Improved thermoelectric performance in p-type Bi_(0.48)Sb_(1.52)Te_3 bulk material by adding MnSb_2Se_4

Bismuth telluride(Bi_2Te_3) based alloys, such as p-type Bi_(0.5)Sb_(1.5)Te_3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_(0.48)Sb_(1.52)Te_3 bulk materials with MnSb_2Se_4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process. The addition of MnSb_2Se_4 to Bi_(0.48)Sb_(1.52)Te_3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb_2Se_4 and Bi_(0.48)Sb_(1.52)Te_3 were observed in the Bi_(0.48)Sb_(1.52)Te_3 matrix. The nanoparticles in the semi-coherent second phase of MnSb_2Se_4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_(0.48)Sb_(1.52)Te_3 by adding an Mn_(0.8)Cu_(0.2)Sb_2Se_4(2mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_(0.48)Sb_(1.52)Te_3 counterpart. Such enhancement of the thermoelectric(TE) performance of p-type Bi_2Te_3 based materials is believed to be advantageous for practical applications.     

Growth and transport properties of topological insulator Bi_2Se_3 thin film on a ferromagnetic insulating substrate

Exchange coupling between topological insulator and ferromagnetic insulator through proximity effect is strongly attractive for both fundamental physics and technological applications. Here we report a comprehensive investigation on the growth behaviors of prototype topological insulator Bi_2Se_3 thin film on a single-crystalline LaCoO_3 thin film on SrTiO_3 substrate, which is a strain-induced ferromagnetic insulator. Different from the growth on other substrates, the Bi_2Se_3 films with highest quality on LaCoO_3 favor a relatively low substrate temperature during growth. As a result, an inverse dependence of carrier mobility with the substrate temperature is found. Moreover, the magnetoresistance and coherence length of weak antilocalization also have a similar inverse dependence with the substrate temperature, as revealed by the magnetotransport measurements. Our experiments elucidate the special behaviors in Bi_2Se_3/LaCoO_3 heterostructures,which provide a good platform for exploring related novel quantum phenomena, and are inspiring for device applications.     

Fundamental and progress of Bi_2Te_3-based thermoelectric materials

Thermoelectric materials,enabling the directing conversion between heat and electricity,are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels.Bi_2Te_3-based alloys are the classical thermoelectric materials working near room temperature.Due to the intensive theoretical investigations and experimental demonstrations,significant progress has been achieved to enhance the thermoelectric performance of Bi_2Te_3-based thermoelectric materials.In this review,we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties.On this basis,we studied the effect of material parameters on thermoelectric properties.Then,we analyzed the features of Bi_2Te_3-based thermoelectric materials,including the lattice defects,anisotropic behavior and the strong bipolar conduction at relatively high temperature.Then we accordingly summarized the strategies for enhancing the thermoelectric performance,including point defect engineering,texture alignment,and band gap enlargement.Moreover,we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method,ball milling,and melt spinning.Lastly,we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi_2Te_3,which will enlighten the enhancement of thermoelectric performance in broader materials     

Spatially resolved gap closing in single Josephson junctions constructed on Bi_2Te_3 surface

Full gap closing is a prerequisite for hosting Majorana zero modes in Josephson junctions on the surface of topological insulators.Previously,we have observed direct experimental evidence of gap closing in Josephson junctions constructed on Bi_2Te_3 surface.In this paper we report further investigations on the position dependence of gap closing as a function of magnetic flux in single Josephson junctions constructed on Bi_2Te_3 surface.     

Effects of Thickness and Temperature on Thermoelectric Properties of Bi_2Te_3-Based Thin Films

Bi_2Te_3 thin films and GeTe/B_2Te_3 superlattices of different thicknesses are prepared on the silicon dioxide substrates by magnetron sputtering technique and thermally annealed at 573 K for 30 min. Thermoelectric(TE)measurements indicate that optimal thickness and thickness ratio improve the TE performance of Bi_2Te_3 thin films and GeTe/B_2Te_3 superlattices, respectively. High TE performances with figure-of-merit(ZT) values as high as 1.32 and 1.56 are achieved at 443 K for 30 nm and 50 nm Bi_2Te_3 thin films, respectively. These ZT values are higher than those of p-type Bi_2Te_3 alloys as reported. Relatively high ZT of the GeTe/B_2Te_3 superlattices at 300-380 K were 0.62-0.76. The achieved high ZT value may be attributed to the unique nano-and microstructures of the films,which increase phonon scattering and reduce thermal conductivity. The results indicate that Bi_2Te_3-based thin films can serve as high-performance materials for applications in TE devices.     

