化学气相沉积法制备Zn2GeO4纳米线及其发光性质的研究

利用化学气相沉积法（CVD）,气-液-固（VLS）生长法则在表面溅有金属Au催化剂层的1 cm×1 cm的Si片上制备三元Zn₂GeO₄纳米线。X射线衍射仪（XRD）测试结果表明,锌源与锗源质量比为8：1时可成功制备出Zn₂GeO₄纳米结构;扫描电子显微镜（SEM）测试结果表明,Zn₂GeO₄纳米线直径为100 nm,长度为10~11 μm;光致发光（PL）测试结果表明,Zn₂GeO₄纳米线在432和480 nm处具有两个发光峰,最后对其生长机理进行了分析。     

用于白光LED的高亮度蓝白色荧光粉Ca2SiO3Cl2：Eu2+的发光性质

采用固相法在较低温度下合成了Eu²⁺激活的Ca₂SiO₃Cl₂高亮度蓝白色发光材料,并对其发光性质进行了研究。其发射光谱由两个谱带组成,峰值分别位于420,498nm处,归结为Ca₂SiO₃Cl₂晶体中占据两种不同Ca²⁺格位的Eu²⁺离子的5d→4f跃迁发射。改变Eu²⁺浓度,可以使样品的发光在蓝白色和绿白色之间变化。当Eu²⁺浓度为0.005mol^-1时,样品呈现很亮的蓝白色发光。两个发射峰的激发光谱均分布在250~410nm的波长范围内,峰值分别位于333,369nm处。Ca₂SiO₃Cl₂:Eu²⁺可被InGaN管芯产生的近紫外辐射有效激发,是一种性能良好的白光LED用单一基质蓝白色荧光粉。     

Ca2SiO4:Dy3+材料的制备及其发光特性

采用高温固相法制备了Ca₂SiO₄:Dy³⁺发光材料.在365nm紫外光激发下,测得Ca₂SiO₄:Dy³⁺材料的发射光谱为一多峰宽谱,主峰分别位于486nm,575nm和665nm处;监测575nm发射峰,测得材料的激发光谱为一多峰宽谱,主峰分别位于331nm,361nm,371nm,397nm,435nm,461nm和478nm处.研究了Dy³⁺掺杂浓度对Ca₂SiO₄:Dy³⁺材料发射光谱及发光强度的影响,结果显示,随Dy³⁺浓度的增大,黄、蓝发射峰强度比(Y/B)逐渐增大,利用Judd-Ofelt理论解释了其原因;随Dy³⁺浓度的增大,Ca₂SiO₄:Dy³⁺材料发光强度先增大,在Dy³⁺浓度为4 mol%时到达峰值,而后减小,根据Dexter理论其浓度猝灭机理为电偶极-电偶极相互作用.研究了电荷补偿剂Li⁺,Na⁺和K⁺对Ca₂SiO₄:Dy³⁺材料发射光谱的影响,结果显示,不同电荷补偿剂下,随电荷补偿剂掺杂浓度的增大,Ca₂SiO₄:Dy³⁺材料发射光谱强度的演化趋势相同,即Ca₂SiO₄:Dy³⁺材料发射峰强度先增大后减小,但不同电荷补偿剂下,材料发射峰强度最大处对应的补偿剂浓度不同,对应Li⁺,Na⁺和K⁺时,浓度分别为4mol%,4mol%和3mol%. 关键词： 白光LED 2SiO₄:Dy³⁺')" href="#">Ca₂SiO₄:Dy³⁺ 发光特性 电荷补偿     

应力发光材料Sr2SiO4∶Eu,Dy的光谱性质研究

采用高温固相法制备一系列Sr₂SiO₄∶Eu_0.01, Dy_x(x=0.000 1, 0.002 5, 0.005, 0.01)应力发光材料,研究了不同掺杂浓度下,Sr₂SiO₄∶Eu, Dy的光致发光和应力发光性质。研究结果表明在掺杂Dy3+浓度较低时,样品同时存在α和β两种相,当掺杂Dy3+浓度增加时,则出现β到α的相转变。由于Eu2+占据Sr2+格位的不同,样品在蓝光区486 nm(Sr1)和绿光区530 nm(Sr2)有两个峰存在。而应力发光光谱与余辉光谱类似,均只呈现出530 nm的发光,这说明二者的发光来源于占据Sr2格位的Eu2+,都是通过改变陷阱的浓度实现发光性能的变化,但Sr₂SiO₄∶Eu, Dy的应力发光强度的变化还与其结构改变有关。同时,Sr₂SiO₄∶Eu, Dy应力发光强度与所施加的力之间呈良好的线性关系,并且可用眼睛观察到明显的黄色应力发光,这为应力发光传感器准确检测物体所受应力提供依据。结合余辉、热释以及应力发光性质,推测Sr₂SiO₄∶Eu, Dy的应力发光机制应是压电产生的电致发光。     

