In-Situ High Pressure Raman Spectrum and Electrical Property of PbMoO4

In-situ high pressure Raman spectra and electrical conductivity measurements of scheelite-structure compound PbMoO4 are presented. The Raman spectrum of PbMoO4 is determined up to 26.5 GPa on a powdered sample in a diamond anvil cell （DAC） under nonhydrostatic conditions. The PbMoO4 gradully experiences the trans- formation from the crystal to amorphous between 9.2 and 12.5 GPa. The crystal to amorphous transition may be due to the mechanical deformation and the crystalographic transformation. Furthermore, the electrical conductivity of PbMoO4 is in situ measured accurately using a microcircuit fabricated on a DAC based on the van der Pauw method. The results show that the electrical conductivity of PbMoO4 increases with increases of pressure and temperature. At 26.5 GPa, the electrical conductivity value of PbMoO4 at 295K is 1.93 - 10-4 S/cm, while it raises by one order of magnitude at 430K and reached 3.33 - 10-3 S/cm. However, at 430K, compared with the electrical conductivity value of PbMoO4 at 26.5 GPa, it drops by about two order magnitude at 7.4 GPa and achieves 2.81 × 10^-5 S/cm. This indicates that the effect of pressure on the electrical conductivity of PbMoO4 is more obvious than that of temperature.     

Crystal structure and ionic conductivity of Mg-doped apatite-type lanthanum silicates LaloSi6-xMgxO27-x （x= 0-0.4）

Lanthanum silicates LaloSi6 xMgxO27_x （x = 0-0.4） were prepared by solid state synthesis to investigate the effect of Mg doping on crystal structure and ionic conductivity. Rietveld analysis of the powder XRD patterns reveals that Mg substitution on Si site results in significant enlargement of channel triangles, favoring oxide-ion conduction. Furthermore, an increase of Mg concentration significantly influences the linear density of interstitial oxygen, which plays an important role in ionic conductivity. The Arrhenius plots of LaloSi6_xMgxO27 x （x = 0-0.4） suggest that Mg-doped samples present higher conductivity and lower activation energy than non-doped La10Si6027, and LaloSis.8Mgo.2026.8 exhibits the highest conductivity with a value of 3.0× 10-2 S .cm 1 at 700 ℃. Such conductive behavior agrees well with the refined results. The corresponding mechanism has been discussed in this paper.     

The molecular structure and the analytical potential energy function of S2^- and S3^-

In this paper, the equilibrium geometry, harmonic frequency and dissociation energy of S2^- and S3^- have been calculated at QCISD/6-311＋＋G（3d2f） and B3P86/6-311＋＋G（3d2f） level. The S2^- ground state is of 2IIg, the S3^- ground state is of 2B1 and S3^- has a bent （C2v） structure with an angle of 115.65° The results are in good agreement with these reported in other literature. For S3^- ion, the vibration frequencies and the force constants have also been calculated. Base on the general principles of microscopic reversibility, the dissociation limits has been deduced. The Murrell-Sorbie potential energy function for S2^- has been derived according to the ab initio data through the least- squares fitting. The force constants and spectroscopic data for S2^- have been calculated, then compared with other theoretical data. The analytical potential energy function of S3^- have been obtained based on the many-body expansion theory. The structure and energy can correctly reappear on the potential surface.     

Simulations of Effect of High-Index Materials on Highly Birefringent Photonic Crystal Fibres

Novel highly birefringent photonic bandgap fibres （PBGFs） are obtained by filling of a high index material in the air holes of total internal reflection birefringent photonic crystal fibres. The effect of the filling high index material on the transmission characteristics has been theoretically investigated. The photonic bandgap has been achieved by using plane-wave method. Moreover, the phase and group modal birefringence have been studied by a full-vector finite-element method. Numerical results show that very high group and phase modal birefringence with magnitude of order of 10^-2 and 10^-3 has been respectively acquired, which is much higher than those of the non-filled fibres. Furthermore, strong coupling between surface modes and the fundamental modes has been found in the bandgap of the birefringent PBGFs, whose effect on the birefringence and confinement loss has also been discussed.     

