45°高反膜中节瘤缺陷的电场增强效应及损伤特性

研究设计和制备了中心波长为1064 nm的45°多层膜反射镜,通过数值仿真结合实验,对薄膜中节瘤缺陷引起的电场增强效应及其对薄膜抗激光损伤性能的影响进行了研究。结果表明:当1064 nm激光从右至左45°斜入射时,电场增强效应主要出现在节瘤缺陷的表层及其左侧轮廓中部,电场增强效应随节瘤缺陷尺寸增大而增强。实验上,在清洁的基板表面喷布单分散SiO2微球作为人工节瘤种子,采用电子束蒸发制备法完成多层全反膜的制备,采用R-on-1方式对薄膜样品进行激光损伤测试。结果表明,薄膜的损伤阈值随着节瘤缺陷尺寸增加而减小。通过综合分析电场增强效应、薄膜损伤测试结果及损伤形貌特征得出,薄膜损伤阈值降低是由于节瘤缺陷和薄膜中微缺陷共同作用的结果。     

532 nm激光辐照下ZnSe薄膜光学特性研究

采用电子束热蒸发技术制备了ZnSe薄膜,研究了532 nm波长的不同能量(2.0 mJ、2.5 mJ、3.0 mJ)、不同脉冲数(3、10、15)激光诱导前后,ZnSe薄膜的透射率、折射率、消光系数、损伤阈值(LIDT)的变迁。研究结果显示,在能量为2.0 mJ激光辐照后,ZnSe薄膜折射率提高,透射率下降。相比较能量为2.5 mJ、3.0 mJ激光辐照,在能量为2.0 mJ激光辐照后折射率提高最明显,由2.489 4提高到2.501 6。薄膜损伤阈值从0.99 J/cm2提高到1.39 J/cm2(10脉冲辐照);薄膜的损伤经过了无损伤到严重损伤突变的损伤演变过程。采用原子力显微镜对预处理后薄膜表面粗糙度进行检测,发现激光预处理后的薄膜表面粗糙度Ra有所下降,从0.563 nm降低到0.490 nm(15脉冲激光辐照)。     

HfO_2/SiO_2高反射膜的缺陷及其激光损伤

用原子力、Normaski和扫描电子显微镜等分析仪器 ,对高损伤阈值薄膜常采用的 Hf O2 /Si O2 薄膜进行了表面显微图象研究 ,分析了薄膜常见的表面缺陷 ,如节瘤 ,孔洞和划痕等。薄膜表面缺陷的激光损伤实验表明 ,不同缺陷的抗激光损伤能力大不相同 ,节瘤缺陷最低 ,约为 1 5 J/ cm2 ,薄膜的损伤阈值主要由其决定 ,孔洞的激光损伤能力与节瘤相比较高 ,约为节瘤的 2～ 3倍。节瘤缺陷在低能量密度的激光损伤所形成的孔洞 ,与镀制过程中形成的孔洞形貌相似 ,激光再损伤能力也相似。低能量密度的激光把节瘤缺陷变为孔洞缺陷是激光预处理提高薄膜损伤阈值的原因之一     

1064 nm和532 nm纳秒激光同时辐照熔石英损伤规律的研究

利用Nd: YAG激光器研究基频(1064 nm)与倍频(532 nm)单独辐照和同时辐照下熔石英的损伤规律,对损伤几率进行了测试,获得损伤几率曲线与典型损伤形貌。研究结果表明:双波长同时辐照下的初始损伤阈值总是小于单波长辐照下的初始损伤阈值;基频光中加入定量倍频光后,熔石英对基频光的吸收效率提高;并且双波长同时辐照下,熔石英损伤密度增大;原因主要是熔石英表面缺陷对不同波长吸收机制的差异。     

