磁性多层膜CoFeB/Ni的垂直磁各向异性研究

应用磁控溅射法在玻璃基片上制备了以Pt为底层的CoFeB/Ni多层膜结构样品,通过测试样品的反常霍尔效应研究多层膜的垂直磁各向异性(perpendicular magnetic anisotropy,PMA),对影响多层膜垂直磁各向异性的各因素进行了调制.实验结果表明,多层膜的底层厚度、周期层中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要影响.通过对样品各参数的逐步调制,最终获得了具有良好PMA的CoFeB/Ni多层膜最佳样品Pt(4)/[CoFeB(0.4)/Ni(0.3)]_3/Pt(1.0).经测试计算,该样品的各向异性常数K_(eff)为2.2×10~6erg/cm~3(1 erg/cm~3=10~(-1)J/m~3),具有良好的PMA性能,样品总厚度为7.1 nm,完全满足制备垂直磁结构材料的厚度要求,可进一步研究其在器件中的集成与应用.     

垂直场下磁性薄膜中的铁磁共振现象

将铁磁共振频率看成外磁场的函数, 讨论了垂直场下磁性膜中的铁磁共振现象. 结果显示: 当外磁场平行于膜面, 并考虑磁膜具有垂直磁晶各向异性情形时, 其磁共振频率随外磁场的变化分为高频支和低频支两种情况, 具体的依赖关系取决于磁膜内磁晶的各向异性; 当外磁场垂直于膜面, 其磁共振频率随外磁场的关系仅存在一支, 一般地, 磁共振频率随外磁场的增加单调地非线性减小, 但当立方磁晶各向异性场H_k1 与单轴磁晶各向异性场H_a之比值介于2/3 < H_k1/H_a <1时, 其磁共振频率随外磁场的增加单调增加, 这与相关的实验结果一致. 研究结果表明: 磁薄膜中有无垂直于膜面的磁各向异性可以通过其磁共振谱的测量进行辨析.     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

碱金属Li,Na,K,Rb,Cs,Fr的ns2S1/2,np2P1/2,3/2, nd2D3/2,5/2 和nf2F5/2,7/2 里德伯能级理论研究

本文在多通道量子数亏损理论(MQDT)框架下,利用相对论多通道理论(RMCT),分别在冻结实近似、 考虑Δl=-1的偶极极化效应、Δl=+1的偶极极化效应、Δl=± 1的偶极极化效应、伸缩模效应以及同时考虑偶极极化效应和伸缩模效应等不同层次近似下,系统地计算了碱金属Li, Na, K, Rb, Cs和Fr七个里德伯系列的能级,即ns²S_1/2, np²P_1/2, np²P_3/2, nd²D_3/2, nd²D_5/2, nf²F_5/2 和nf²F_7/2.计算结果表明,电子关联效应对碱金属原子的里德伯能级的影响很大.总的来说,偶极极化效应比伸缩模效应重要,而在偶极极化效应中, Δl = + 1的偶极极化效应比Δl = - 1的偶极极化效应重要.但对于Na的ns²S_1/2,(nd²D_3/2,nd²D_5/2)里德伯系列的能级,和Li的(np²P_1/2,np²P_3/2)里德伯系列的能级,是伸缩模效应比较重要.     

TiGen-(n=7~12)团簇的光电子能谱及密度泛函理论研究

利用光电子能谱及密度泛函理论计算对TiGe_n^-(n=7~12)团簇的几何结构及电子特性等进行了系统研究. 对于TiGe_n^-负离子及中性TiGe_n,在n=8时出现了钛原子半内嵌的船型结构;在n=9~11时,新增的锗原子加盖到这种船型结构上,逐步形成钛原子完全内嵌的结构. TiGe₁₂^- 团簇具有一种钛原子内嵌的变形六棱柱结构. 自然布居分析结果显示,对于n=8~12的TiGe_n^-/0 团簇,随着内嵌结构的形成,有电子从锗原子转移到钛原子,说明其电荷转移方式与结构演变密切相关.     