Femtosecond Tm-Ho co-doped fiber laser using a bulk-structured Bi_2Se_3 topological insulator

We experimentally demonstrate a femtosecond mode-locked thulium-holmium(Tm-Ho) co-doped fiber laser incorporating a saturable absorber(SA) based on a bulk-structured bismuth selenide(Bi_2Se_3) topological insulator(TI). The SA was prepared by depositing a mechanically exfoliated Bi_2Se_3 TI layer onto a side-polished optical fiber platform. Unlike high-quality nano-structured Bi_2Se_3 TI-based SA, bulk-structured Bi_2Se_3 with non-negligible oxidation was used as a saturable absorption material for this experimental demonstration due to its easy fabrication process. The saturation power and modulation depth of the prepared SA were measured to be ~ 28.6 W and ~13.4%, respectively. By incorporating the prepared SA into a Tm-Ho co-doped fiber ring cavity, stable soliton pulses with a temporal width of ~ 853 fs could be generated at 1912.12 nm. The 3-dB bandwidth of the mode-locked pulse was measured to be ~4.87 nm. This experimental demonstration reaffirms that Bi_2Se_3 is a superb base material for mid-infrared passive mode-locking even under oxidation.     

Site Preference of Se and Te in Bi_2Se_(3-x)Te_x Thin Films

The ternary topological insulators Bi_2Se_(3-x)Te_x have attracted a great deal of attention due to their exotic physical and chemical properties.While most of the studies focus on the properties of these ternary TIs,limited research was performed to investigate the dynamic atomic stack of its crystal structure.We prepared highquality Bi_2Se_(3-x)Te_x thin films on Ga As(111)B substrates using molecular beam epitaxy,characterized with Raman spectroscopy,x-ray diffraction and photoelectron spectroscopy.It is found that when Se is replaced by Te,the preferred substituting sites are the middle layer at 0x1,and this is also valid for Se substituting Te at 2x3.In the middle region,the substituting atoms prefer to go to the first and the fifth layer.     

Electronic states and spin-filter effect in three-dimensional topological insulator Bi_2Se_3 nanoribbons

We study the electronic band structure, density distribution, and transport of a Bi_2Se_3 nanoribbon. We find that the density distribution of the surface states is dependent on not only the shape and size of the transverse cross section of the nanoribbon, but also the energy of the electron. We demonstrate that a transverse electric field can eliminate the coupling between surface states on the walls of the nanoribbon, remove the gap of the surface states, and restore the quantum spin Hall effects. In addition, we study the spin-dependent transport property of the surface states transmitting from top and bottom surfaces(x-y plane) to the side surfaces(z-x plane) of a Bi_2Se_3 nanoribbon. We find that transverse electric fields can open two surface channels for spin-up and-down Dirac electrons, and then switch off one channel for the spin-up Dirac electron. Our results may provide a simple way for the design of a spin filter based on topological insulator nanostructures.     

Dual-wavelength Bi_2Se_3-based passively Q-switching Nd~(3+)-doped glass all-fiber laser

We demonstrate a dual-wavelength passively Q-switched Nd~(3+)-doped glass fiber laser using a few-layer topological insulator Bi_2Se_3 as a saturable absorber(SA) for the first time, to the best of our knowledge. The laser resonator is a simple and compact linear cavity using two fiber end-facet mirrors. The SA is fabricated by Bi_2Se_3/polyvinyl alcohol composite film. By inserting the SA into the laser cavity, a stable Q-switching operation is achieved with the shortest pulse width and maximum pulse repetition rate of 601 ns and 205.2 kHz,respectively. The maximum average output power and maximum pulse energy obtained are about 6.6 mW and 38.8 nJ, respectively.     

