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1.
选用五氧化二钽(Ta2O5)-聚甲基丙烯酸甲酯(PMMA)复合材料作为栅绝缘层制备了并五苯有机场效应晶体管(OFETs)。通过在Ta2O5表面旋涂一层PMMA可以降低栅绝缘层的表面粗糙度,增大其场效应晶体管的迁移率。研究了厚度在20~60 nm范围内的PMMA对复合绝缘层表面形貌、粗糙度以及器件电学性能的影响。结果表明,当PMMA厚度为40 nm时,器件的电学性能最佳。与单一的Ta2O5栅绝缘层器件相比,其场效迁移率由4.2×10-2 cm2/(V·s)提高到0.31 cm2/(V·s);栅电压增加到-20 V时,开关电流比由2.9×102增大到2.9×105。 相似文献
2.
High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification 下载免费PDF全文
This paper presents two n-channel organic heterojunction
transistors with modified insulator by using
hexadecafluorophthalocyaninatocopper (F16CuPc)/copper
phthalocyanine (CuPc) and F16CuPc/pentacene as the active
layers. Compared with a single-layer device, it reports that an
improved field-effect mobility and a 6-fold higher drain current are
observed. The highest mobility of 0.081~cm2/(V.s) was
obtained from F16CuPc/CuPc heterojunction devices. This result
is attributed to the dual effects of the organic heterojunction and
interface modification. Furthermore, for two heterojunction devices,
the performance of the F16CuPc/CuPc-based transistor is better than
that of F16CuPc/pentacene. This is attributed to the
morphologic match of two organic components. 相似文献
3.
制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO2作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane (OTS),phenyltrimethoxysilane (PhTMS),来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|V
关键词:
有机薄膜晶体管
自组装单分子层
场效应迁移率
低栅极调制电压 相似文献
4.
The paper reviews the recent year publications concerning organic field-effect transistors (OFETs). A lot of works have been
performed to help understanding the structural and electrical properties of materials used to construct OFETs. It has been
established that in partially ordered systems, the charge transport mechanism is thermally activated and field-assisted hopping
transport and the hopping transport between disorder-induced localized states dominate over intrinsic polaronic hopping transport
seen in organic single crystals. Many research attempts have been carried out on the design of air-stable organic semiconductors
with a solution process which is capable of producing OFETs with excellent properties and good stability when subjected to
multiple testing cycles and under continuous electrical bias. Recent experiments have demonstrated ambipolar channel conduction
and light emission in conjugated polymer FETs. These achievements are the basis for construction of OLED based displays driven
by active matrix consisting of OFETs. 相似文献
5.
A. N. Aleshin I. P. Shcherbakov I. N. Trapeznikova V. N. Petrov 《Physics of the Solid State》2016,58(9):1882-1890
Organic field-effect transistor (OFET) structures with the active layers on the basis of composite films of semiconductor polymer poly(3-hexylthiophene) (P3HT), fullerene derivatives [60]PCBM, [70]PCBM, and nickel (Ni) nanoparticles are obtained, and their optical, electrical, and photoelectrical properties are studied. It is shown that introducing Ni nanoparticles into P3HT: [60]PCBM and P3HT: [70]PCBM films leads to an increase in the absorption and to quenching of photoluminescence of the composite in the 400–600 nm spectral band due to the plasmon effect. In P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFET structures at the P3HT: [60]PCBM and P3HT: [70]PCBM concentrations of ~1: 1 and Ni concentrations of ~3–5 wt %, current–voltage (I–V) characteristics typical of ambipolar OFETs with the dominant hole conduction are observed. The charge-carrier (hole) mobilities calculated from the I–V characteristic at VG =–10 V were found to be ~0.46 cm2/(V s) for P3HT: [60]PCBM: Ni and ~4.7 cm2/(V s) for P3HT: [70]PCBM: Ni, which means that the mobility increases if [60]PCBM in the composition is replaced with [70]PCBM. The effect of light on the I–V characteristics of P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFETs is studied. 相似文献
6.
有机场效应晶体管(Organic field effect transistor,OFET)的非线性特性是指其输出特性曲线在较低的漏极电压下出现类似于二极管的电压电流特性曲线,这种现象在有机场效应晶体管的实验研究中极为常见。Simonetti等通过引入随栅极电压变化的迁移率提出了模型并成功解释了这一现象,但实验中从器件转移特性得出的迁移率通常与栅极电压无关。本文通过引入常数迁移率对该模型进行改进,运用改进的模型研究了影响OFET非线性特性的主要因素,并对如何更加准确地获得器件参数进行了探究。 相似文献
7.