红色长余辉材料Mg2SiO4：Dy3+,Mn2+的制备及发光特性

用高温固相法制备了长余辉发光材料Mg₂SiO₄:Dy³⁺,Mn²⁺,对这种材料的红色长余辉性质进行了研究.对以不同掺杂浓度单掺杂Mn²⁺、单掺杂Dy³⁺以及双掺杂Dy³⁺,Mn²⁺的Mg₂SiO₄体系,通过在紫外激发下的发射光谱及其激发光谱的研究,确认了在双掺杂体系中,峰值为660nm的发光带对应着Mn²⁺的⁴T₁(⁴G)→⁶A₁(⁶S)跃迁,Mn²⁺为主要发光中心.Mn²⁺的660nm发射的激发谱分布很宽,样品在近紫外和可见光区都有良好的吸收,长波边可达600nm,是这种材料的一个显著优点.还研究了双掺杂体系中Dy³⁺对Mn²⁺的660nm发光带的敏化作用.另外,通过对单掺杂、双掺杂体系热释光曲线的比较,揭示了双掺杂体系中Dy³⁺的陷阱作用.     

M2SiO4：Re(M=Mg,Ca,Ba;Re=Ce3+,Tb3+)的发光性能

合成了系列M₂SiO₄:Re(M=Mg,Ca,Ba;Re=Ce³⁺,Tb³⁺)样品,研究了样品在真空紫外区域的激发光谱和发射光谱。从激发谱可以看出:M₂SiO₄:Re(M=Mg,Ca,Ba;Re=Ce³⁺,Tb³⁺)在147,172nm有很强的吸收带。用Mg,Ca完全取代Ba₂SiO₄:Tb³⁺中的Ba,相对应的晶体的晶格参数逐渐增大,晶场的能量逐渐减少,其激发光谱随着碱土离子半径的增加向长波方向移动。在172nm真空紫外光激发下,观察到M₂SiO₄:Re(M=Mg,Ca,Ba;Re=Tb³⁺和M₂SiO₄:Re(M=Mg,Ca,Ba;Re=Ce³⁺,Tb³⁺)特征发射;在真空紫外激发下,随着M₂SiO₄:Re(M=Mg,Ca,Ba;Re=Ce³⁺,Tb³⁺)中Ce³⁺含量的增加,M₂SiO₄:Re的特征发射明显减弱,并分析讨论了相关发光现象的成因。     

MgO对Sr2SiO4:Eu2+荧光粉发光性质的影响

通过在Sr₂SiO₄:Eu²⁺荧光粉中加入MgO,提高了Sr₂SiO₄:Eu²⁺荧光粉的蓝光和黄光发射带的发射强度,研究了MgO浓度对Sr₂SiO₄:Eu²⁺荧光粉发光强度的影响。当Mg与Si的量比在1.0附近时,荧光粉的亮度较高,且发光颜色为白色。通过调节Sr₂SiO₄:yEu²⁺ ,MgO荧光粉中Eu²⁺的掺杂浓度,可以调节荧光粉的发光颜色。用Sr₂SiO₄:Eu²⁺ ,MgO和400 nm的InGaN管芯制备的白光LED,色坐标优于α'-Sr₂SiO₄:Eu²⁺和β-Sr₂SiO₄:Eu²⁺荧光粉制成的白光LED,显色指数和流明效率高于β-Sr₂SiO₄:Eu²⁺和α'-Sr₂SiO₄:Eu²⁺制成的白光LED。     