HfO2／SiO2高反射膜的缺陷及其激光损伤

用原子力、Normaski和扫描电子显微镜等分析仪器,对高损伤阈值薄膜常采用HfO2/SiO2薄膜进行了表面显微图象研究,分析了薄膜常见的表面缺陷,如节瘤,孔洞和划痕等。薄膜表面缺陷的激光损伤实验表明,不同缺陷的抗激光损伤能力不大相同。节瘤缺陷最低,约为15J/cm^2,薄膜的损伤阈值主要由其决定,孔洞的激光损伤能力与节瘤相比较高,约为节瘤的2－3倍。节瘤缺陷在低能量密度的激光损伤所形成的孔洞,与镀制过程中形成的孔洞形貌相似,激光再损伤能力也相似。低能量密度的激光把瘤缺陷变为孔洞缺陷是激光预处理提高薄膜损伤阈值的原因之一。     

HfO_2单层膜的吸收和激光损伤阈值测试

薄膜吸收是降低膜层激光损伤阈值的重要原因,为了研究薄膜吸收对激光损伤阈值的影响,对HfO2单层膜在1 064 nm处的吸收及其在不同波长激光辐照下的损伤阈值进行了测试和分析。研究结果表明:薄膜的激光损伤阈值由薄膜吸收平均值(决定于薄膜中缺陷的种类和数量)和吸收均匀性(决定于薄膜中缺陷的分布)共同决定;根据HfO2单层膜在1064 nm波长处的吸收值,不但可以定性判断薄膜在1 064 nm波长,而且还可以判断在其它波长激光辐照下的抗激光损伤能力。     

1 064 nm与532 nm激光对电子束蒸发制备的HfO2/SiO2高反膜损伤比较

 研究了电子束蒸发制备的HfO₂/SiO₂高反膜在1 064 nm与532 nm激光辐照下的损伤行为。基频激光辐照时损伤形貌主要为节瘤缺陷喷溅留下的锥形坑,当能量密度较大时出现分层剥落;二倍频激光损伤主要是由电子缺陷引起的平底坑,辐照脉冲能量密度稍高时也会产生吸收性缺陷引起的锥形坑,但电子缺陷的损伤阈值更低;随着辐照脉冲能量密度的增大分层剥落逐渐成为主要的损伤形貌。分析认为,辐照激光波长的变化,引起吸收机制的变化从而导致了损伤阈值及损伤机制的差异。     

多脉冲激光作用下光学薄膜损伤的累积效应

研究了高反射膜在多脉冲激光作用下损伤的累积效应.实验中使用1064nm调Q的Nd∶YAG激光器，脉宽是12 ns，频率为10 Hz.实验发现:高反射膜的损伤阈值随辐照脉冲数增加而降低，表现出明显的累积效应.通过对损伤阈值和损伤概率以及辐照次数的统计性研究，并结合单脉冲辐照的结果，说明了存在于薄膜中微小的缺陷参与了多脉冲激光对薄膜的损伤过程,得到了制备IBS高反射膜的损伤阈值和照射次数的关系式，用Nomarski偏光显微镜观察了实验过程中样品的损伤形貌，发现是典型的缺陷损伤.     

钛酸镧薄膜在1064nm/532nm波长激光辐照下的光学特性

采用热蒸发沉积技术制备了钛酸镧(H4)薄膜,研究了1 064nm和532nm波长激光诱导辐照处理后的薄膜折射率、消光系数、激光损伤阈值和损伤过程变迁.结果表明:采用不同波长的激光辐照H4薄膜后,会使其折射率升高,但升高的幅度不大.用1 064nm的激光辐照处理,可将H4膜的激光损伤阈值从10.2J/cm~2提高到15.7J/cm~2(5脉冲辐照),而532nm激光辐照对样品损伤阈值的提高效果不明显.同一样片,1 064nm激光的损伤阈值远远高于532nm的激光损伤阈值.1064nm激光辐照下,H4薄膜经历了轻微损伤、轻度损伤、重度损伤和极度损伤四个缓慢演变的阶段.而532nm激光辐照下,H4薄膜从未损伤到损伤是一个突变的过程,经历了重度损伤和极度损伤的演变阶段.     