Characterization of Er3+-doped Na2O-WO3-TeO2 glass for ion-exchanged waveguide amplifiers and lasers

Er3+-doped Na2O-WO3-TeO2 glass consistent with standard ion-exchange technology has been fabricated and characterized. The measured absorption and emission spectra of the glass were analyzed by the JuddOfelt and McCumber theories. The intensity parameters are Ω2 = 7.01 × 10-20 cm2, Ω4 = 1.80 × 10-20 cm2, Ω6 = 1.03 × 10-20 cm2. The maximum emission cross-section is 0.91 × 10-20 cm2 at 1.533 μm, and a broad 1.5-μm emission spectrum of 65-nm full width at half-maximum (FWHM) is demonstrated. Glass transition temperature, crystallization onset temperature, density, refractive index are also reported for reference in the design and modelling of the ion-exchange process.     

Judd--Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the Tm^3＋：Lu2SiO5 （Tm：LSO） crystal is grown by Czochralski technique. The roomtemperature absorption spectra of Tm：LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Ω2=9.3155×10^-20 cm^2, Ω4=8.4103×10^-20 cm^2, Ω6=1.5908×10^-20 cm^2, the fluorescence lifetime is calculated to be 2.03 ms for ^3F4 → ^3H6 transition, and the integrated emission cross section is 5.81×10^-18 cm^2. Room-temperature laser action near 2μm under diode pumping is experimentally evaluated in Tm：LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuouswave maximum output power of 0.67 W. The emission wavelengths of Tm：LSO laser are centred around 2.06μm with spectral bandwidth of -13.6 nm.     

Measurement of Branching Ratio of Deuteron Induced Reactions on ^2H at 20 keV

The γ-rays and protons from Ed = 20keY deuterons incident on a D-Ti target are measured. The branching ratio of the 2H （d, γ）4He reaction to the ^2H （d, p）^3H reaction is obtained to be Гγ/Гp= （1.06 ±0.42） ×10^-7, and the astrophysical S factor of the ^2He（d, γ）^4He reaction is deduced to be （5.7±2.4）×10^-6.     

Large-Area Self-Assembly of Rubrene on Au（111） Surface

Large-area self-assembly of rubrene has been fabricated on Au（111） surface and studied by scanning tunnelling microscopy. The rubrene monolayer on A u（111） surface is characterized by well-ordered row-like structures similar to the a-b plane of rubrene single crystal. However, the directions of the neighboured molecular rows are opposite to each other. In a two-layer film of rubrene on Au（111） surface, the arrangements of the top molecular rows are determined by the underneath rows, suggesting an orthorhombic crystal structure with a = 1.26 nm, b = 4.36 nm, c = 0.17nm for multilayer ofrubrene on Au（111）.     

Crystal field analysis of the magnetic properties of RFe11Ti and RFe11TiH （R=Sm, Tb, Ho）

The crystalline-electric-field parameters Anm for RFe11Ti and RFe11TiH （R=Sm, Tb, Ho） are evaluated by fitting calculations to the magnetization curves measured on the single crystals or on magnetically aligned powder samples at 4.2K and higher temperatures. Interstitial hydrogen atom in RFe11Ti has been found to have a significant effect on crystalline-electric-field parameters Anm. By using the parameters of exchange field 2μBHex estimated from inelastic neutron scattering experiments and the fitted Anm, the calculations can reproduce the experimental curves well.     

Magnetostriction of Fe81Ga19 oriented crystals

The effect of the orientation on the magnetostriction in Fe 81 Ga 19 alloy has been investigated experimentally and theoretically.The Fe 81 Ga 19 [001] and [110] oriented crystals were prepared and the magnetostriction was measured under different pre-stress.The saturation magnetostriction of the [001] oriented crystal increases from 170×10-6 to 330×10-6 under the pre-stress from 0 to 50 MPa.The [110] oriented crystal has a saturation magnetostriction from 20×10-6 to 140×10-6 with the compressive pre-stress from 0 to 40 MPa.The magnetostriction of [001] and [110] oriented crystals has been simulated based on the phenomenological theory.The domain rotation path has been determined and the resultant magnetostriction calculated under different pre-stress.The experimental and simulated results both show that the [001] oriented crystal exhibits better magnetostriction than [110] oriented crystal.The enhancement of the saturation magnetostriction by the compressive pre-stress in the [110] oriented crystal is higher than that in the [001] oriented crystal.     

2-3-Benzacridinium (TCNQ)2: A small bandgap semiconductor

Single crystal conductivity and thermoelectric power experiments on 2-3-BAd(TCNQ)₂ are interpreted in terms of a highly anisotropic band semiconductor model. This behaviour is contrasted to that found in Ad(TCNQ)₂ and is claimed to be due to the difference in the dipole moments of the donors.     

