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磁约束电感耦合等离子体增强溅射沉积Co掺杂ZnO薄膜及其光学特性
引用本文:刘学超,施尔畏,陈之战,张华伟,宋力昕.磁约束电感耦合等离子体增强溅射沉积Co掺杂ZnO薄膜及其光学特性[J].发光学报,2006,27(6):953-957.
作者姓名:刘学超  施尔畏  陈之战  张华伟  宋力昕
作者单位:1. 中国科学院, 上海硅酸盐研究所, 上海, 200050;2. 中国科学院, 研究生院, 北京, 100049
基金项目:上海市纳米科技专项基金
摘    要:采用磁约束电感耦合等离子体增强溅射法(ICP-PVD)在Si(100)和石英玻璃衬底上沉积了Zn0.95Co0.05O薄膜。XRD谱显示薄膜具有较强的(002)衍射峰,表明Zn0.95Co0.05O薄膜为c轴择优取向生长;透过光谱显示Zn0.95Co0.05O薄膜具有良好的透过性,其在可见光和红外波段的平均透过率大于80%,吸收光谱表明Co2+取代了Zn2+处于四配位晶体场中;喇曼光谱证明Zn0.95Co0.05O薄膜具有良好的六方纤锌矿结构;室温PL谱测量发现在可见光的蓝光波段和绿光波段存在较宽的发光带,却没有发现本征的近紫外光发射,这是由于Co掺杂后引入较多的缺陷导致的。

关 键 词:ZnO薄膜  Co掺杂  溅射沉积  光学特性
文章编号:1000-7032(2006)06-0953-05
收稿时间:2005-12-20
修稿时间:2006-05-09

Optical Properties of Co-doped ZnO Film Prepared by Sputtering Deposition in a Magnetic Inductively Coupled Plasma
LIU Xue-chao,SHI Er-wei,CHEN Zhi-zhan,ZHANG Hua-wei,SONG Li-xin.Optical Properties of Co-doped ZnO Film Prepared by Sputtering Deposition in a Magnetic Inductively Coupled Plasma[J].Chinese Journal of Luminescence,2006,27(6):953-957.
Authors:LIU Xue-chao  SHI Er-wei  CHEN Zhi-zhan  ZHANG Hua-wei  SONG Li-xin
Institution:1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
Abstract:The semiconductor ZnO has grained substantial interests in the research community in part because of its wide direct band gap (3.3 eV) and large exciton binding energy (60 meV). It is a well-known piezoelectric and electro-optic material with potential applications such as optoelectronic and luminescent devices as well as chemical sensors. Even though the research focusing on ZnO goes back to several decades, one of the renewed interests is fueled by the observation of ferromagnetic behavior in transition metals doped ZnO which is called diluted magnetic semiconductors (DMS). DMS could be served as ideal material for exploiting spin in addition to charge in semiconductor devices. Much attention has been paid to the magnetic properties of ZnO-based DMS. In this paper we focused on the optical properties of Co-doped ZnO films. Highly (002) orientated Zn0.95Co0.05O films were deposited on Si (100) substrate using inductively coupled plasma enhanced physical vapor deposition (ICP-PVD) with magnetic confinement. X-ray diffraction pattern and typical Raman spectrum show that Zn0.95Co0.05O film has a wurtzite structure. Transmittance spectrum indicates that the Zn0.95Co0.05O film has an average transparency of over 80% in the visible and infrared wavelength. The band gap of Zn0.95Co0.05O film (3.11 eV) is less than that of pure ZnO, which is due to sp-d exchange interactions between the band electrons in ZnO and the localized d electrons of the Co2+ ions. Three obvious absorption peaks around 660, 615 and 560 nm are found. They are ascribed to derive from d-d transitions of tetrahedrally coordinated Co2+ and attributed to the 4A2(4F)→2E(2G), 4A2(4F)→4T1(4P), and 4A2(4F)→4A1(4G) transitions. The photoluminescence spectrum shows broad blue and green emission from the Zn0.95Co0.05O film at room temperature. On the other hand, no luminescence is found in the ultraviolet region near 380 nm.
Keywords:ZnO thin film  Co-doped  sputtering deposition  optical properties
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