节瘤缺陷平坦化提高高反射膜的激光损伤阈值

探究了节瘤缺陷平坦化技术中平坦化层(刻蚀层)厚度和种子源尺寸之间的刻蚀规律,同时解释了平坦化技术提高节瘤缺陷的损伤阈值的机制。在双离子束溅射系统中,使用SiO₂微球模拟真实的种子源置于基板上,镀制1064 nm HfO₂/SiO₂高反膜,制备人工节瘤缺陷。对类似于实际种子源的SiO₂微球一系列不同刻蚀程度的实验得出了节瘤缺陷平坦化技术的刻蚀规律:只要平坦化层(刻蚀层)的厚度稍大于节瘤缺陷的种子源粒径,就可以将种子源完全平坦化。使用时域有限差分法(FDTD)模拟不同平坦化程度的节瘤缺陷内电场增强的结果与节瘤缺陷的损伤形貌进行对比实验,将损伤形貌和损伤阈值与电场强度分布之间建立联系,表明平坦化技术可以改变节瘤缺陷原有的几何结构,有效抑制节瘤缺陷的电场增强效应。最后,通过对未经平坦化和经过平坦化处理后的节瘤缺陷进行损伤阈值测试,对比结果直接验证了节瘤缺陷平坦化技术可以实现对节瘤缺陷的调控,大幅度提高了节瘤缺陷的损伤阈值。     

Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films

A series of Ta₂O₅ films with different SiO₂ additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO₂ additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO₂ overcoat and undercoat, yet was changed by adding an interlayer. SiO₂ undercoat. The interlayer improved the LIDT greatly, whereas the SiO₂ overcoat had little effect on the LIDT.     

Laser Induced Damage Threshold at 355 and 1064nm of Ta2O5 Films of Different Phases

Ta2O5 films axe deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2 O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer （XRD） results. X-ray photoelectron spectroscopy （XPS） analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2 O5 film achieves the highest laser induced damage threshold （LIDT） either at 355 or 1064nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.     

Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors

The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO₂/SiO₂ high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm² by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 °C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing.     

Influence of overcoat on laser-induced damage threshold of 532 and 800 nm TiO2/SiO2 high reflectors

TiO₂/SiO₂ high reflectors with and without a SiO₂ overcoat are deposited by electron-beam evaporation. The film properties are characterized by visible spectrometry measures, structure analysis, roughness and laser-induced damage threshold (LIDT) tests, surface defects and damage morphology observation. The effects of overcoats on LIDT at 532 nm, 8 ns and 800 nm, 220 ps laser pulses are investigated. The relations between film structure, roughness, surface defects, electric field and LIDT are discussed. It is found that overcoats can increase the LIDT at these two laser wavelengths. The reduction of peak temperature, the low defects density and roughness, the low intrinsic absorption of SiO₂ and its amorphous structure are the main reasons for LIDT improvement by overcoats.     

Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

Two kinds of HfO₂/SiO₂ 800 nm high-reflective (HR) coatings, with and without SiO₂ protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO₂ protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO₂ protective layer for HfO₂/SiO₂ HR coating with SiO₂ protective layer. The relation of LIDT for two kinds of HfO₂/SiO₂ HR coatings in calculation agrees with the experiment result.     

Preparation of sol-gel ZrO2-SiO2 highly reflective multilayer films and laser-induced damage threshold characteristic

Sol-gel (ZrO₂/SiO₂)¹² ZrO₂ films were prepared by spin coating method. The reflectivity spectrum of the films was measured with a Lambda 900 spectrometer. In order to investigate laser-induced damage threshold (LIDT) characteristic of highly reflective films, one-layer ZrO₂ and SiO₂ films, two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were also prepared by spin coating method. LIDT of each film was measured. Damage morphology after laser irradiation was characterized by optical microscopy (Nikon E600K). The experimental results showed that the reflectivity of (ZrO₂/SiO₂)¹² ZrO₂ film at 1064 nm and 355 nm wavelength is 99.7%. The LIDT results decreases as the number of layer of films increases. All the films have similar damage morphology. The experimental results are explained by the different temperature profiles of the films.     