A novel intrinsically proton conducting star-shaped imidazole terminated oligomers

In this paper, intrinsically proton conducting imidazole-terminated oligomers were synthesized by tethering imidazole units via flexible ethylene oxides (EO) chain onto 1,3,5-benzenetricarbonyl chloride (TMA). The structure of the resulting material was confirmed by FT-IR; ¹H-NMR spectrometer and compositions were obtained by elemental analysis. Thermogravimetry results showed that the materials are thermally stable up to approximately 160 °C. Differential scanning calorimeter studies were performed to study the influence of the length of EO units on the glass transition temperatures of the materials. The conductivity isotherms exhibit Vogel–Tamman–Fulcher behavior with a maximum proton conductivity of at 110 °C for TMA-(Peg₆₀₀-Imi)₃.     

Search for new oxide-ion conducting materials in the ceria family of oxides

We have adopted a modified combustion route, namely, a mixed fuel process (MFP) to prepare a novel series of nano-crystalline single- and multiple-doped ceria compositions with controlled powder characteristics, large surface area, finer particle size, high sinterability, and high oxide ion conductivity at intermediate temperatures (500–700 °C). Using the mixed fuel process, we have prepared nano-particles of single- and multiple-doped ceria powders with dopants such as Ca, Gd, and Sm and a suitable combination of the same. In the pursuit for identifying new oxide-ion-conducting materials in this family of oxides, we have pursued the idea of co-doping effect on the single doped compositions with proper introduction of a second dopant. Effect of these dopants on the thermal decomposition and physico–chemical characteristics of the precursor and the powders prepared thereby were studied in detail. Finally, the effects of multiple co-doping on the microstructural and electrical properties were compared to understand the origin of the effect of dopant characteristics on the oxide ion conductivity of Ce_1−x M _x O₂ solid solutions. Our experimental results established unequivocally that co-doping is very effective in identifying new materials with remarkably high ionic conductivity with substantial reduction in the cost for technological applications. Among the studied compositions, the maximum conductivity with minimum activation energy was observed for the triply co-doped CCGS composition (; E _a = 0.56 eV), which is much higher compared to the conductivity exhibited by most of the reported co-doped ceria compositions. In conclusion, an effective way to improve the oxide ion conductivity of ceria-based oxides by proper choice of dopants and co-doping is achieved.     

Li2Mo2O6多晶材料的结构与电性能的研究

本文用固相反应烧结制备出Li₂Mo₂O₆多晶材料。经X射线分析、红外光谱和电子顺磁共振谱(EPR)的研究,确定了它的结构是Li₂Mo₂O₄和MoO₂两个晶相组成的烧结体。钼离子以四价状态存在于MoO₂晶相结构中。采用交流阻抗谱分析了晶界与温度变化的相关性。测得了样品的ln(σ_总T)-1/T 曲线是由两段直线和一段曲线所组成;总电导率化能σ_27℃=1.36×10^-3(Ω·cm)^-1,σ_115℃=1.49×10^-3(Ω·cm)^-1,σ_300℃=9.71×10^-3(Ω·cm)^-1,σ_370℃=2.42×10^-3(Ω·cm)^-1;电导活化能E₁=0.043eV,E₂=0.235eV,E_平均=0.76eV。采用维格纳极化电池法测得电子电导率σ_e,σ_e27℃=2.240×10^-5(Ω·cm)^-1,σ_e300℃=4.476×10^-3(Ω·cm)^-1。实验证明,室温下材料为固体电解质,300℃附近为良好的离子与电子混合导体。 关键词：     

Infrared reflectivity of MTPA (TCNQ)2 single crystals

Polarized infrared reflectivity of single crystal MTPA (TCNQ)₂ was measured in the 40–4000 cm^?1 region and evaluated to obtain the dielectric function and conductivity. For E ⊥ b polarization, a very strong coupling between TCNQ intramolecular vibrations and electronic motion is observed. The bare electronic absorption is modelled by a sum of two classical oscillators.     