Ba2SiO4:Ce3+,Mn2+荧光粉的制备与光谱性质

用高温固相反应法合成了Ba₂SiO₄:xCe³⁺,yMn²⁺(x=0~0.2, y=0~0.15)荧光粉,研究了荧光粉的晶体结构和发光性质。在紫外光激发下,Ba₂SiO₄:xCe³⁺的发射光谱为位于384 nm附近的宽带。Ba₂SiO₄:Mn²⁺样品的发射光谱位于376 nm的宽带较强,红光发射极弱。在Ce³⁺和Mn²⁺共掺的Ba₂SiO₄:xCe³⁺,yMn²⁺样品中,位于606 nm附近的红光发射较强,来源于Mn²⁺的⁴T₁(⁴G)-⁶A₁(⁶S)跃迁。这说明Ce³⁺离子将部分能量传递给了Mn²⁺离子,有效地敏化了Mn²⁺离子的发光。当Ce³⁺的摩尔分数为0.2、Mn²⁺的摩尔分数为0.075时,Ba₂SiO₄:xCe³⁺,yMn²⁺荧光粉位于606 nm的Mn²⁺的发射峰最强。     

Au/(SiO2/Si/SiO2)纳米双势垒/n+-Si结构的电致发光研究

利用射频磁控溅射方法,在n⁺-Si衬底上淀积SiO₂/Si/SiO_{2纳米双势垒单势阱结构,其中Si层厚度为2至4nm,间隔为0.2nm,邻近n⁺-S i衬底的SiO2层厚度固定为1.5nm,另一SiO2层厚度固定为3nm.为了 对比研究,还制备了Si层厚度为零的结构,即SiO2(4.5nm)/n⁺-Si 结构.在经过600℃氮气下退火30min,正面蒸上半透明Au膜,背面也蒸Au作欧姆接触后,所 有样品都在反向偏置(n^＋-Si的电压高于Au电极的电压)下发光,而在正向偏压 下不发光.在一定的反向偏置下,电流和电致发光强度都随Si层厚度的增加而同步振荡,位 相相同.所有样品的电致发光谱都可分解为相对高度不等的中心位于2.26eV(550nm)和1.85eV (670nm)两个高斯型发光峰.分析指出该结构电致发光的机制是：反向偏压下的强电场使Au/( SiO2/Si/SiO2)纳米双势垒/n⁺-Si结构发生了雪崩击穿 ,产生大量的电子-空穴对,它们在纳米SiO2层中的发光中心(缺陷或杂质)上复 合而发光. 关键词： 电致发光 纳米双势垒 高斯型发光峰 雪崩击穿}     

Ba5SiO4Cl6: Yb3+, Er3+, Li+荧光粉的制备及上转换发光性质研究

本文采用高温固相反应法制备了Ba₅SiO₄Cl₆: Yb³⁺, Er³⁺, Li⁺ 荧光粉, 并对其上转换发光性质及其发光机理进行了研究. 在980 nm 激光的激发下, Ba₅SiO₄Cl₆: Yb³⁺, Er³⁺ 荧光粉呈现较强的红色(662 nm) 和较弱的绿色(550 nm) 的上转换发光, 红色和绿色的上转换发光分别对应于Er³⁺ 离子的⁴S_3/2/²H_11/2→⁴I_15/2 和⁴F_9/2→⁴I_15/2 跃迁, 且随着掺杂的Er³⁺ 和Yb³⁺ 离子浓度增加, 样品的上转换发光强度增加, 这是因为Yb³⁺ 离子和Er³⁺ 离子之间的能量传递效率增加引起的. 在0.5—0.8 W 功率激发下,样品属于双光子发射, 而在0.9—1.2 W 功率激发下样品具有新的上转换发光机理——光子雪崩效应. 探讨了Li⁺ 掺杂对Ba₅SiO₄Cl₆: Yb³⁺, Er³⁺ 样品的上转换发光性质的影响, Li⁺ 离子的掺杂引起Ba₅SiO₄Cl₆:Yb³⁺, Er³⁺ 上转换发光强度增加, 这是由于Li⁺ 离子的掺入降低了晶体场的对称性引起的.     

