Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide |
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| Authors: | Li Jian-Feng Chang Wen-Li Ou Gu-Ping and Zhang Fu-Jia |
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| Affiliation: | Department of Physics, Lanzhou University, Lanzhou 730000, China; School of Mathematics, Physics & Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China |
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| Abstract: | Fabrication of ambipolar organic field-effect transistors (OFETs) is
essential for the achievement of an organic complementary logic
circuit. Ambipolar transports in OFETs with heterojunction
structures are realized. We select pentacene as a P-type material and
N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic
diimide (PTCDI-TFB) as a n-type material in the active layer of the
OFETs. The field-effect transistor shows highly air-stable ambipolar
characteristics with a field-effect hole mobility of
0.18~cm2/(V.s) and field-effect electron mobility of
0.031~cm2/(V.s). Furthermore the mobility only slightly
decreases after being exposed to air and remains stable even for
exposure to air for more than 60 days. The high electron affinity of
PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly
monolayer between the SiO2 gate dielectric and the organic
active layer result in the observed air-stable characteristics of
OFETs with high mobility. The results demonstrate that using the OTS
as a modified gate insulator layer and using high electron affinity
semiconductor materials are two effective methods to fabricate OFETs
with air-stable characteristics and high mobility. |
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| Keywords: | organic heterojunction transistors ambipolar air-stable high electron affinity |
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