| An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor |
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| 作者姓名： | 张立宁 何进 周旺 陈林 徐艺文 |
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| 作者单位： | Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China |
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| 基金项目： | Project supported by National
Natural Science Foundation of China (Grant No.~60876027) and
Research Fund for the Doctoral Program of Higher Education of China
(Grant No.~200800010054). |
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| 摘 要： | This paper studies an oxide/silicon core/shell nanowire MOSFET(OS-CSNM).Through three-dimensional device simulations,we have demonstrated that the OS-CSNM has a lower leakage current and higher I on /I off ratio after introducing the oxide core into a traditional nanowire MOSFET(TNM).The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off,drain induced barrier lowering and subthreshold swing degradation.Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.
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| 关 键 词： | core/shell nanowire nanowire MOSFET |
| 收稿时间： | 7/5/2009 12:00:00 AM |
| 修稿时间： | 8/2/2009 12:00:00 AM |
An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor |
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| Zhang Li-Ning,He Jin,Zhou Wang,Chen Lin and Xu Yi-Wen.An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor[J].Chinese Physics B,2010,19(4):47306-047306. |
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| Authors: | Zhang Li-Ning He Jin Zhou Wang Chen Lin and Xu Yi-Wen |
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| Institution: | Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China |
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| Abstract: | This paper studies an oxide/silicon {c}ore/{s}hell
{n}anowire {M}OSFET (OS-CSNM). Through three-dimensional device
simulations, we have demonstrated that the OS-CSNM has a lower leakage
current and higher $I_{\rm on}/I_{\rm off}$ ratio after introducing
the oxide core into a {t}raditional {n}anowire {M}OSFET (TNM).
The oxide/silicon OS-CSNM structure suppresses threshold voltage
roll-off, drain induced barrier lowering and subthreshold swing
degradation. Smaller intrinsic device delay is also observed in
OS-CSNM in comparison with that of TNM. |
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| Keywords: | core/shell nanowire nanowire MOSFET |
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