A. N. Aleshin I. P. Shcherbakov F. S. Fedichkin P. E. Gusakov 《Physics of the Solid State》2012,54(12):2508-2513
The optical and electrical properties of light-emitting field-effect transistor structures with an active layer based on nanocomposite films containing zinc oxide (ZnO) nanoparticles dispersed in the matrix of the soluble conjugated polymer MEH-PPV have been investigated. It has been found that the current-voltage characteristics of the field-effect transistor based on MEH-PPV: ZnO films with a composite component ratio of 2: 1 have an ambipolar character, and the mobilities of electrons and holes in these structures at a temperature of 300 K reach high values up to ~1.2 and ~1.4 cm2/V s, respectively, which are close to the mobilities in fieldeffect transistors based on ZnO films. It has been shown that the ambipolar field-effect transistor based on MEH-PPV: ZnO films emits light at both positive and negative gate bias voltages. The mechanisms of injection, charge carrier transport, and radiative recombination in the studied structures have been discussed. 相似文献
8.
A reliable surface treatment for the pentacene/gate dielectric interface was developed to enhance the electrical transport properties of organic thin-film transistors (OTFTs). Plasma-polymerized fluorocarbon (CFx) film was deposited onto the SiO2 gate dielectric prior to pentacene deposition, resulting in a dramatic increase of the field-effect mobility from 0.015 cm2/(V s) to 0.22 cm2/(V s), and a threshold voltage reduction from −14.0 V to −9.9 V. The observed carrier mobility increase by a factor of 10 in the resulting OTFTs is associated with various growth behaviors of polycrystalline pentacene thin films on different substrates, where a pronounced morphological change occurs in the first few molecular layers but the similar morphologies in the upper layers. The accompanying threshold voltage variation suggests that hole accumulation in the conduction channel-induced weak charge transfer between pentacene and CFx. 相似文献
9.
Iulia G. Korodi Daniel Lehmann Michael Hietschold Dietrich R. T. Zahn 《Applied Physics A: Materials Science & Processing》2013,111(3):767-773
In this work, three different preparation conditions were used for testing the performance of p-conducting copper phthalocyanine (CuPc) organic field-effect transistors (OFETs). The charge carrier mobility (μ sat=(1.5±0.6)×10?3 cm2/V?s) of the CuPc OFETs with the CuPc film deposited while keeping the substrate at room temperature could be improved when the gate dielectric was modified by a self-assembled monolayer of n-octadecyltrichlorosilane (μ sat=(3.8±0.4)×10?3 cm2/V?s) or when elevated temperatures were applied to the substrate (T S,av=127 °C) during the deposition of the organic film (μ sat=(6.5±0.8)×10?3 cm2/V?s). For the latter case, the dependence of the mobility and threshold voltage with increasing thickness of the organic film was tested—above 13 nm film thickness, no further significant increase of the hole mobility or change in the threshold voltage could be observed. The environmental stability of the OFETs was checked by performing ex situ measurements immediately as the sample was exposed to atmosphere and after 40 days of exposure. The effect of the different preparation conditions on the morphology of the organic films prepared in this work is also discussed in this context. 相似文献
10.
Seokgeun Jin Byung Jun Jung Chung Kun Song Jeonghun Kwak 《Current Applied Physics》2014,14(12):1809-1812
We introduce a room temperature and solution-processible vanadium oxide (VOx) buffer layer beneath Au source/drain electrodes for bottom-contact (BC) organic field-effect transistors (OFETs). The OFETs with the VOx buffer layer exhibited higher mobility and lower threshold voltages than the devices without a buffer layer. The hole mobility with VOx was over 0.11 cm2/V with the BC geometry with a short channel length (10 μm), even without a surface treatment on SiO2. The channel width normalized contact resistance was decreased from 98 kΩ cm to 23 kΩ cm with VOx. The improved mobility and the reduced contact resistance were attributed to the enhanced continuity of pentacene grains, and the increased work function and adhesion of the Au electrodes using the VOx buffer layer. 相似文献
11.
Study on characteristics of a double-conductible channel organic thin-films transistor with an ultra-thin hole-blocking layer 下载免费PDF全文
The properties of top-contact organic thin-film transistors
(TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1,
10-phenanthroline (BCP) as a hole-blocking interlayer have been
improved significantly and a BCP interlayer was inserted into the
middle of the pentacene active layer. This paper obtains a fire-new
transport mode of an OTFT device with double-conductible channels. The
accumulation and transfer of the hole carriers are limited by the
BCP interlayer in the vertical region of the channel. A huge
amount of carriers is located not only at the interface
between pentacene and the gate insulator, but also at the two interfaces
of pentacene/BCP interlayer and pentacene/gate insulator,
respectively. The results suggest that the BCP interlayer may be
useful to adjust the hole accumulation and transfer, and can
increase the hole mobility and output current of OTFTs. The TC-OTFTs
with a BCP interlayer at VDS=-20~V showed excellent hole
mobility μFE and threshold voltage VTH of
0.58~cm2/(V\cdots) and --4.6~V, respectively. 相似文献
12.
