfully. Synthesized GaN epilayer is characterized by X-ray diffraction (XRD), atomic force microscope (AFM), and Raman spectrum. The test results show that the GaN crystal reveals a wurtzite structure with the <0001> crystal orientation and the full width at half maximum of the X-ray diffraction curve in the (0002) plane is as low as 403 arcsec for the GaN film grown on the Si substrate with an SixNy interlayer. In addition, Raman scattering is used to study the stress in the sample. The results indicate that the SixNy interlayer can more effectively accommodate the strain energy. So the dislocation density can be reduced drastically, and the crystal quality of GaN film can be greatly improved by introducing SixNy interlayer. 相似文献
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准确预测GaN半导体材料的热导率对GaN基功率电子器件的热设计具有重要意义.本文基于第一性原理计算和经典Debye-Callaway模型,通过分析和完善Debye-Callaway模型中关于声子散射率的子模型,建立了用于预测温度、同位素、点缺陷、位错、薄膜厚度、应力等因素影响的GaN薄膜热导率的理论模型.具体来说,对声子间散射项和同位素散射项基于第一性原理计算数据进行了系数拟合,讨论了两种典型的处理点缺陷和位错散射的散射率模型,引入了应用抑制函数描述的各向异性边界散射模型,并对应力的影响进行了建模.热导率模型预测值和文献中典型实验数据的对比表明,基于第一性原理计算数据拟合的热导率模型和实验测量值总体符合较好,300 K温度附近热导率数值及其随温度变化的趋势存在20%左右的偏差.结合实验数据和热导率模型进一步确认了第一性原理计算会高估同位素散射的影响,给出了薄膜热导率随薄膜厚度、位错面密度、点缺陷浓度的具体变化关系,同位素和缺陷散射会减弱薄膜热导率的尺寸效应,主要体现在100 nm附近及更小的厚度范围. 相似文献
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采用脉冲激光沉积 (PLD) 方法在Si及SiC基底上制备了相同厚度的GaN纳米薄膜并对其进行了微结构表征及场发射性能测试分析. 结果表明: 基底对于GaN薄膜微结构及场发射性能具有显著的影响. 在SiC基底上所制备的GaN纳米薄膜相对于Si基底上的GaN纳米薄膜, 其场发射性能得到显著提升, 其场发射电流可以数量级增大. 场发射显著增强应源于纳米晶微结构及取向极化诱导增强效应. 本研究结果表明, 要获得优异性能场发射薄膜, 合适基底及薄膜晶体微结构需要重点考虑.
关键词:
基底
GaN
纳米薄膜
场发射 相似文献
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In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 μm. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer. 相似文献
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GaN是一种理想的紫外发光和探测材料,其光学特性参数是光学器件设计的重要依据。采用紫外反射与透射光谱相结合的方法对国产GaN外延层进行光学特性测量,利用反射率与折射率之间的关系和薄膜干涉效应,建立了GaN外延层厚度、表面反射率、光谱吸收系数的光谱测量公式。测量结果表明,GaN外延层在紫外波段存在三个吸收区,其中364nm以下波段为强吸收区,吸收系数接近10^5cm^-1,364~375nm为吸收过渡区,375nm以上波段为弱吸收区;GaN表面反射率在三个吸收区的变化不大,为0.2~0.25之间。 相似文献
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Influence of double A1N buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition 下载免费PDF全文
<正>In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers.The buffer layer consists of a low-temperature(LT) AlN layer and a high-temperature(HT) AlN layer that are grown at 600℃and 1000℃,respectively.It is observed that the thickness of the LT-AlN layer drastically influences the quality of GaN thin film,and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film.The reason for the improved properties is discussed in this paper. 相似文献
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G. Monier L. Bideux C. Robert-Goumet B. Gruzza M. Petit J.L. Lábár M. Menyhárd 《Surface science》2012,606(13-14):1093-1099
The benefits of using a low power glow discharge nitrogen plasma source to create high quality GaN layers on GaAs(001) surface are first highlighted. This uncommon type of plasma source has the particularity of working at a low power (3–10 W) and a low pressure (10? 1 Pa) which induce creation of a small quantity of active nitrogen species. We put in evidence that this distinctiveness allows the growth of a stoichiometric and As-free GaN ultra-thin film on a GaAs(001) substrate by the mean of the inter-diffusion of As and N atoms. XPS, EELS, AFM are used to monitor surface composition and structure changes and to estimate the GaN thickness. A near saturation of the nitride layer thickness versus plasma exposure time is found. Furthermore, the possibility to crystallize the amorphous GaN layer by an annealing at 620 °C in a cubic structure with a lattice parameter close to that of c-GaN is put in evidence by means of TEM and LEED measurements. These measurements also show the homogeneity of the GaN thickness. In addition, the passivating effect of the GaN ultra-thin film to protect the GaAs surface is proved with the monitoring by XPS of the surface oxidation during several days of air exposure. 相似文献