Giant Goos–Hnchen shifts of waveguide coupled long-range surface plasmon resonance mode

A hybrid structure based on a planar waveguide(PWG) mode coupling a long-range surface plasmon resonance(LRSPR) mode is proposed to enhance the GH shift. Both the PWG mode and LRSPR mode can be in strong resonance, and these two modes can be coupled together due to the normal-mode splitting. The largest GH shift of PWG-coupled LRSPR structure is 4156 times that of the incident beam, which is 23 times and 3.6 times that of the surface plasmon resonance(SPR) structure and the LRSPR structure, respectively. As a GH shift sensor, the highest sensitivity of 4.68 × 10~7λ is realized in the coupled structure. Compared with the sensitivity of the traditional SPR structure, the sensitivity of our structure is increased by more than 2 orders, which theoretically indicates that the proposed configuration can be applied to the field of high-sensitivity sensors in the future.     

负折射介质中可控自陡峭效应对孤子传输的影响

研究了具有非线性极化的负折射介质中孤子脉冲的传输特性,着重分析了在常规非线性传输模型中不曾出现的由负折射介质色散磁导率导致的可控自陡峭效应对孤子传输的影响.结果表明,与正自陡峭效应一样,负自陡峭效应同样造成孤子脉冲的非对称、中心偏移和高阶孤子衰减,但脉冲偏移的方向与正自陡峭效应情形相反.此外,利用可控自陡峭效应可以从某种程度上抵消三阶色散效应导致的孤子脉冲偏移,从而实现孤子脉冲中心的无偏移传输.     

色散磁导率对异向介质中的调制不稳定性的影响

基于Drude模型研究了异向介质的色散磁导率对调制不稳定性的影响. 结果表明，在反常色散情形，赝五阶非线性在异向介质的负折射区中增大了调制频谱的范围及增益值，这与常规正折射介质中出现的现象正好相反；自陡峭效应在异向介质中有可能为负值，但无论正负，也无论在正折射区还是负折射区，它都抑制调制不稳定性的产生；二阶非线性色散效应在正、负折射区中分别促进和抑制调制不稳定性的产生. 在正常色散情形，由于二阶非线性色散效应的作用，使本来在常规正折射介质中不可能出现的调制不稳定性现象也能出现，这一特性为在正常色散区形成孤     

Manipulating optical Tamm state in the terahertz frequency range with graphene

The optical Tamm state(OTS), which exists generally at the interface between metal and a dielectric Bragg mirror, has been studied extensively in the visible and near infrared spectra. Nevertheless, OTS in the terahertz(THz) region normally receives far less attention. In this Letter, we demonstrate the physical mechanism of OTS at the interface between graphene and a dielectric Bragg mirror in the THz frequency band by applying the transfer matrix method and dispersion characteristics. Based on such mechanisms, we propose an efficient method that can precisely generate and control OTS at a desired angle and frequency. Moreover, we show that the OTS is dependent on the optical conductivity of graphene, making the graphene–dielectric-Bragg-mirror a good candidate for dynamic tunable OTS device in the THz frequency range.     

F-函数扩展法求解超介质中的亮孤子和暗孤子

利用F-函数扩展法求解超介质中的超短脉冲传输方程, 探讨了超介质中的反常自陡效应和特有的二阶非线性色散效应所导致的新的孤子现象和规律. 结果表明, 正折射区的二阶非线性色散效应可以代替线性色散效应形成亮孤子; 正、负折射区的反常自陡效应由于其符号可改变, 从而可在特定条件下分别在反常色散和正常色散区形成有别于常规介质的亮、暗孤子; 反常自陡效应的符号或者反常自陡效应和三阶线性色散效应的相互比较关系能够控制亮、暗孤子中心的漂移方向. 关键词： 孤子 超介质 F-函数扩展法     