多层膜外退火方法制备MgB2超导薄膜

报道了利用电子束蒸发的Mg/B多层膜作为前驱体，然后退火制备MgB₂薄膜的工作. 实验中发现，采用翻转膜面的退火处理方式可以有效地避免降温过程中Mg蒸气在薄膜表面形成的颗粒凝结，由此稳定地实现了面积为10 mm×10 mm，均匀、平整的超导薄膜的制备，T_c达35 K，转变宽度为0.8 K，在5 μm×5 μm的区域内薄膜的平均粗糙度小于10 nm. 为了便于后续器件制作过程中的微加工工艺，研究了膜厚小于1000 ?时薄膜的成相规律，发现当样品厚度减薄后，T_c会有明显降低. 通过调整前驱薄膜中的不同分层厚度，仍可实现转变温度达30 K以上、厚度约600 ?的MgB₂薄膜，在20 K时的临界电流密度为2.4×10⁶ A/cm².     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)n/FeMn多层膜.研究结果表明,多层膜的垂直交换偏置场Hex和反铁磁层厚度的关系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期数的增加,垂直交换偏置场Hex相应减小,并且与铁磁层的调制周期数近似成反比关系.(Pt/Co)3/FeMn的垂直交换偏置场Hex已经达到22.3kA/m.为了进一步提高Hex,在Co/FeMn的界面插入Pt层,当Pt层厚度为0.4nm时,Hex达到最大值39.8kA/m.     

Pt插层对铁磁/反铁磁界面交换耦合的影响

在铁磁层(FM)/反铁磁层(FeMn)耦合体系中插入Pt 插层或对靠近FM/FeMn界面处的FeMn掺杂Pt元素,研究了体系的交换偏置场 H_ex及矫顽力H_c随Pt插层深度 d_Pt与Pt掺杂层厚度t_PtFeMn的变化关系. 实验结果表明,引入Pt插层后NiFe/FeMn(d_Pt)/Pt/FeMn体系的未补偿磁矩(UCS)的数量得到很大的提高,从而对H_ex与H_c 起到增强的作用; 同时, 从实验结果可以推测FeMn层内部UCS的分布深度约为1.3 nm. 另外,对靠近FM/FeMn界面处的FeMn掺杂Pt元素,发现掺入Pt元素后体系的H_ex 得到有效增强, 这是因为掺入Pt元素后体系UCS的数量也得到很大的提高.     

光子晶体缺陷模的带宽与品质因子研究

利用光学传输矩阵法研究了结构参量对缺陷态光子晶体的缺陷模带宽和品质因子的影响.研究发现,当缺陷介质层厚度h₀的值较小时,缺陷模的带宽很小且基本保持不变;当h₀较大时,缺陷模的带宽随h₀的增加而快速增加.另外发现,缺陷模的品质因子在某个h₀处取最大值.但是总体上看,h₀较小时的品质因子要远大于h₀较大时的品质因子.此外,缺陷模的品质因子随光子晶体的周期数增加而急剧增加约4.788倍,而带宽则随周期数的增加而急剧减少约4.788倍.当周期数为13时就可以获得10⁹以上的品质因子值和小于10^-9的相对带宽值.     

Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented.The samples show strong perpendicular magnetic anisotropy(PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm.The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm~3 and 3.75 erg/cm~2,respectively.The magnetic dead layer(MDL) is about 0.23 nm in this system.Furthermore,strong capping layer thickness dependence is also observed.The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm.To maintain PMA,the metal layer could not be too thin or thick in these multilayers.The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.     

Ultrathin (CoFe/Pt)n multilayers with tuned magnetic properties

Perpendicular magnetic anisotropy (PMA) has been investigated in ultrathin (CoFe [0.2] nm/Pt [0.2] nm)_n multilayers. The Pt layers show an fcc crystal structure with a preferred [111] orientation. The multilayers with n=3, 4 show PMA in the as-grown state, which can be enhanced by thermal annealing. However, no PMA is observed in the as-grown state with higher repetitions (n>&=5), although it is observed after thermal annealing. For 1=&<n=&<8, the anisotropy energy is around 10⁵ J/m³ for all (CoFe [0.2]/Pt [0.2])_n stacks. The perpendicular anisotropy is related to layer thickness and interface roughness.     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

Anomalous Hall effect in perpendicular CoFeB thin films

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.     

Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers

The dependence of perpendicular magnetic anisotropy(PMA) on the barrier layer MgO thickness in MgO/CoFeB/Ta multilayers is investigated.The results show that the strongest PMA occurs in a small window of about2-4nm with the increase of MgO thickness from l-10 nm.The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers.Moreover,the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8nm,respectively,and both the samples show PMA.These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.     

CoFeB/AlOx/Ta及AlOx/CoFeB/Ta结构中垂直易磁化效应的研究

本文详细研究了在不同氧化层和铁磁层厚度情况下, 底层CoFeB/AlO_x/Ta结构和 顶层AlO_x/CoFeB/Ta结构中的垂直磁各向异性. 在底层CoFeB/AlO_x/Ta结构中观察到了垂直磁化的磁滞回线, 证明了其垂直易磁化效应的存在; 而在顶层AlO_x/CoFeB/Ta结构中却没有观察到类似的磁滞回线. 对这种对称结构中的非对称现象进行了分析. 研究还发现不同的氧化层和铁磁层厚度均会影响层间界面相互作用的强度, 从而导致结构的垂直磁化曲线矫顽力大小发生改变. 这项研究将对基于AlO_x氧化层垂直磁隧道结的研制具有重要的意义. 关键词： 垂直磁各向异性 磁隧道结 随机存储器     

过量B的Ta/CoFeB/MgO薄膜垂直各向异性和温度稳定性的增强

以CoFeB/MgO为核心单元的垂直各向异性薄膜体系和相关的垂直磁隧道结已获得广泛研究,其中CoFeB的B含量基本都保持为原子比20%.本文采用磁控溅射制备了Ta/(Co0.5Fe0.5)1-xBx/MgO三明治结构及生长顺序相反的系列薄膜,并在573—623K进行真空退火,研究了样品垂直各向异性随B成分的变化.结果显示,当B含量减小到10%时,Ta/CoFeB/MgO体系的垂直各向异性明显降低;相反,当B含量增加至30%时,该体系的垂直各向异性明显增强;发现在高B含量的情形下,样品的垂直各向异性大小与温度稳定性均与三明治结构的生长顺序密切相关;获得了具有优异温度稳定性的垂直磁化MgO/CoFeB/Ta样品.结果表明适当增加B含量是增强CoFeB/MgO体系垂直各向异性和温度稳定性的有效途径之一.     

Thickness-dependent magnetic properties in Pt/[Co/Ni]n multilayers with perpendicular magnetic anisotropy

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co($t_{\rm Co}$)/Ni($t_{\rm Ni}$)]$_{5}$/Pt(1 nm) multilayers by combining the four standard magnetic characterization techniques. The magnetic-related hysteresis loops obtained from the field-dependent magnetization $M$ and anomalous Hall resistivity (AHR) $\rho_{{xy}}$ showed that the two serial multilayers with $t_{\rm Co} = 0.2$ nm and 0.3 nm have the optimum PMA coefficient $K_{\rm U}$ as well as the highest coercivity $H_{\rm C}$ at the Ni thickness $t_{\rm Ni}= 0.6 $ nm. Additionally, the magnetic domain structures obtained by magneto-optic Kerr effect (MOKE) microscopy also significantly depend on the thickness and $K_{\rm U}$ of the films. Furthermore, the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to $K_{\rm U}$ and $H_{\rm C}$, indicating that inhomogeneous magnetic properties dominate the linewidth. However, the intrinsic Gilbert damping constant determined by a linear fitting of the frequency-dependent linewidth does not depend on the Ni thickness and $K_{\rm U}$. Our results could help promote the PMA [Co/Ni] multilayer applications in various spintronic and spin-orbitronic devices.     

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]₂multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.