共查询到20条相似文献,搜索用时 890 毫秒
1.
A specially designed experiment is performed for investigating gate-induced
drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped
drain (LDD) NMOSFET. This paper shows that the drain bias $V_{\rm D}$ has a
strong effect on GIDL current as compared with the gate bias $V_{\rm G}$ at the
same drain--gate voltage $V_{\rm DG}$. It is found that the difference between
$I_{\rm D}$ in the off-state $I_{\rm D}-V_{\rm G}$ characteristics and the
corresponding one in the off-state $I_{\rm D}-V_{\rm D}$ characteristics, which is
defined as $I_{\rm DIFF}$, versus $V_{\rm DG}$ shows a peak. The difference between
the influences of $V_{\rm D}$ and $V_{\rm G}$ on GIDL current is shown
quantitatively by $I_{\rm DIFF}$, especially in 90nm scale. The difference is
due to different hole tunnellings. Furthermore, the maximum $I_{\rm DIFF
}$($I_{\rm DIFF,MAX})$ varies linearly with $V_{\rm DG}$ in logarithmic coordinates
and also $V_{\rm DG}$ at $I_{\rm DIFF,MAX}$ with $V_{\rm F}$ which is the characteristic
voltage of $I_{\rm DIFF}$. The relations are studied and some related
expressions are given. 相似文献
2.
Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET
devices were studied. The experimental data of short channel devices
(75--90\,nm), which does not fit formal degradation power law well,
will bring severe error in lifetime prediction. This phenomenon
usually happens under high drain voltage ($V_{\rm d}$) stress
condition. A new model was presented to fit the degradation curve
better. It was observed that the peak of the substrate current under
low drain voltage stress cannot be found in ultra-short channel
device. Devices with different channel lengths were studied under
different $V_{\rm d}$ stresses in order to understand the relations
between peak of substrate current ($I_{\rm sub}$) and channel
length/stress voltage. 相似文献
3.
An investigation of ionization and displacement damage in
silicon NPN bipolar junction transistors (BJTs) is presented. The
transistors were irradiated separately with 90-keV electrons, 3-MeV
protons and 40-MeV Br ions. Key parameters were measured {\em
in-situ} and the change in current gain of the NPN BJTS was obtained
at a fixed collector current (I_{\rm c}=1~mA). To characterise the
radiation damage of NPN BJTs, the ionizing dose D_{\i} and
displacement dose D_{\d} as functions of chip depth in the NPN
BJTs were calculated using the SRIM and Geant4 code for protons,
electrons and Br ions, respectively. Based on the discussion of the
radiation damage equation for current gain, it is clear that the
current gain degradation of the NPN BJTs is sensitive to both
ionization and displacement damage. The degradation mechanism of
the current gain is related to the ratio of D_{\rm d}/(D_{\rm
d}+D_{\rm i}) in the sensitive region given by charged particles.
The irradiation particles leading to lower D_{\rm d}/(D_{\rm
d}+D_{\rm i}) within the same chip depth at a given total dose
would mainly produce ionization damage to the NPN BJTs. On the other
hand, the charged particles causing larger D_{\rm d}/(D_{\rm
d}+D_{\rm i}) at a given total dose would tend to generate
displacement damage to the NPN BJTs. The Messenger--Spratt equation
could be used to describe the experimental data for the latter
case. 相似文献
4.
Energy transfer probability in organic electrophosphorescence device with dopant 总被引:1,自引:0,他引:1 下载免费PDF全文
Based on the energy transfer process from host to dopant in an organic
electrophosphorescent (EP) device, the expression of energy transfer
probability ($\eta )$ between the host (TPD) and guest (Ir(ppy)$_{3})$ EP
systems was proposed. The results show that: ({1}) The rate of the triplet
energy transfer ($K_{\rm HG}$ and $K_{\rm GH})$ increases exponentially with
increasing donor-acceptor molecular distance ($R$), whereas decreases as the
intermolecular distance ($R_{\rm HH})$ increases from 0.8 to 2.4 nm.