13.
《Current Applied Physics》2010,10(4):1132-1136
We synthesized a new photo-curable organic/inorganic hybrid material, cyclotetrasiloxane (CTS) derivative containing cyclohexene-1,2-epoxide functional groups (CTS-EPOXY), and its characteristics are compared with a prototypical organic gate insulator of poly(4-vinylphenol) (PVP) in the organic thin film transistors (OTFTs) using pentacene as an active p-type organic semiconductor. Compared with PVP, CTS-EPOXY shows better insulating characteristics and surface smoothness. A metal/insulator/metal (MIM) device with the 300-nm-thick CTS-EPOXY film shows more than two orders of magnitude lower current (less than 40 nA/cm2 over the voltage range up to 60 V) compared with PVP. In addition, the pentacene TFT with CTS-EPOXY as a gate dielectric layer shows slightly higher field-effect mobility of μFET = 0.20 cm2/V s compared to that with PVP. 相似文献
14.
15.
The electronic and optoelectronic properties of field-effect transistor structures with an active layer based on composite films of a semiconducting polymer, namely, polyvinylcarbazole (PVC), with nickel nanoparticles have been investigated. It has been shown that these structures at low nickel concentrations (5–10 wt %) possess current-voltage characteristics that indicate an ambipolar transport. For the field-effect transistor structures based on PVC: Ni (Ni ~ 5 wt %) films, the mobilities of electrons and holes are found to be ~1.3 and ~1.9 cm2/V s, respectively. It has been established that the photosensitivity observed in these structures is associated with the specific features of transport in the film of the polymer with nickel nanoparticles. The mechanism of this transport is determined by the modulation of electrical conductivity of the working channel of the field-effect transistor by applying a combination of incident light and gate voltages. 相似文献
16.
柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域.
关键词:
柔性
晶体管
有机/聚合物
溶液加工 相似文献
17.
Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer 下载免费PDF全文
The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source--drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/(V·s). It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/(V·s). It indicates that further reducing the contact resistance of OTFTs should be carried out. 相似文献
18.
The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm2/(V s) that was initially 0.62 cm2/(V s), when a buffer layer of thermally evaporated 100 nm SnO2 film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm2/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 105 to that of the unprotected devices (∼104) which was reduced from ∼106 before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of H2O and O2 into the devices by the IBAD SnO2 thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices. 相似文献
19.
Synthesis,Characterization of 9, 9'-Bianthracene and Fabrication of 9, 9'-Bianthracene Field-Effect Transistors 下载免费PDF全文
We synthesize and purify 9, 9'-bianthracene with the purity up to 96.4%. The electronic and crystallographic structures of 9, 9'-bianthracene are studied. The results of a joint experimental investigation based on a combination of x-ray diffraction (XRD) spectra, hydrogen nuclear magnetic (HNMR) spectra, infrared absorption (FT-IR) spectra, and mass spectra (MS) of 9, 9'-bianthracene are obtained. The uniform compact film is observed by an atomic-force microscope (AFM). Organic field effect transistors (OFETs) with an active layer based on the synthesized 9, 9'-bianthracene are fabricated for the first time. Its field-effect mobility is as large as 0.067 cm^2 /(V·s) and the on/off ratio is above 5 ×10^4. The result demonstrates that the oligomerization of a small semiconductor molecule is an effective method to develop high-mobility organic semiconductors. 相似文献
20.
Masakazu Nakamura Hirokazu Ohguri Naoyuki Goto Hiroshi Tomii Mingsheng Xu Takashi Miyamoto Ryousuke Matsubara Noboru Ohashi Masaaki Sakai Kazuhiro Kudo 《Applied Physics A: Materials Science & Processing》2009,95(1):73-80
Extrinsic factors to disturb the carrier transport in pentacene field-effect transistors (FETs), as a representative of the
high-mobility organic FETs (OFETs), have been comprehensively analyzed by using atomic-force-microscope potentiometry (AFMP),
microscopic four-point-probe field-effect transistor (MFPP-FET) measurement, and other techniques. In the first part, by mainly
using AFMP as a powerful tool to reveal the potential distribution in working OFETs, we show how and how much the formation
of source/drain electrodes influences the apparent field-effect mobility both for top- and bottom-contact configurations.
In the second part, we show the influence of irregular grain structures and regular grain boundaries. The films grown both
at very low and high temperature ranges contain distinctive insulating parts, which make the apparent mobility very low. Within
the moderate growth temperature range, the intrinsic field-effect mobility obtained by MFPP-FET measurement is proportional
to the average grain size. This behavior is well explained by the polycrystalline model with the diffusion theory. According
to the observations in this work, it is obvious that these extrinsic limiting factors must be carefully excluded to discuss
the intrinsic mechanism of the carrier transport in OFETs. 相似文献