聚四氟乙烯薄膜的制备及其红外光谱研究

用射频磁控溅射方法分别在NaCl和Si基底上制备了聚四氟乙烯薄膜．通过红外吸收光谱的研究分析了薄膜中的成分及分子链结构． 关键词：     

CLUSTER NUCLEATION LIMITED BY GROWTH PATTERN COVERAGE IN THIN FILM PREPARATION FROM VAPOR

In the early stage of thin film preparation from vapor, growth patterns consisting of stable clusters will gradually cover almost the entire substrate surface. During this process, the density of single atoms is zero on growth patterns and the nucleation of clusters will proceed in the substrate parts uncovered by these patterns. The influence of growth pattern coverage on the nucleation of thin films has not been considered wholly in the classical theory of thin films. We will systematically study the influence of growth pattern coverage and give some correction formulas for the widely used classical theory of thin films. It was found that the classical nucleation rate is proportional to the square of the uncovered area. The corrected formulas are of particular importance in the dominant coverage case.     

EFFECT OF TEMPERATURE ON ELECTRICAL RESISTIVITY OF A HYDROGENATED LaNi5 THIN FILM

The electrical resistivity of a hydrogenated LaNi₅ thin film has been investigated as a function of temperature in vacuum and in hydrogen. While the film was heated in vacuum for the first time, the change in resistivity exhibited different characteristics during different ranges of temperatures due to the competition of two effects owing to the lattice scattering of conductive electrons and the number of them. The resistivity had a sharp drop near 600 K, which originates from the formation of high conducting lanthanum hydride and nickel due to a reaction between the dissolved hydrogen and LaNi₅. The change in resistivity was not repeatable during the successive heating and cooling processes. When the film was heated under a hydrogen atmosphere, a drop in resistivity occurred near 700 K due to the reaction between LaNi₅ and the hydrogen atmosphere. The film showed a linear temperature dependence of receptivity with completeness of the reaction. It was found that the reaction was irreversible. The film lost the ability of hydrogen absorption after the reaction, and it had a phase change from LaNi₅ to LaH and Ni. This result was supported by X-ray diffraction patterns.     

Mo覆盖层对MgO/CoFeB/Mo结构磁各向异性的影响

研究了Mo覆盖层厚度对MgO/CoFeB结构磁各向异性的影响. 研究发现, 加平行磁场生长出来的MgO/CoFeB/Mo样品表现为面内各向异性, 并且随着CoFeB的厚度减小, 面内各向异性逐渐减弱; 在CoFeB厚度减小到1.1 nm时, 仍可以保持面内各向异性, 垂直方向的外加饱和场逐渐减少; 厚度在0.9 nm及以下的情况下, 面内各向异性消失. 改变Mo覆盖层厚度, 当t_Mo= 1.6 nm时, 垂直方向的饱和场最小. 当生长过程的磁场变为垂直磁场时, 不同厚度的Mo覆盖层对MgO/CoFeB 的磁各向异性影响不同. Mo厚度在1 nm及以下时MgO/CoFeB/Mo样品表现为面内各向异性, Mo覆盖层厚度在1.2和5 nm之间时样品出现了垂直磁各向异性; 并且垂直方向的矫顽力也发生了变化, Mo覆盖层厚度为1.4 nm时样品的磁滞损耗会大一些.     

Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented.The samples show strong perpendicular magnetic anisotropy(PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm.The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm~3 and 3.75 erg/cm~2,respectively.The magnetic dead layer(MDL) is about 0.23 nm in this system.Furthermore,strong capping layer thickness dependence is also observed.The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm.To maintain PMA,the metal layer could not be too thin or thick in these multilayers.The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.     