Furthermore, $K_{\rm GH}$ changes more quickly than $K_{\rm HG.}$ ({2}) The energy
transfer probability ($\eta )$ increases as $R$ reduces, and the $R_{\rm HH}$
changes can be safely neglected for $R<$0.9 nm. The situation changes for
0.9nm$ < R < 1.1$nm, $R_{\rm HH }$ ($<1$nm) plays an essential role when
$\eta $ changes
and increases with the latter. However, if $R > 1.1$nm, the transfer
probability will be below zero. Here, the energy transfer principle may be
less important, and the high electroluminescence (EL) quantum efficiency of
phosphorescent system will be attributed to the direct electron-hole
recombination in phosphorescent molecules. ({3}) The $\eta $ will increase when the
Forster radius ($R_{0})$ increases or Gibb's energy decreases. 相似文献
5.
The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique 下载免费PDF全文
The role of hydrogen in hydrogenated microcrystalline silicon ($\mu $c-Si:H)
thin films in deposition processes with very high frequency
plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been
investigated in this paper. With \textit{in situ} optical emission spectroscopy (OES)
diagnosis during the fabrication of $\mu $c-Si:H thin films under different
plasma excitation frequency $\nu _{\rm e }$ (60MHz--90MHz), the
characteristic peak intensities ($I_{{\rm SiH}^*}$, $I_{{\rm H}\alpha^*}$
and $I_{{\rm H}\beta ^*}$) in SiHVHF-PECVD技术 氢化微晶硅 光发射光谱 薄膜学 VHF-PECVD technique, hydrogenated microcrystalline silicon, role of hydrogen, optical emission spectroscopy Project supported by the Natural Science Foundation of Guangdong
Province, China (Grant No 05300378), the State Key Development Program for Basic Research
of China (Grant Nos G2000028202 and G2000028203) and the Program on Natural
Science of Jinan University, Guangzhou, China (Grant No 51204056). 2005-11-25 2005-11-252006-01-05 The role of hydrogen in hydrogenated microcrystalline silicon (μc-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been investigated in this paper. With in situ optical emission spectroscopy (OES) diagnosis during the fabrication of μc-Si:H thin films under different plasma excitation frequency Ve (60MHz-90MHz), the characteristic peak intensities (IsiH*, IHα* and IHβ* ) in SiH4+H2 plasma and the ratio of (IHα* + IHβ* ) to IsiH* were measured; all the characteristic peak intensities and the ratio (IHα* + IHβ* )/IsiH* are increased with plasma excitation frequency. It is identified that high plasma excitation frequency is favourable to promote the decomposition of SiH4+H2 to produce atomic hydrogen and SiHx radicals. The influences of atomic hydrogen on structural properties and that of SiHx radicals on deposition rate of μc-Si:H thin films have been studied through Raman spectra and thickness measurements, respectively. It can be concluded that both the crystalline volume fraction and deposition rate are enhanced with the increase of plasma excitation frequency, which is in good accord with the OES results. By means of FTIR measurements, hydrogen contents of μc-Si:H thin films deposited at different plasma excitation frequency have been evaluated from the integrated intensity of wagging mode near 640 cm^-1. The hydrogen contents vary from 4% to 5%, which are much lower than those of μc-Si:H films deposited with RF-PECVD technique. This implies that μc-Si:H thin films deposited with VHF-PECVD technique usually have good stability under light-soaking. 相似文献
6.
This paper studies an oxide/silicon core/shell nanowire MOSFET(OS-CSNM).Through three-dimensional device simulations,we have demonstrated that the OS-CSNM has a lower leakage current and higher I on /I off ratio after introducing the oxide core into a traditional nanowire MOSFET(TNM).The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off,drain induced barrier lowering and subthreshold swing degradation.Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM. 相似文献
7.
Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films 下载免费PDF全文
Highly conductive boron-doped hydrogenated microcrystalline silicon (\mu
c-Si:H) films are prepared by very high frequency plasma enhanced chemical
vapour deposition (VHF PECVD) at the substrate temperatures $T_{\rm S})$
ranging
from 90$^\circ$C to 270$^\circ$C. The effects of $T_{\rm S}$ on the growth and
properties of the films are investigated. Results indicate that the growth
rate, the electrical (dark conductivity, carrier concentration and Hall
mobility) and structural (crystallinity and grain size) properties are all
strongly dependent on $T_{\rm S}$. As $T_{\rm S}$ increases, it is
observed that 1)
the growth rate initially increases and then arrives at a maximum value of
13.3 nm/min at $T_{\rm S}$=210$^\circ$C, 2) the crystalline volume fraction
($X_{\rm c})$ and the grain size increase initially, then reach their maximum
values at $T_{\rm S}$=140$^\circ$C, and finally decrease, 3) the dark
conductivity ($\sigma _{\rm d})$, carrier concentration and Hall mobility have
a similar dependence on $T_{\rm S}$ and arrive at their maximum values at
$T_{\rm S}$=190$^\circ$C. In addition, it is also observed that at a lower
substrate temperature $T_{\rm S}$, a higher dopant concentration is required in
order to obtain a maximum $\sigma _{\rm d}$. 相似文献
8.
Investigation of analytical harmonic frequency and potential energy function,vibrational levels for the X^2∑^+ and A^2Л states of CN radical 下载免费PDF全文
This paper calculates the equilibrium structure and the potential energy functions of the ground state (X^2∑^+) and the low lying excited electronic state (A^2Л) of CN radical are calculated by using CASSCF method. The potential energy curves are obtained by a least square fitting to the modified Murrell-Sorbie function. On the basis of physical theory of potential energy function, harmonic frequency (ωe) and other spectroscopic constants (ωeχe, βe and αe) are calculated by employing the Rydberg-Klei-Rees method. The theoretical calculation results are in excellent agreement with the experimental and other complicated theoretical calculation data. In addition, the eigenvalues of vibrational levels have been calculated by solving the radial one-dimensional SchrSdinger equation of nuclear motion using the algebraic method based on the analytical potential energy function. 相似文献
9.
The hole-hole interaction $(E_{hh})$ has been considered in a ${\rm{CdTe /Cd}}_{1-x}{\rm {Mn}}x{\rm {Te}}$ Semimagnetic Quantum Well Wire (SQWW). The influence of the shape of the confining potential like square well and parabolic well type on the binding energy of an acceptor impurity with two holes and their Coulomb interaction between them has been studied for various impurity locations. Magnetic field has been used as a probe to understand the carrier-carrier correlation in such Quasi 1-Dimensional QWW since it alters the strength of the confining potential tremendously. In order to show the significance of the correlation between the two holes, the calculations have been done with and without including the correlation effect in the ground state wavefunction of the hyderogenic acceptor impurity and the results have been compared. The expectation value of the Hamiltonian, ${H}$, is minimized variationaly in the effective mass approximation through which $(E_{hh})$ has been obtained. 相似文献
10.
It has been confirmed that glass-forming ability (GFA) of supercooled liquids is related to not only liquid phase stability but also the crystallization resistance. In this paper, it is found that the liquid region interval (T1 - Tg) characterized by the normalized parameter of Tg/T1 could reflect the stability of glass-forming liquids at the equilibrium state, whilst the normalization of supercooled liquid region △Tx=(Tx - Tg), i.e. △Tx/Tx (wherein T1 is the liquidus temperature, Tg the glass transition temperature, and Tx the onset crystallization temperature) could indicate the crystallization resistance during glass formation. Thus, a new parameter, defined as ζ = Tg/T1+△Tx/Tx is established to predict the GFA of supercooled liquids. In comparison with other commonly used criteria, this parameter demonstrates a better statistical correlation with the GFA for various glass-forming systems including metallic glasses, oxide glasses and cryoprotectants. 相似文献
11.
It has been confirmed that glass-forming ability (GFA) of
supercooled liquids is related to not only liquid phase stability
but also the crystallization resistance. In this paper, it is found
that the liquid region interval ($T_{\rm l}-T_{\rm g})$
characterized by the normalized parameter of $T_{\rm g}$/$T_{\rm l}$
could reflect the stability of glass-forming liquids at the
equilibrium state, whilst the normalization of supercooled liquid
region $\Delta T_{\rm x}$=($T_{\rm x}-T_{\rm g})$, i.e. $\Delta
T_{\rm x}$/$T_{\rm x}$ (wherein $T_{\rm l}$ is the liquidus
temperature, $T_{\rm g}$ the glass transition temperature, and
$T_{\rm x}$ the onset crystallization temperature) could indicate
the crystallization resistance during glass formation. Thus, a new
parameter, defined as $\xi =T_{\rm g}$/$T_{\rm l}+\Delta T_{\rm
x}$/$T_{\rm x}$ is established to predict the GFA of supercooled
liquids. In comparison with other commonly used criteria, this
parameter demonstrates a better statistical correlation with the GFA
for various glass-forming systems including metallic glasses, oxide
glasses and cryoprotectants. 相似文献
12.