Large Dynamical Axion Field in Topological Antiferromagnetic Insulator Mn_2Bi_2Te_5

The dynamical axion field is a new state of quantum matter where the magnetoelectric response couples strongly to its low-energy magnetic fluctuations.It is fundamentally different from an axion insulator with a static quantized magnetoelectric response.The dynamical axion field exhibits many exotic phenomena such as axionic polariton and axion instability.However,these effects have not been experimentally confirmed due to the lack of proper topological magnetic materials.Combining analytic models and first-principles calculations,here we predict a series of van der Waals layered Mn_2Bi_2Te_5-related topological antiferromagnetic materials that could host the long-sought dynamical axion field with a topological origin.We also show that a large dynamical axion field can be achieved in antiferromagnetic insulating states close to the topological phase transition.We further propose the optical and transport experiments to detect such a dynamical axion field.Our results could directly aid and facilitate the search for topological-origin large dynamical axion field in realistic materials.     

Pressure-Induced Topological and Structural Phase Transitions in an Antiferromagnetic Topological Insulator

Recently,natural van der Waals heterostructures of(MnBi_2 Te_4)_m(Bi_2 Te_3)_n have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states.We systematically investigate both the structural and electronic responses of MnBi_2 Te_4 and MnBi_4 Te_7 to external pressure.In addition to the suppression of antiferromagnetic order,MnBi_2 Te_4 is found to undergo a metalsemiconductor-metal transition upon compression.The resistivity of MnBi_4 Te_7 changes dramatically under high pressure and a non-monotonic evolution of p(T) is observed.The nontrivial topology is proved to persist before the structural phase transition observed in the high-pressure regime.We find that the bulk and surface states respond differently to pressure,which is consistent with the non-monotonic change of the resistivity.Interestingly,a pressure-induced amorphous state is observed in MnBi_2 Te_4,while two high-pressure phase transitions are revealed in MnBi_4 Te_7.Our combined theoretical and experimental research establishes MnBi_2 Te_4 and MnBi_4 Te_7 as highly tunable magnetic topological insulators,in which phase transitions and new ground states emerge upon compression.     

Point-contact tunneling spectroscopy between a Nb tip and an ideal topological insulator Sn-doped Bi_(1.1)Sb_(0.9)Te_2S

The lightly Sn-doped Bi_(1.1)Sb_(0.9)Te_2S is a good material to investigate the pure topological surface state because the bulk bands are far away from the Fermi level. By measuring point-contact tunneling spectra on the topological insulator Bi_(1.08)Sn_(0.02)Sb_(0.9)Te_2S samples with a superconducting Nb tip, we observed the suppression of differential conductance near zero bias, instead of the enhancement due to Andreev reflection on the spectra. The fitting to the measured spectrum results in a superconducting gap of more than 4 meV, and this value is much larger than the superconducting gap of the bulk Nb. The gaped feature exists at temperatures even above the critical temperature of bulk Nb, and is visible when the magnetic field is as large as 9 T at 3 K. We argue that such behaviors may be related to the pressure induced superconductivity by the tip in the junction area, or just some novel phenomena arising from the junction between an s-wave superconductor and an ideal topological insulator.     

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional(3 D) topological insulators(TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs.Here we show that wafer-sized Bi_2 Te_3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO_2/Si substrates by magnetron cosputtering.The SiO_2/Si substrates enable us to electrically tune(Bi_(1-x)Sb_x)_2 Te_3 and Cr-doped(Bi_(1-x)Sb_x)_2 Te_3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states,such as the quantum anomalous Hall effect(QAHE).This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.     

Experimental Realization of an Intrinsic Magnetic Topological Insulator

An intrinsic magnetic topological insulator(TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi_2Te_4, by alternate growth of a Bi_2Te_3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.     