镶嵌在SiO2薄膜中InAs纳米颗粒的Raman散射

对镶嵌在SiO2 薄膜中纳米InAs颗粒的Raman散射谱进行了研究 .与大块InAs晶体相比 ,InAs纳米颗粒的Raman散射谱具有相似的特征 ,即由纵光学声子模和横光学声子模组成 ,但是散射峰宽化并红移 .用声子限域效应解释了散射峰的红移现象 ,并结合InAs纳米颗粒的应力效应解释了红移量与理论值的差异 .     

EFFECT OF TEMPERATURE ON ELECTRICAL RESISTIVITY OF A HYDROGENATED LaNi5 THIN FILM

The electrical resistivity of a hydrogenated LaNi₅ thin film has been investigated as a function of temperature in vacuum and in hydrogen. While the film was heated in vacuum for the first time, the change in resistivity exhibited different characteristics during different ranges of temperatures due to the competition of two effects owing to the lattice scattering of conductive electrons and the number of them. The resistivity had a sharp drop near 600 K, which originates from the formation of high conducting lanthanum hydride and nickel due to a reaction between the dissolved hydrogen and LaNi₅. The change in resistivity was not repeatable during the successive heating and cooling processes. When the film was heated under a hydrogen atmosphere, a drop in resistivity occurred near 700 K due to the reaction between LaNi₅ and the hydrogen atmosphere. The film showed a linear temperature dependence of receptivity with completeness of the reaction. It was found that the reaction was irreversible. The film lost the ability of hydrogen absorption after the reaction, and it had a phase change from LaNi₅ to LaH and Ni. This result was supported by X-ray diffraction patterns.     

Fabrication of Nano-Columnar Tungsten Films and Their Deuterium and Helium Ion Irradiation Effects

Nuclear fusion energy for electricity generation is drawing significant attention, due to the fact that it is a clean, safe, and environmentally friendly energy source. The plasma facing material （PFM） is one of the key factors that determine the development of fu- sion reactors. The fusion energy system requires ex- cellent performance of PFMs under high heat flux de- position and particles irradiation. PFMs not only are exposed to unprecedented steady-state and tran- sient power fluxes, but also are bombarded with un- precedented neutron fluxes. In nuclear fusion reactors, the PFM suffers from high-energy （14MeV） neutron irradiation and a high heat flux of ～10MW/m2. A variety of point defects （e.g., interstitials, vacan- cies, helium, and hydrogen gas atoms） are produced in the process of irradiation through atomic displace- ment and nuclear transformation. These point defects form defect clusters （e.g., voids and interstitial loops） and thus change the mechanical properties and mi- crostructure of the material even to the extent that their structural integrity is compromised.     

离子镀制备Cr/W混合过渡层的氢氘辐照效应研究

用双离子束镀膜方法在W基底表面制备不同厚度的Cr薄膜. 用冷场扫描电镜能谱分析仪对镀膜样品成分深度分布进行分析, 使用重离子加速器对镀膜样品进行高能、低束流的氢或氘辐照, 用扫描电镜对样品表面形貌变化进行分析, 运用粒子注入射程模拟软件SRIM对氢粒子在Cr/W双层块体中的射程进行模拟分析. 实验结果表明, 运用双离子束镀膜法能够在膜与基底的接触面区域制得Cr/W混合过渡层; 在高能、低束流的氢或氘辐照下, Cr/W混合过渡层易于使气体滞留而起泡, 双离子束制备的Cr膜层不易聚集氢或氘气体成泡.     

镶嵌在SiO2薄膜中InAs纳米颗粒的Raman散射

对镶嵌在SiO₂薄膜中纳米InAs颗粒的Raman散射谱进行了研究.与大块InAs晶体相比,InAs纳米颗粒的Raman散射谱具有相似的特征,即由纵光学声子模和横光学声子模组成,但是散射峰宽化并红移.用声子限域效应解释了散射峰的红移现象,并结合InAs纳米颗粒的应力效应解释了红移量与理论值的差异. 关键词： 2薄膜')" href="#">SiO₂薄膜 InAs量子点 Raman散射