This paper reports that the optical emission spectroscopy (OES) is
used to monitor the plasma during the deposition process of
hydrogenated microcrystalline silicon films in a very high frequency
plasma enhanced chemical vapour deposition system. The OES
intensities (SiH\sj{*}, H微晶硅 VHF-PECVD 发射光谱学 薄膜物理学 microcrystalline silicon,
VHF-PECVD, optical emission spectroscopy 2005-11-09 2005-11-092005-12-12 This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (Sill^*, H^* and H^*β) are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH^* intensity increases with silane concentration, while the intensities of H^*α and H^*β increase first and then decrease. When the substrate temperature increases, the SiH^* intensity decreases and the intensities of H^*α and H^*β are constant. The correlation between the intensity ratio of IH^*α/ISiH^* and the crystalline volume fraction (Xc) of films is confirmed. 相似文献
13.
A first-principles study of the catalytic mechanism of the dehydriding reaction of LiNH2 through adding Ti catalysts 下载免费PDF全文
Experiments on a ball milled mixture with a 1:1 molar ratio of LiNH2 and LiH with a small amount(1 mol %) of Ti nano,TiCl3 and TiO nano 2 have revealed a superior catalytic effect on Li-N-H hydrogen storage materials.In the x-ray diffraction profiles,no trace of Ti nano,TiCl3 and TiO nano 2 was found in these doped composites,by which we deduced that Ti atoms enter LiNH2 by partial element substitution.A first-principles plane-wave pseudopotential method based on density functional theory has been used to investigate the catalytic effects of Ti catalysts on the dehydrogenating properties of LiNH2 system.The results show that Ti substitution can reduce the dehydrogenation reaction activation energy of LiNH2 and improve the dehydrogenating properties of LiNH2.Based on the analysis of the density of states and overlap populations for LiNH2 before and after Ti substitution,it was found that the stability of the system of LiNH2 is reduced,which originates from the increase of the valence electrons at the Fermi level(EF) and the decrease of the highest occupied molecular orbital(HOMO)-lowest unoccupied molecular orbital(LUMO) gap(△EH-L) near E F.The catalytic effect of Ti on the dehydrogenating kinetics of LiNH2 may be attributed to the reduction of average populations between N-H per unit bond length(nm-1),which leads to the reduction of the chemical bond strength of N-H. 相似文献
14.
Potential energy curves and analytical potential energy functions of the metastable states of B2^++ 下载免费PDF全文
The multi-reference configuration interaction method and aug-cc-pvqz (AVQZ) have been used to calculate potential energy curves (PECs) of the singlet and triplet states of the riu and rig symmetry of B2++. All of the four states (^l∏u, ^1∏g, ^3∏u and ^3∏g) are found to be metastable states, though the potential well of ^3∏u symmetry is very shallow. Based on the PECs, the analytical potential energy functions (APEFs) of these states have been fitted using the least square fitting method and two models of function. The spectroscopic parameters of each state are also calculated, and are compared with other investigations in the literature. The credibility and veracity of the two functions are evaluated. Some ideas to improve the fitting accuracy are presented. Also the vibrational levels for each state are predicted by solving the SchrSdinger equation of nuclear motion. 相似文献
15.
