单光子探测器APD无源抑制特性研究

为了选择高性能单光子探测器件，采用无源抑制方法对工作在盖革模式下的雪崩光电二极管（APD: avalanche photodiode）特性进行了测量。利用APD两端的电压在雪崩后趋于稳定的特性，获得了一种确定暗击穿电压的方法。特性测量实验结果表明：降低温度能加宽APD的最佳工作区域范围，并提高最佳增益值，从而使APD具有更高的灵敏度。通过对EG&;G系列APD和外延APD暗电流和信噪比特性进行比较，发现外延 APD具有良好的噪声性能和信噪比性能，适用于单光子探测。     

基于雪崩光电二极管的弱光探测技术研究

通过采用无源抑制方法对雪崩光电二极管的弱光探测技术进行了研究,分析了工作在盖革模式下的InGaAs APD的特性。利用APD两端的偏置电压VB在其雪崩后趋于稳定的特性,确定了其雪崩暗击穿电压,并且在水冷温控系统中,测得了APD雪崩暗击穿电压与温度的关系。结果表明,APD的雪崩暗击穿电压随着温度的上升而增大,光子群(弱光)到达时,APD探测到的在某一幅值处的脉冲数明显增加,其脉冲幅度也将增大。     

单光子探测器雪崩光电二极管的低温控制系统及其温度特性

根据单光子探测系统的要求及其特点,采用半导体制冷技术,研制出了用于单光子探测的雪崩光电二极管(APD)的水循环散热制冷腔。通过配备测量精度为0.1℃的温控仪,降低了APD的工作环境温度。通过实验探讨了APD的温度特性,得到了APD的雪崩电压、暗电流、光电流、等效噪声功率与温度的关系。结果表明:降低APD的工作温度有利于减小APD的等效噪声功率,APD存在最佳工作温度。     

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为了检测到散射信号且有较高的信噪比,使用硅雪崩二极管(APD)探测器探测汤姆逊散射光,采用电荷敏感运算放大器减小电子噪声。同时,设计了放大电路,并采取了一些抗干扰措施。在实验中,此激光汤姆逊散射系统成功地测量出HT-7等离子体的电子温度。     

红外探测器TPS434低温、磁场性能研究

以商用高灵敏度红外探测器TPS434为研究对象,测量了其灵敏度随温度(280～10 K)、辐射的调制频率、磁场变化(0～6 T)的相关信息。从实验结果得到：TPS434的灵敏度随着温度降低而降低,随辐射的调制频率增加而衰减,但是低温下的衰减速率变缓,说明探测器的弛豫时间变短;热电堆的温差电动势在低温下会随磁场发生线性变化,可以通过线性拟合扣除磁场对测量结果的影响。由实验所得数据估算等效噪声功率NEP以及最小可检测功率Pmin,对TPS434作为THz探测器的可行性进行了分析。     

高精度光谱辐射标准探测器的温度特性研究

高精度辐射定标技术是现代空间遥感的主要支撑技术之一。基于滤光片辐射计的新型光辐射标准探测器在野外、机载和星上高精度辐射定标中具有广阔的应用前景。温度特性是工程应用中影响标准探测器绝对精度和稳定性的一项关键因素。在20～60℃的宽温度范围内,对基于硅陷阱探测器的滤光片辐射计温度特性进行了系统测试和定量研究,在所获取的完备的实验数据基础上设计并研制了一套精密温控系统。实验结果显示在加入精密温控后,滤光片辐射计的温度系数降低了约一个数量级,从而有利于在不同温度工作平台上保持标准探测器的高精度。     

集成光学电场探头测量HEMP的系统误差分析

讨论了集成光学电场探头测量高空电磁脉冲(HEMP)的系统误差。根据探测器传输函数和HEMP的表达式得出了误差方程。并通过对HEMP表达式的特征分析,对误差方程进行了简化。通过方程的求解,分析了探测器和HEMP波形的各项参数对测量结果的影响。结果表明:误差随着双指数波幅值、半宽/前沿和探测器工作点漂移的增大而增大;探测器的5%和10%系统测量误差对应的最大测量幅值分别为半波电场的0.165倍和0.23倍。该结论可为此类探测器的使用提供参考。     

激光位置探测器的角位移测量精度分析

作为激光光斑位置探测器,象限探测器和位敏探测器被广泛应用于激光光斑跟踪、监控、位置检测和定位等领域。对这两种探测器的角位置测量精度进行了探讨,分析了影响精度的主要噪声源,推导出两者的角位移精度表达式,并通过计算进行了模拟。结果显示,两者的测量精度决定于信号的信噪比,且随作用距离的增加而降低;象限探测器的角位移测量精度明显高于位敏探测器。在忽略背景光噪声的情况下,象限探测器的精度约为位敏探测器的40倍。     