白光LED用Ba3SiO4Cl2∶Eu2+材料的光谱特性

采用高温固相法合成了Ba₃SiO₄Cl₂∶Eu2+蓝绿色荧光粉,并测量了材料的光谱特性等。研究结果显示,在365 nm近紫外光激发下,Ba₃SiO₄Cl₂∶Eu2+材料呈双峰宽带发射,主发射峰分别为445和510 nm;分别监测这两个发射峰,所得激发光谱覆盖范围为250～450 nm,主激发峰分别为350和400 nm,但光谱分布不同,说明两发射峰来源于不同的Eu2+发光中心。研究了Eu2+掺杂浓度对材料光谱性能的影响,发现随Eu2+掺杂量的增大,445 nm发射峰的强度增加,而510 nm发射峰的强度减弱。采用去离子水清洗Ba₃SiO₄Cl₂∶Eu2+材料后,445 nm发射峰消失,只保留了510 nm发射峰,且发射峰的强度明显减弱。     

Te/C coaxial nanocable as a supporting material for loading ultra-high density Pt nanoparticles at room temperature

We have developed a facile procedure to load ultra-high density Pt NPs with the size of about 3 nm on the surface of Te/C coaxial nanocable based on the -OH, -COOH hydrophilic groups on the carbon surface through directly mixing the Te/C coaxial nanocable, H₂PtCl₆, HCOOH and water at room temperature. Comparing with carbon nanotubes, the present procedure needed neither complex functionalization process nor any additional linkers. Notably, the amount of Pt NPs on the surface of coaxial nanocables could be easily controlled via changing the amount of Te/C coaxial nanocables in the mixture.     

磁约束电感耦合等离子体增强溅射沉积Co掺杂ZnO薄膜及其光学特性

采用磁约束电感耦合等离子体增强溅射法(ICP-PVD)在Si(100)和石英玻璃衬底上沉积了Zn_0.95Co_0.05O薄膜。XRD谱显示薄膜具有较强的(002)衍射峰,表明Zn_0.95Co_0.05O薄膜为c轴择优取向生长;透过光谱显示Zn_0.95Co_0.05O薄膜具有良好的透过性,其在可见光和红外波段的平均透过率大于80%,吸收光谱表明Co²⁺取代了Zn²⁺处于四配位晶体场中;喇曼光谱证明Zn_0.95Co_0.05O薄膜具有良好的六方纤锌矿结构;室温PL谱测量发现在可见光的蓝光波段和绿光波段存在较宽的发光带,却没有发现本征的近紫外光发射,这是由于Co掺杂后引入较多的缺陷导致的。     

Coaxial ZnO/SiO<Subscript>2</Subscript> nanocables fabricated by thermal evaporation/oxidation

ZnO/SiO₂ coaxial nanocables have been synthesized on silicon substrates by simply evaporating zinc powder under an argon and argon/oxygen mixed atmosphere sequentially. The diameters of these nanocables vary from 50 to 100 nm and the lengths up to several millimeters. Electron microscopy and chemical composition investigations reveal that the nanocable consists of a crystalline ZnO core surrounded by an amorphous silica sheath. The electron diffraction pattern proves that the long-axis direction of ZnO cores grows along the [0001] direction. Silica nanotubes with wall structures have been obtained by the selective dissolution of the cores with hydrochloric acid. PACS 81.10.Bk; 81.05.Hd     

Large-scale synthesis and photoluminescence properties of?SiC networks

By using a novel and low-cost microwave method, three-dimensional SiC networks have been synthesized in large-scale. The composition and structural features of the product were characterized by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. The results show that the SiC networks consist of nanocable X-junction and Y-junction. Some nanocables are composed of 3C–SiC multicore encapsulated in single amorphous SiO₂ shell. The SiC networks emitted stable violet–blue light around 380 nm under 325-nm excitation. Compared to the emission peak of the SiC networks after etched and the reported results of 3C–SiC nanowires, the emission peak of the SiC networks shows significant blueshift. The origin of the photoluminescence for the SiC networks could be due to two possible reasons: the central crystalline SiC nanowires and amorphous SiO₂ shell. A two-step growth mechanism of the SiC networks was proposed based on the experimental characterizations. The successful synthesis of SiC networks is an important step in the development of SiC-based electronic devices and circuits.     

Fabrication and annealing effects of SnO2/SiOx nanocables sheathed by the sputtering technique

We reported an approach, in which we have produced the nano-sized crystalline tin oxide (SnO₂) particles with rutile structure. SnO₂ nanowires were coated with a shell layer of SiO_x via a sputtering method. Transmission electron microscopy and elemental mapping investigations revealed that the nanostructures consisted of a crystalline SnO₂ core surrounded by an amorphous SiO_x sheath. The annealing effects on the core-shell nanowires were investigated, revealing that the outer surface became rougher by the thermal annealing. For core-shell nanowires, a room-temperature PL measurement with a Gaussian fitting showed yellow, blue, and violet light emission bands, with the relative intensity of the yellow band showing an increase after thermal annealing. Possible PL emission mechanisms are discussed. This study reveals that the sputtering is effective for preparing the shell layers of nanocables.     