Study on spectroscopic parameters and molecular constants of HCl(X~1Σ~+) molecule by using multireference configuration interaction approach 下载免费PDF全文
Equilibrium internuclear separations, harmonic frequencies
and potential energy curves (PECs) of HCl($X^{1}\Sigma ^{ + })$
molecule are investigated by using the highly accurate valence
internally contracted multireference configuration interaction
(MRCI) approach in combination with a series of
correlation-consistent basis sets in the valence range. The PECs are
all fitted to the Murrell--Sorbie function, and they are used to
accurately derive the spectroscopic parameters ($D_{\rm e}$,
$D_{0}$, $\omega_{\rm e}\chi_{\rm e}$, $\alpha_{\rm e}$ and $B_{\rm
e})$. Compared with the available measurements, the PEC obtained at
the basis set, aug-cc-pV5Z, is selected to investigate the
vibrational manifolds. The constants $D_{0}$, $D_{\rm e}$, $R_{\rm
e}$, $\omega_{\rm e}$, $\omega_{\rm e}\chi_{\rm e}$, $\alpha_{\rm
e}$ and $B_{\rm e}$ at this basis set are 4.4006~eV, 4.5845~eV,
0.12757~nm, 2993.33~cm$^{ - 1}$, 52.6273~cm$^{ - 1}$, 0.2981~cm$^{ -
1}$ and 10.5841~cm$^{ - 1}$, respectively, which almost perfectly
conform to the available experimental results. With the potential
determined at the MRCI/aug-cc-pV5Z level of theory, by numerically
solving the radial Schr\"{o}dinger equation of nuclear motion in the
adiabatic approximation, a total of 21 vibrational levels are
predicted. Complete vibrational levels, classical turning points,
inertial rotation and centrifugal distortion constants are
reproduced, which are in excellent agreement with the available
Rydberg--Klein--Rees data. Most of these theoretical vibrational
manifolds are reported for the first time to the best of our
knowledge. 相似文献
16.
This paper calculates the transition wavelengths and probabilities
of the two-electron and one-photon (TEOP) transition from the
$(3{\rm s}^{-1}_{1/2}4{\rm d}_{j})_{J=1,2}$ to $(3{\rm
p}^{-1}_{3/2}4{\rm s}_{1/2})_{J=1}$ and the $(3{\rm
p}^{-1}_{1/2}4{\rm s}_{1/2})_{J=1}$ to $(3{\rm d}^{-1}_{j}4{\rm
d}_{j'})_{J=1,2}$ for highly charged Ni-like ions with atomic number
$Z$ in the range $47\leq Z\leq92$. In the calculations, the
multi-configuration Dirac--Fock method and corresponding program
packages GRASP92 and REOS99 were used, and the relativistic effects,
correlation effects and relaxation effects were considered
systematically. It is found that the TEOP transitions are very
sensitive to the correlation of electrons, and the probabilities
will be enhanced sharply in some special $Z$ regions along the
isoelectronic sequence. The present TEOP transition wavelengths are
compared with the available data from some previous publications,
good agreement is obtained. 相似文献
17.
The comparison between single-point energy scanning (SPES) and geometry optimization (OPT) in determining the equilibrium geometry of the α^3∑u^+ state for ^7Li2 is made at numerous basis sets such as 6-311++G(2df), cc-PVTZ, 6-311++G(2df, p), 6-311G(3df,3pd), 6-311++G(2df,2pd), D95(3df,3pd), 6-311++G, DGDZVP, 6-311++G(3df,2pd), 6-311G(2df,2pd), D95V++, CEP-121G, 6-311++G(d,p), 6-311++G(2df, pd) and 6-311++G(3df,3pd) in full active space using a symmetry-adapted-cluster/ symmetry-adapted-cluster configuration-interaction (SAC/SAC=CI) method presented in Gaussian03 program package. The difference of the equilibrium geometries obtained by SPES and by OPT is reported. Analyses show that the results obtained by SPES are more reasonable than those obtained by OPT. We have calculated the complete potential energy curves at those sets over a wide internuclear distance range from about 3.0α0 to 37.0α0, and the conclusion is that the basis set cc-PVTZ is the most suitable one. With the potential obtained at ccopVTZ, the spectroscopic data (Te, De, D0, ωe,ωeХe, αe and Be) are computed and they are 1.006 eV, 338.71 cm^-1, 307.12 cm^-1, 64.88 cm^-1, 3.41 cm^-1, 0.0187 cm^-1 and 0.279 cm^-1, respectively, which are in good agreement with recent measurements. The total 11 vibrational states are found at J=0. Their corresponding vibrational levels and classical turning points are computed and compared with available RKR data, and good agreement is found. One inertial rotation constant (By) and six centrifugal distortion constants (Dr Hv, Lv, My, Nv, and Ov) are calculated. The scattering length is calculated to be -27.138α0, which is in good accord with the experimental data. 相似文献
18.
