Oxidation of silicon surface with atomic oxygen radical anions |
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Authors: | Wang Lian Song Chong-Fu Sun Jian-Qiu Hou Ying Li Xiao-Guang and Li Quan-Xin |
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Institution: | Department of Chemical Physics, University of
Science
& Technology of China, Hefei 230026, China; Department of Physics, University of Science &
Technology of China, Hefei 230026, China |
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Abstract: | The surface oxidation of silicon (Si) wafers by atomic oxygen radical
anions (O- anions) and the preparation of
metal--oxide--semiconductor (MOS) capacitors on the O--oxidized Si substrates have been examined for the first time. The
O- anions are generated from a recently developed O-
storage-emission material of Ca24Al28O64]4+.4O- (C12A7-O- for short). After it has been
irradiated by an O- anion beam (0.5\mu A/cm2) at
3000C for 1--10 hours, the Si wafer achieves an oxide layer
with a thickness ranging from 8 to 32nm. X-ray photoelectron
spectroscopy (XPS) results reveal that the oxide layer is of a
mixture of SiO2, Si2O3, and Si2O distributed in
different oxidation depths. The features of the MOS capacitor of
x/Si> are investigated by measuring
capacitance-voltage (C-V) and current-voltage (I-V) curves. The
oxide charge density is about 6.0 \times 1011cm2
derived from the C-V curves. The leakage current density is in the
order of 10-6A/cm2 below 4MV/cm, obtained from the
$I-V$ curves. The O- anions formed by present method would
have potential applications to the oxidation and the
surface-modification of materials together with the preparation of
semiconductor devices. |
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Keywords: | O- anions silicon
oxidation MOS capacitor electrical properties |
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