Effects of deposition parameters on laser-induced damage threshold of Ta2O5 films

Ta₂O₅ films were deposited on BK7 substrates by e-beam evaporation with different deposition parameters such as substrate temperature (323-623 K), oxygen pressure (0.5-3.0×10⁻² Pa) and deposition rate (0.2-0.5 nm/s). Absorption, scattering and chemical composition were investigated by surface thermal lensing (STL) technique, total integrated scattering (TIS) measurement and X-ray photoelectron spectroscopy (XPS), respectively. The laser-induced damage threshold (LIDT) was assessed using pulsed Nd:YAG 1064 nm laser at a pulse length of 12 ns. The results showed that optical properties, absorption and LIDT were influenced by the deposition parameters and annealing. However, scattering was little correlated with the deposition parameters. On the whole, the LIDT increased with increasing substrate temperature and oxygen pressure, whereas it increased firstly and then decreased upon increasing deposition rate. After annealing at 673 K for 12 h, the LIDT of films improved significantly. The dependence of possible damage mechanism on deposition parameters was discussed.     

Investigation of annealing effects on the laser-induced damage threshold of amorphous Ta2O5 films

Ta₂O₅ films were deposited using the conventional electron beam evaporation method and then annealed at temperatures in the range 373-673 K. Chemical composition, scattering and absorption were examined by X-ray photoelectron spectroscopy (XPS), total integrated scattering (TIS) measurement and the surface thermal lensing (STL) technique, respectively. The laser-induced damage threshold (LIDT) was assessed using the output from an Nd:YAG laser with a pulse length of 12 ns. The results showed that the improvement of the LIDT after annealing was due to the reduced substoichiometric and structural defects present in the film. The LIDT increased slightly below 573 K and then increased significantly with increase in annealing temperature, which could be attributed to different dominant defects. Moreover, the root mean square (RMS) roughness and scattering had little effect on the LIDT, while the absorption and the LIDT were in accord with a general relation.     

Mechanism for defect dependence of damage morphology in HfO2/SiO2 high reflectivity coating under nanosecond ultraviolet laser irradiation

High reflectivity coating is designed and fabricated with HfO₂/SiO₂ stacks. The laser-induced damage experiment is prepared by a third-order harmonic generation of Nd:YAG laser (355 nm, 8 ns). Typical damage micrographs are obtained using atomic force microscope (AFM) and scanning electron microscope (SEM). A theoretical model based on the thermal transfer is tried to describe the defect dependence of damage morphology. Three situations are considered in this model: single defect, couple defects and high absorption film. The calculated results show that the second situation agrees well with the experiment.     

Characteristics of nodular defect in HfO2/SiO2 multilayer optical coatings

Laser-induced damage is associated with nodular defects in HfO₂/SiO₂ multilayer films. In order to investigate the damage characteristics of HfO₂/SiO₂ multilayer mirrors and find the information of improving laser-induced damage threshold, nodular defects are characterized by multiple analytical techniques; the damage morphologies induced by nodular-ejections are presented; the depths of nodular-ejection pits are investigated; the laser-induced damage threshold of zero probability and the stabilities of nodular-ejection pits exposed to repetitive illuminations are studied. Results show that domes in the film surface are nodular defects. Reliable depth information of nodular-ejection pits is obtained by counting layers from the damage edge. The depth statistical result implies nodular defects in these samples are usually originated from deep seeds. Some process optimizations suggestions are given based on the depth information. A simple tractable method is proposed to determine the functional damage threshold of these HfO₂/SiO₂ multilayer films basing on the damage experiments.