One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system

A one-dimensional continuous analytic potential solution to a generic oxide--silicon--oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide--silicon--oxide metal--oxide--semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials     

羊栖菜幼苗北方海区渡夏培育的研究

开展羊栖菜不同品系在北方海区培苗试验和不同种苗培育方式研究,结果表明:幼苗可以在北方海区渡夏培育成为羊栖菜栽培的种苗,到10月下旬达到苗种的规格,返回浙江海区下海养成,具有良好的产业前景.     

水平管内强制对流凝结换热的实验研究

一、引言 水平管内的凝结换热,由于其过程的复杂性,至今尚不足以从基本物理定律出发,定量地得出理论解析式,而主要计算关联式均来自实验研究。近三十年来,这方面文献报道较多,但是不同研究者推荐的关联式之间差别很大,有的相差一倍以上。本研究以R-12为工质,在较宽广的流量范围内(G=100—410kg/s·m~2)进行了管内凝结局部换热系数的实验研究。根据实验结果,对五个知名度较高的计算关联式进行了评价,并提出了新的局部换热系数关联式。     

强化水平管内沸腾换热的实验研究

一、前言 水平管内沸腾换热的热交换器应用十分广泛。如动力装置中的蒸发器、制冷装置中的干式蒸发器等。为有效地节约能源、减少材料消耗,深入研究强化水平管内沸腾换热及开发高效换热管就成为迫切的需要。水平管内受迫对流沸腾换热,是一复杂的换热过程。采用强化措施后,使得从机理上分析及理论求解异型水平管内对流沸腾换热过程更加困     

An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

This paper studies an oxide/silicon core/shell nanowire MOSFET(OS-CSNM).Through three-dimensional device simulations,we have demonstrated that the OS-CSNM has a lower leakage current and higher I on /I off ratio after introducing the oxide core into a traditional nanowire MOSFET(TNM).The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off,drain induced barrier lowering and subthreshold swing degradation.Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.     

A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal–oxide semiconductor field-effect transistors (MOSFETs) is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson–Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.     

DAE高效蒸发传热管局部换热系数及其流型的实验研究

一、引言 水平管内强制对流沸腾换热是两相流动与相变换热相耦合的复杂换热过程。一种双侧增强传热的蒸发传热管,简称为DAE管。如图1所示,管内有微细螺旋肋,同时从管外向内轧制了一条大螺纹槽。用DAE管替代具有铝制梅花芯插入物的传热     

基于SVR的智能建筑火灾预警模型设计

火灾信息处理算法的有效性直接决定着建筑火灾自动预警系统的可靠性,开发新型智能火灾预警算法是目前建筑火灾探测预警领域研究的热点之一.针对现有火灾预警算法的不足,研究设计提出一种基于支持向量回归机(SVR)的智能建筑火灾预警算法.为了验证该算法在多传感器复合式建筑火灾预警系统信息处理中的可靠性与优越性,以普通火灾和欧洲试验火历史数据为例,通过Matlab模拟仿真,进行实证分析,并将预警结果与BP神经网络预警结果进行对比分析.研究成果可为新型建筑火灾自动预警系统的设计提供科学的依据.     

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate (DG) MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.     

An improvement to computational efficiency of the drain current model for double-gate MOSFET

As a connection between the process and the circuit design, the device model is greatly desired for emerging devices, such as the double-gate MOSFET. Time efficiency is one of the most important requirements for device modeling. In this paper, an improvement to the computational efficiency of the drain current model for double-gate MOSFETs is extended, and different calculation methods are compared and discussed. The results show that the calculation speed of the improved model is substantially enhanced. A two-dimensional device simulation is performed to verify the improved model. Furthermore, the model is implemented into the HSPICE circuit simulator in Verilog-A for practical application.