High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

We present the high-temperature characteristics of Ti/Al/Ni/Au（15 nm/220 nm/40 nm/50 nm） multiplayer contacts to n-type GaN （Nd = 3.7 × 10^17 cm^-3, Nd = 3.0 × 10^18 cm^-3）. The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the AI layer even the Ti layer.     

王水提取-在线氩气稀释-电感耦合等离子体质谱法测定地质样品中的银

采用电感耦合等离子体质谱法（ICP-MS）测定地质样品中的银（Ag）时,会遭受以锆（Zr）源为代表的氧化物与氢氧化物质谱干扰。本文建立了一种基于王水提取-在线氩气稀释-ICP-MS的分析方法,样品中超过90%的Zr组分在沸水浴-王水提取过程中被去除,样品溶液中残余Zr对107Ag所造成的质谱干扰,则通过在线氩气稀释技术（在样品气溶胶进入ICP炬焰前使用适量Ar气进行稀释）被有效消除（Zr0+ZrOH/Zr＜0.01%）。在最佳化的运行条件下,本方法获得的Ag方法检出限（LOD, 3σ)为1.86ng/g,20种国家地质标准参考物质在本方法下的分析结果与标准值相符,本方法能够充分应用于批量地质样品分析。