| 旋涂速度对制备P3HT有机场效应晶体管性能的影响 |
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| 引用本文： | 蒋晶,郑灵程,王倩,吴峰,程晓曼.旋涂速度对制备P3HT有机场效应晶体管性能的影响[J].发光学报,2015,36(8):941-946. |
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| 作者姓名： | 蒋晶 郑灵程 王倩 吴峰 程晓曼 |
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| 作者单位： | 1. 天津理工大学 理学院, 天津 300384;
2. 天津理工大学 材料科学与工程学院, 显示材料与光电器件重点实验室(教育部), 天津光电材料与器件重点实验室, 天津 300384 |
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| 摘 要： | 采用溶液化的方法制备了以PMMA为绝缘层、P3HT为有源层的有机场效应晶体管.研究了P3HT有源层和PMMA绝缘层的旋涂速度对器件性能的影响.实验结果表明,当P3HT和PMMA的旋涂速度均为2 000 r/min时,器件的性能最佳.峰值场效应迁移率为6.84×10-2 cm2·V－1·s－1.结果表明,选择适当的旋涂速度是一种有效提高溶液化制备有机场效应晶体管性能的方法.
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| 关 键 词： | 有机场效应晶体管 旋涂速度 P3HT PMMA |
| 收稿时间： | 2015-05-19 |
Role of Spinning Speed in Fabrication of Spin-coated P3 HT-based OFETs |
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| JIANG Jing,ZHENG Ling-cheng,WANG Qian,WU Feng,CHENG Xiao-man.Role of Spinning Speed in Fabrication of Spin-coated P3 HT-based OFETs[J].Chinese Journal of Luminescence,2015,36(8):941-946. |
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| Authors: | JIANG Jing ZHENG Ling-cheng WANG Qian WU Feng CHENG Xiao-man |
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| Institution: | 1. School of Science, Tianjin University of Technology, Tianjin 300384, China;
2. Institute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Device, Tianjin 300384, China |
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| Abstract: | P3HT-based organic field effect transistors(OFETs) with PMMA gate dielectric were fabricated by solution process. The effects of the spinning speeds of both P3HT active layer and PMMA gate dielectric on the performance of the devices were investigated. The experiment results show that the fabricated OFETs exhibit the optimal performance at the spinning speeds of 2 000 r/min of both P3HT and PMMA, of which the field effect mobility is 6.84×10-2 cm2·V－1·s－1. This indicates that spinning speed is a technological parameter to improve the performance of solution-processed OFETs. |
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| Keywords: | organic field effect transistors spinning speed P3HT PMMA |
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