化学气相沉积法制备Zn2GeO4纳米线及其发光性质的研究

利用化学气相沉积法（CVD），气-液-固（VLS）生长法则在表面溅有金属Au催化剂层的1 cm×1 cm的Si片上制备三元Zn₂GeO₄纳米线。X射线衍射仪（XRD）测试结果表明，锌源与锗源质量比为8：1时可成功制备出Zn₂GeO₄纳米结构；扫描电子显微镜（SEM）测试结果表明，Zn₂GeO₄纳米线直径为100 nm，长度为10~11 μm；光致发光（PL）测试结果表明，Zn₂GeO₄纳米线在432和480 nm处具有两个发光峰，最后对其生长机理进行了分析。

Zn2GeO4 nanowires prepared by chemical vapor deposition and its luminescence properties

Ternary Zn2 GeO4 nanowires were prepared by VLS law and the Chemical Vapor Deposition （CVD） method on 1 cm x 1 cm silicon wafer sputtered by metal Au catalyst. Zn2 GeO4 structure was obtained under the condition that the mass ratio of zinc source and germanium source was 8： lwt% as the X-ray diffraction（XRD） shown. The Scanning Electron Microscopy （SEM） result showed that the diameter of the nanowires was 100 nm and the length was approximately 10 -11 μm. The photoluminescence（PL） spectra showed two emis- sion peaks at 432 nm and 480 nm, respectively. Finally, the growth mechanism of the Zn2GeO4 nanowires was analyzed.