色散磁导率对异向介质中的调制不稳定性的影响

基于Drude模型研究了异向介质的色散磁导率对调制不稳定性的影响. 结果表明，在反常色散情形，赝五阶非线性在异向介质的负折射区中增大了调制频谱的范围及增益值，这与常规正折射介质中出现的现象正好相反；自陡峭效应在异向介质中有可能为负值，但无论正负，也无论在正折射区还是负折射区，它都抑制调制不稳定性的产生；二阶非线性色散效应在正、负折射区中分别促进和抑制调制不稳定性的产生. 在正常色散情形，由于二阶非线性色散效应的作用，使本来在常规正折射介质中不可能出现的调制不稳定性现象也能出现，这一特性为在正常色散区形成孤 关键词： 异向介质 调制不稳定性 色散磁导率 二阶非线性色散     

Enhancement and control of the Goos-H?nchen shift by nonlinear surface plasmon resonance in graphene

The Goos-H?nchen(GH) shift of graphene in the terahertz frequency range is investigated, and an extremely high GH shift is obtained owing to the excitation of surface plasmon resonance in graphene in the modified Otto configuration.It is shown that the GH shift can be positive or negative, and can be enhanced by introducing a nonlinearity in the substrate.Large and bistable GH shifts are demonstrated to be due to the hysteretic behavior of the reflectance phase. The bistable GH shift can be manipulated by changing the thickness of the air gap and the Fermi level or relaxation time of graphene.     

以LiF修饰阴极的有机电致发光器件性能的提高

提出了用一种无机半导体的模型来计算有机电致发光器件(OELDs)的J-V特性.通过在金属/有机物界面插入薄LiF层,由此引入的偶极子能极大地降低了电子的注入势垒和OELDs的开启电压.从而,载流子的注入得到了平衡,OELDs的性能得到了较大提高.经过数值计算,发现LiF插入层有一个约为1.5~5.0nm的最优厚度.LiF层太厚或太薄都会提高器件的开启电压、降低器件的性能.结果表明:这一模型可以用来解释OELD通过LiF修饰阴极后性能的提高.     

超常介质中暗孤子的形成和传输特性研究

利用一种扩展的双曲函数级数方法求解超常介质中的传输方程，得到了各种不同情形下的暗孤子解，分析了可控自陡效应和二阶非线性色散效应对孤子形成和传输特性的影响.结果表明，超常介质中负的自陡效应使得暗孤子的中心位置随传输距离向脉冲前沿方向漂移，与常规介质中自陡效应(恒为正)的作用相反；特别是，由于二阶非线性色散的作用，使得在没有线性群速度色散的情形下同样可形成孤子，而且在反常线性色散情形也可形成暗孤子.     

Energy transfer probability in organic electrophosphorescence device with dopant

Based on the energy transfer process from host to dopant in an organic electrophosphorescent (EP) device, the expression of energy transfer probability ($\eta )$ between the host (TPD) and guest (Ir(ppy)$_{3})$ EP systems was proposed. The results show that: ({1}) The rate of the triplet energy transfer ($K_{\rm HG}$ and $K_{\rm GH})$ increases exponentially with increasing donor-acceptor molecular distance ($R$), whereas decreases as the intermolecular distance ($R_{\rm HH})$ increases from 0.8 to 2.4 nm. Furthermore, $K_{\rm GH}$ changes more quickly than $K_{\rm HG.}$ ({2}) The energy transfer probability ($\eta )$ increases as $R$ reduces, and the $R_{\rm HH}$ changes can be safely neglected for $R<$0.9 nm. The situation changes for 0.9nm$ < R < 1.1$nm, $R_{\rm HH }$ ($<1$nm) plays an essential role when $\eta $ changes and increases with the latter. However, if $R > 1.1$nm, the transfer probability will be below zero. Here, the energy transfer principle may be less important, and the high electroluminescence (EL) quantum efficiency of phosphorescent system will be attributed to the direct electron-hole recombination in phosphorescent molecules. ({3}) The $\eta $ will increase when the Forster radius ($R_{0})$ increases or Gibb's energy decreases.