Technology demonstration of a novel poly-Si nanowire thin film transistor

A simple process flow method for the fabrication of poly-Si nanowire thin film transistors(NW-TFTs) without advanced lithographic tools is introduced in this paper.The cross section of the nanowire channel was manipulated to have a parallelogram shape by combining a two-step etching process and a spacer formation technique.The electrical and temperature characteristics of the developed NW-TFTs are measured in detail and compared with those of conventional planar TFTs(used as a control).The as-demonstrated NW-TFT exhibits a small subthreshold swing(191 mV/dec),a high ON/OFF ratio(8.5 × 10~7),alow threshold voltage(1.12 V),a decreased OFF-state current,and a low drain-induced-barrier lowering value(70.11 mV/V).The effective trap densities both at the interface and grain boundaries are also significantly reduced in the NW-TFT.The results show that all improvements of the NW-TFT originate from the enhanced gate controllability of the multi-gate over the channel.     

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Ditof the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness(EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy(HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers.     

PAN-S作为一种新的金属指示剂络合滴定铜和锌

引言 1-(2-吡啶偶氮)2-萘酚(PAN)是一种难溶于水、稀酸、稀碱的金属指示剂和萃取显色剂,在一定的条件下,我们把PAN磺化就成为能溶于水的1-(2-吡啶偶氮)2-萘酚磺酸(简称PAN-S)(另文发表).它能与多种金属离子反应形成可溶于水的络合物.因此,作为指示剂和光度显色剂,PAN-S比PAN更为优越.它不象PAN,需加入有机溶剂和非离子表面活性剂,以保证无沉淀析出.对于2-(2-吡啶偶氮)-1-萘酚磺酸(α-PAN-S)已作了比较系统的研究,而对β-PAN-S作为金属指示剂尚未见报道.本文采用PAN-S作为指示剂,用EDTA滴定Cu~(2+)和Z_n~(2+),终点敏锐,测定精密度高,方法回收率满意.     

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.     

具有满单泛分解态射的广义逆

态射的Moore-Penrose逆是矩阵的Moore-Penrose逆在有对合＊的范畴中的推广．本文着重给出具有满单泛分解态射f的（1，3．4）-逆和Moore-Penrose存在的充要条件，同时也推广了具有泛分解广义逆的相应结果．     

快速多极边界元法用于扩散光学断层成像研究

在求解扩散光学断层成像中的正向问题时, 目前普遍采用有限元法, 但是随着实际模型规模的增大, 有限元法的计算量问题日益显著, 而边界元法则由于可以降低计算维度使计算量减少而备受关注. 本文以均匀的高散射介质为模型, 研究了将快速多极边界元法用于扩散光学断层成像的正向问题. 快速多极边界元法利用核函数的多极展开, 将常规边界元法中系数矩阵和迭代矢量的乘积项等价为相应四叉树结构的一次递归, 再结合广义最小残量法进行迭代求解. 将计算结果和蒙特卡罗法的模拟结果进行了比较, 表明利用快速多极边界元法的模拟结果和蒙特卡罗法的结果有很好的一致性. 研究结果验证了快速多极边界元法可以用于扩散光学断层成像, 为其大规模和实时成像带来可观的前景. 关键词： 扩散光学断层成像 边界元法 快速多极边界元法     

甲酰胺对有序介孔二氧化硅形貌的影响

At room temperature and in acidic solution, ordered mesoporous silicas with particular morphology were synthesized using cetylpyridinium chloride as the template and formamide as the cosolvent. Scanning electron microscope (SEM), small angle X-ray diffraction (SXRD), and nitrogen adsorption techniques were used to characterize the as-synthesized and calcined samples. Results showed that the samples had hexagonal mesostructure analogous to MCM-41 and relatively narrow pore-size distributions (BJH). Besides, BET surface areas of the samples were in the range of 1 000～1 250 m²·g^-1 and high total pore volumes were up to 1.367 cm³·g^-1. Addition of formamide affected obviously mesostructures and the morphology of the mesoporous silica. Furthermore, with the increase of the concentration of formamide, the unit-cell constant decreased and particle shape changed from gyroids to fibers.     

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)with an atomic layer deposited Al2O3gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated.Temperature dependent electrical characteristics are investigated.Different electrical behaviors are observed in two temperature regions,and the underlying mechanisms are discussed.It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current,which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions.Methods to further reduce the off-state drain leakage current are given.     

不同剂量率下锗硅异质结双极晶体管电离损伤效应研究

对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT), 在不同辐照剂量率下进行⁶⁰Co γ射线的辐照效应与退火特性的研究. 测量结果表明, 两种辐照剂量率下, 随着辐照总剂量增加, 晶体管基极电流增大, 共发射极电流放大倍数降低, 且器件的辐照损伤、性能退化与辐照剂量率相关, 低剂量率下辐照损伤较高剂量率严重. 在经过与低剂量率辐照等时的退火后, 高剂量率下的辐照损伤仍较低剂量率下的损伤低, 即待测SiGeHBT具有明显的低剂量率损伤增强效应(ELDRS). 本文对相关的物理机理进行了探讨分析. 关键词： 锗硅异质结双极晶体管 低剂量率辐照损伤增强 辐照效应     

Ta和TaN底电极对原子层淀积HfO2介质MIM电性能的影响

以Ta,TaN为衬底,采用原子层淀积方法制备高介电常数HfO2介质,比较研究了不同衬底电极对金属-绝缘体-金属(MIM)电容的性能影响.结果表明,采用TaN底电极能够获得较高的电容密度和较小的电容电压系数(VCC),在1MHz下的其电容密度为7.47fF/μm2,VCC为356ppm/V2和493ppm/V,这归因于TaN底电极与HfO2介质之间良好的界面特性.两种电容在3V时漏电流为5×10-8A/cm2左右,基于TaN底电极的MIM电容表现出具有较高的击穿强度,其在室温下的导电机理为肖特基发射.