星载差分吸收光谱仪噪声分析及处理方法

噪声对星载大气痕量气体差分吸收光谱仪信噪比具有重大影响,其是衡量光谱仪成像质量和痕量气体反演能力的标准。为量化并去除光谱仪系统噪声从而提高信噪比,分析了光谱仪噪声来源并给出了相应噪声模型,在此基础上建立了光谱仪信噪比模型。研究了入射光强度、积分时间和系统增益对系统信噪比的影响。通过光谱仪辐射定标试验数据对不同工作模式和不同参数与信噪比的关系进行了对比验证。并提出主要系统噪声的处理方法：利用线性拟合取截距法确定系统偏置噪声;在地面利用暗电流温度相关性获得温度修正因子实现载荷在轨暗电流校正;在探测器响应线性范围内利用两点校正法对PRNU噪声进行修正。结果表明：全幅成像模式下,可见1通道电子学偏置噪声响应DN值2 625,可见2通道电子学偏置噪声响应DN值2 763;暗电流噪声在CCD成像面温度高于0 ℃时占主要部分,温度下降至-20 ℃时其余噪声起主导作用,验证了CCD最佳制冷温度;光谱仪信噪比随着入射光响应和积分时间的增加而增大,系统增益不会影响信噪比;PRNU噪声通过校正得到明显改善,由3.32%下降到0.47%,提高了光谱仪成像质量。该噪声分析和处理方法对后期光谱数据的痕量气体反演提供帮助。     

低噪声不隔直光电探测电路的设计

光电探测电路是光纤通信和光电检测系统中光信号转换成电信号的关键部分,但现有光电探测器大都不能同时测量脉冲光信号与直流光信号。为了获得低噪声并且能够同时测量脉冲光信号和直流光信号的光电探测器,设计一个不隔直光电探测电路,采用平衡放大方式消除直流工作点不稳定问题,提出了一种利用谐波分析法测量光电探测电路带宽的方法;同时对影响噪声的各种因素进行了研究,计算了探测电路的噪声电压和电流,提出了利用降低温度的方法提高信噪比。结果表明了该方法的有效性。     

量子通信中单光子探测器的实验研究

为了提高单光子探测系统的灵敏度,实验采用InGaAs/InP雪崩光电二极管作为量子通信中的单光子探测器件,以门控脉冲模式实现了更高精度的单光子探测器的偏压生成电路、单光子信号放大电路、单光子信号检测电路和温度控制模块,并通过选用高精度前置放大器OP37和精密比较器AD8561,将量子效率提高到18.3%,暗计数控制小于4.1%×10~(-6)/ns.     

Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

Solar-blind ultraviolet detection is of great importance in astronomy and industrial and military applications.Here, we report enhanced solar-blind ultraviolet single-photon detection by a normal silicon avalanche photodiode(Si APD) single-photon detector with a specially designed photon-collecting device. By re-focusing the reflected photon from the Si chip surface on the detection area by the aluminum-coated hemisphere, the detection efficiency of the Si APD at 280 nm can be improved to 4.62%. This system has the potential for high-efficiency photon detection in the solar-blind ultraviolet regime with low noise.     

基于Gm-APD的成像激光雷达目标探测特性

针对采用盖革模式雪崩光电二极管（Gm-APD）作为探测器的成像激光雷达,介绍了其测距原理及3D成像原理,并对如何提高其探测性能的方法进行了分析。以分析Gm-APD触发信号的统计特性为基础,对出现在距离门内不同位置目标的探测概率和虚警概率进行了研究与仿真,结果表明,目标处在距离门最前面时,探测概率受噪声水平影响最小,虚警概率受信号强度影响最大;目标靠近距离门中间位置时,探测概率随噪声水平增大下降缓慢,虚警概率随信号强度增大下降缓慢;目标处在距离门末尾时探测概率受噪声水平影响最大,而虚警概率几乎与回波信号强度无关。     

Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge,Si and GaAs

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kanedaet al. Supported by National Science Council, the Republic of China     

Simple approach to predict APD/PMT lidar detector performance under sky background using dimensionless parametrization

In this paper, we developed a simple approach to predict the APD/PMT (avalanche photodiode/photomultiplier) lidar detector performance in the presence of residual skylight background. By normalizing all relevant photodetector noise sources to the quantum noise, we obtain quantitative expressions for the degradation of the signal-to-noise ratio (SNR), the increasing threshold sensitivity of and decreasing lidar operation range. To apply the formalism to any lidar photodetectors operating in the ultra violet, visible and near-infrared spectral regions and to perform a comparative analysis of PMT and APD capabilities as the best photodetectors for ultra-violet (UV), visible (Vis) and near infra-red (NIR) lidar, we utilize a set of spectral characteristics that are built from an envelope of individual PMT and APD component responses. On this basis, the general analysis of system performance under intense background conditions is developed, and practical recommendations on detector use for each spectral region are given. The dimensionless formalism and the generalized detector spectral models used allows our analysis to be applied to nearly any lidar receiver operating over very different signal/background situations.     

Temperature Effects of CsI(Tl) Crystal Detector with APD Readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/℃ in the region from －2℃ to 8℃, and by 0.33%/℃ in the region from 8℃ to 25℃, while the gain of the tested APD decreases by －3.68%/℃ (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV γ ray from ¹³⁷Cs radiation source.     

Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge,Si and GaAs

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes. The temperature coefficient of avalanche breakdown voltage in a high field region is studied. Finally the response time of a PIN APD in these materials is discussed.This paper is supported by the National Science Council, the Republic of China.