Investigations on spectroscopic parameters, vibrational levels, classical turning points and inertial rotation and centrifugal distortion constants for the X1∑+g state of sodium dimer 下载免费PDF全文
The density functional theory (B3LYP, B3P86) and the quadratic
configuration-interaction method including single and double
substitutions (QCISD(T), QCISD) presented in Gaussian03 program
package are employed to calculate the equilibrium internuclear
distance $R_{\rm e}$, the dissociation energy $D_{\rm e }$ and the
harmonic frequency $\omega _{\rm e}$ for the $X{}^{1}\Sigma^{ +
}_{\rm g}$ state of sodium dimer in a number of basis sets. The
conclusion is gained that the best $R_{\rm e}$, $D_{\rm e}$ and
$\omega _{\rm e}$ results can be attained at the
QCISD/6-311G(3df,3pd) level of theory. The potential energy curve at
this level of theory for this state is obtained over a wide
internuclear separation range from 0.16 to 2.0~nm and is fitted to
the analytic Murrell--Sorbie function. The spectroscopic parameters
$D_{\rm e}$, $D_{0}$, $R_{\rm e}$, $\omega _{\rm e}$,
$\omega _{\rm e}\chi _{\rm e}$,
$\alpha _{\rm e}$
and $B_{\rm e}$ are calculated to be 0.7219~eV,
0.7135~eV, 0.31813~nm, 151.63~cm$^{ - 1}$, 0.7288~cm$^{ - 1}$,
0.000729~cm$^{ - 1}$ and 0.1449~cm$^{ - 1}$, respectively, which are in good
agreement with the measurements. With the potential obtained at the
QCISD/6-311G(3df,3pd) level of theory, a total of 63 vibrational
states is found when $J=0$ by solving the radial Schr\"{o}dinger equation
of nuclear motion. The vibrational level, corresponding classical turning
point and inertial rotation constant are computed for each vibrational
state. The centrifugal distortion constants
($D_{\upsilon }\, H_{\upsilon }$,
$L_{\upsilon }$, $M_{\upsilon }$, $N_{\upsilon }$ and $O_{\upsilon })$ are
reported for the first time for the first 31 vibrational states when $J=0$. 相似文献
19.
The speed performance and static power dissipation of the
ultra-thin-body (UTB) MOSFETs have been comprehensively investigated,
with both DC and AC behaviours considered. Source/drain extension
width ($L_{\rm sp})$ and silicon film thickness $(t_{\rm si})$ are
two independent parameters that influence the speed and static power
dissipation of UTB silicon-on-insulator (SOI) MOSFETs respectively,
which can result in
great design flexibility. Based on the different effects
of physical and geometric parameters on device characteristics, a method to
alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is
proposed. The optimal design regions of $t_{\rm si}$ and
$L_{\rm sp}$ for
low operating power and high performance logic applications are
given, which may shed light on the design of UTB SOI MOSFETs. 相似文献
20.
《Current Applied Physics》2020,20(11):1222-1225
The gate induced drain leakage (GIDL) effect in negative capacitance (NC) FinFET is investigated. A Landau–Ginzburg–Devonshire equation (which considers the polarization gradient in ferroelectric material) is used to estimate the characteristics of the NC FinFET. Specifically, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) and metal-ferroelectric-insulator-semiconductor (MFIS) NC FinFETs are compared, in order to figure out the effect of the internal metal layer on the GIDL effect. To analyze the impact of the polarization gradient on the GIDL effect in NC FinFET, a polarization gradient coefficient is varied. For MFMIS, the polarization gradient doesn't significantly affect the device performance. The subthreshold swing improves but the GIDL effect deteriorates because of the “uniform” NC effect in channel region. For MFIS, the device performance is explicitly affected by the polarization gradient. Smaller polarization gradients result in non-uniform NC effect in channel region, resulting in severe GIDL effects. On the other hand, higher polarization gradients alleviate GIDL effects. 相似文献