High frequency study of electropolymerised conducting polypyrrole thin film

The polypyrrole (PPY) thin films were synthesized by electropolymerisation in potassium nitrate solution. The substrate used was stainless steel. DC conductivity, microwave reflection, microwave conductivity and microwave dielectric constant of the conducting PPY thin films are reported. DC conductivity was between 1.6 × 10⁻² S/cm and 42.3 × 10⁻² S/cm. Microwave conductivity was between 10 S/cm and 160 S/cm. The ?′ generally decreases as frequency increases similarly ?″ also decreases with increases in frequency. The measurements have been carried over the frequency range 8.2-12 GHz. These polypyrrole thin films were characterized by FTIR. The polypyrrole thin film increases the reflectivity of the stainless steel.     

Spin‐freezing in superconducting La2CuO4.03 single crystal

Electron spin‐freezing at T_f=8 K has been detected in superconducting (T_c=12\ K) single crystal La₂CuO_4+y (y\simeq0.03) by ZF‐μSR. According to diffraction data, the crystal is in Bmab phase without any traces of structural phase separation. TF‐μSR experiment has shown that no Abrikosov flux line lattice is formed below T_c. The data allow us to assume that the magnetic and superconducting regions in the crystal are space separated on the microscopic scales ~ 10² Å. The presence of large field induced broadening of the Knight shift distribution k_\sigma > 1000 ppm indicates that the crystal contains micro‐regions possessing enhanced magnetic susceptibility.     

Oxygen-vacancy-related dielectric relaxation and conduction mechanisms in Bi5TiNbWO15 ceramics

This paper reports that the intergrowth ceramics Bi5TiNbWO15 （BW-BTN） have been prepared with the conventional solid-state reaction method. The dielectric and conductivity properties of samples were studied by using the dielectric relaxation and AC impedance spectroscopy in detail. Two distinct relaxation mechanisms were detected both in the plots of dielectric loss （tanδ） and the imaginary part （Z″） versus frequency in the frequency range of 10 Hz-13 MHz. We attribute the higher frequency relaxation process to the hopping process of the oxygen vacancies inside the grains, while the other seems to be associated with the space charges bound at the grain boundary layers. The AC impedance spectroscopy indicates that the conductivities at 625 K for bulk and grain boundary are about 1.12 × 10^-2 S/m and 1.43 × 10^-3 S/m respectively. The accumulation of the space charges in the grain boundary layers induces a space charge potential of 0.52 eV.     

Oxidation of silicon surface with atomic oxygen radical anions

The surface oxidation of silicon （Si） wafers by atomic oxygen radical anions （O- anions） and the preparation of metal-oxide-semiconductor （MOS） capacitors on the O-oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al2sO64]^4＋·4O^- （Cl2A7-O^- for short）. After it has been irradiated by an O- anion bean： （0.5 μA/cm^2） at 300℃ for 1-10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32 nm. X-ray photoelectron spectroscopy （XPS） results reveal that the oxide layer is of a mixture of SiO2, Si2 O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of 〈Al electrode/SiOx/Si〉 are investigated by measuring capacitance-voltage （C - V） and current-voltage （I - V） curves. The oxide charge density is about 6.0 × 10^1 cm^-2 derived from the （C - V curves. The leakage current density is in the order of 10^-6 A/cm^2 below 4 MV/cm, obtained from the I - V curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.     

Effects of Nb2O5 on thermal stability and optical properties of Er3+-doped tellurite glasses

Er³⁺-doped tellurite glasses with molar compositions of xNb₂O₅-(14.7-x)Na₂O--10ZnO--5K₂O--10GeO₂-- 60TeO₂--0.3Er₂O₃ (x=0, 3, 5, 7 and 9) have been investigated for developing 1.5~μm fibre and planar amplifiers. The effects of Nb₂O₅ on the thermal stability and optical properties of Er³⁺-doped tellurite glasses have been discussed. It is noted that the incorporation of Nb₂O₅ (x=5) increases the thermal stability of tellurite glasses significantly. Er³⁺-doped niobium tellurite glasses exhibit a large stimulated emission cross-section (7.2\times 10^-21- 10.7×10^-21~cm² and the gain bandwidth, FWHM×\sigma_e^{\rm peak} (274\times 10^-28 - 480×10^-28~cm³), which are significantly higher than that of silicate and phosphate glasses. In addition, the intensity of upconversion luminescence of the Er³⁺-doped niobium tellurite glasses decreases rapidly with increasing Nb₂O₅ content. As a result, Er³⁺-doped niobium tellurite glasses might be a potential candidate for developing laser or optical amplifier devices.