Growth and characterization of type-II ZnO/ZnTe core-shell nanowire arrays for solar cell applications

Large area, well-aligned type-II ZnO/ZnTe core-shell nanowire arrays have been fabricated on an a-plane sapphire substrate. The ZnO nanowires were grown in a furnace by chemical vapor deposition with gold as catalyst and then were coated with a ZnTe shell on the ZnO nanowires surface by a metal-organic chemical deposition chamber. The morphology and size distribution of the ZnO/ZnTe core-shell nanowire arrays were studied by scanning electron microscopy (SEM) and the crystal structure was examined by x-ray diffraction (XRD). Transmission measurement was used to study the optical properties of the core-shell nanowires. The results indicated that the ZnO/ZnTe core-shell nanowire arrays have good crystalline quality. In addition, it was found that the nanowire arrays have good light absorption characteristics and these properties make it suitable for making photovoltaic devices.     

激发功率、退火温度及Tm3+浓度对Tm3+/Er3+/Yb3+三掺YF3粉末上转换发光性质的影响

用水热法合成了Tm³⁺/Er³⁺/Yb³⁺三掺杂YF₃上转换发光粉末,并对其进行了结构和形貌表征.对上转换发射谱的研究表明,在相对低激发功率下,可以观察到比较明亮的近白色发光,且随着激发功率的增大,上转换发射强度迅速增大并达到饱和状态,继续增大激发功率,出现发光猝灭现象.退火温度对上转换发射强度的影响表明,随着退火温度的升高,Tm³⁺,Er³⁺的所有特征发射峰均相对增强.上转换发射谱随Tm³⁺浓度变化关系表明,在相对低Tm³⁺掺杂浓度下,Tm³⁺-Er³⁺相互作用占优势,Tm³⁺把能量传递给Er³⁺,Er³⁺发射相对增强;在相对高掺杂浓度下,Tm³⁺-Tm³⁺之间交叉弛豫过程占优势,Er³⁺发射相对减弱.从实验结果看出,该粉末的上转换发光非常丰富,从紫外到红外均有发射,是一种潜在的白色上转换发光及三维固体显示材料.     

3,4-噻吩二羧酸、1,10-邻菲罗啉与稀土配合物的荧光性质及对硝基苯的检测

3,4-噻吩二羧酸(3,4-H₂tdc),1,10-邻菲罗啉(phen)和稀土硝酸盐经水热法合成三种配合物Ln₂(Htdc)₂(tdc)₂(phen)₂(H₂O)₄(Ln=Eu 1, Gd 2, Tb 3),并用X-射线单晶衍射分析方法测定了配合物1-3晶体结构,配合物1-3为双核分子。每个金属离子周围有2个3,4-tdc,1个3,4-Htdc,1个phen和2个配位水分子,配位数为9。配合物1和3在紫外灯下显强红光和绿光,其荧光发射光谱,在619和545 nm出现最大发射峰,分别对应于Eu(Ⅲ)离子的5D₀→7F₂和Tb(Ⅲ)离子的5D₄→7F₅跃迁。配合物2在425 nm观察到来自基于配体的π*→π最大发射峰。不同溶剂分子对配合物1荧光有不同程度的影响,基于荧光猝灭机理,配合物1具有选择性检测硝基苯污染物的能力。     

X-ray and electron spectroscopy investigation of the core-shell nanowires of ZnO:Mn

ZnO/ZnO:Mn core-shell nanowires were studied by means of X-ray absorption spectroscopy of the Mn K- and L_2,3-edges and electron energy loss spectroscopy of the O K-edge. The combination of conventional X-ray and nanofocused electron spectroscopies together with advanced theoretical analysis turned out to be fruitful for the clear identification of the Mn phase in the volume of the core-shell structures. Theoretical simulations of spectra, performed using the full-potential linear augmented plane wave approach, confirm that the shell of the nanowires, grown by the pulsed laser deposition method, is a real dilute magnetic semiconductor with Mn²⁺ atoms at the Zn sites, while the core is pure ZnO.