Enhanced thermoelectric performance through homogenously dispersed MnTe nanoparticles in p-type Bi_(0.52)Sb_(1.48)Te_3 nanocomposites

In this work,we report that the thermoelectric properties of Bi_(0.52)Sb_(1.48)Te_3alloy can be enhanced by being composited with Mn Te nano particles(NPs)through a combined ball milling and spark plasma sintering(SPS)process.The addition of Mn Te into the host can synergistically reduce the lattice thermal conductivity by increasing the interface phononscattering between Bi_(0.52)Sb_(1.48)Te_3 and MnTe NPs,and enhance the electrical transport properties by optimizing the hole concentration through partial Mn~(2+)acceptor doping on the Bi~(3+)sites of the host lattice.It is observed that the lattice thermal conductivity decreases with increasing the percentage of Mn Te and milling time in a temperature range from 300 Kto 500 K,which is consistent with the increasing of interfaces.Meanwhile,the bipolar effect is constrained to high temperatures,which results in the figure of merit z T peak shifting toward higher temperature and broadening the z T curves.The engineering z T is obtained to be 20%higher than that of the pristine sample for the 2-mol%Mn Te-added composite at a temperature gradient of 200 K when the cold end temperature is set to be 300 K.This result indicates that the thermoelectric performance of Bi_(0.52)Sb_(1.48)Te_3 can be considerably enhanced by being composited with Mn Te NPs.     

Edge-and strain-induced band bending in bilayer-monolayer Pb_2Se_3 heterostructures

By using scanning tunneling microscope/microscopy(STM/STS), we reveal the detailed electronic structures around the sharp edges and strained terraces of lateral monolayer-bilayer Pd₂Se₃ heterostructures. We find that the edges of such heterostructures are well-defined zigzag type. Band bending and alignment are observed across the zigzag edge, forming a monolayer-bilayer heterojunction. In addition, an n-type band bending is induced by strain on a confined bilayer Pd₂Se₃ terrace. These results provide effective toolsets to tune the band structures in Pd₂Se₃-based heterostructures and devices.     

Gate Tunable Supercurrent in Josephson Junctions Based on Bi_2Te_3 Topological Insulator Thin Films

We report transport measurements on Josephson junctions consisting of Bi_2Te_3 topological insulator(TI) thin films contacted by superconducting Nb electrodes.For a device with junction length L=134 nm,the critical supercurrent I_c can be modulated by an electrical gate which tunes the carrier type and density of the TI film.I_c can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state.In the p-type regime the Josephson current can be well described by a short ballistic junction model.In the n-type regime the junction is ballistic at 0.7 K T 3.8 K while for T 0.7 K the diffusive bulk modes emerge and contribute a larger I_c than the ballistic model.We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions.Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.     

High-Quality Bi_2Te_3 Single Crystalline Films on Flexible Substrates and Bendable Photodetectors

Recently,great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products.Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices,while it is a very challenging work,and usually amorphous,polycrystalline or discontinuous single crystalline films are achieved.Here we demonstrate the direct growth of high-quality Bi_2 Te_3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique.Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film,although amounts of disoriented crystallites are generated due to fast growth rate.By inserting a quartz filter into the growth tube,the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction.Furthermore,flexible Bi_2 Te_3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending,which also confirms the obtained flexible 61 ms suitable for electronic applications.     

Visualizing the in-Gap States in Domain Boundaries of Ultra-Thin Topological Insulator Films

Ultra-thin topological insulators provide a platform for realizing many exotic phenomena such as the quantum spin Hall effect, and quantum anomalous Hall effect. These effects or states are characterized by quantized transport behavior of edge states. Experimentally, although these states have been realized in various systems,the temperature for the edge states to be the dominating channel in transport is extremely low, contrary to the fact that the bulk gap is usually in the order of a few tens of milli-electron volts. There must be other in-gap conduction channels that do not freeze out until a much lower temperature. Here we grow ultra-thin topological insulator Bi_2Te_3 and Sb_2Te_3 films by molecular beam epitaxy and investigate the structures of domain boundaries in these films. By scanning tunneling microscopy and spectroscopy we find that the domain boundaries with large rotation angles have pronounced in-gap bound states, through which one-dimensional conduction channels are suggested to form, as visualized by spatially resolved spectroscopy. Our work indicates the critical role played by domain boundaries in degrading the transport properties.     

Controlled vapor growth of 2D magnetic Cr_2Se_3 and its magnetic proximity effect in heterostructures

Two-dimensional(2 D) magnetic materials have aroused tremendous interest due to the 2 D confinement of magnetism and potential applications in spintronic and valleytronic devices. However, most of the currently 2 D magnetic materials are achieved by the exfoliation from their bulks, of which the thickness and domain size are difficult to control, limiting the practical device applications. Here, we demonstrate the realization of thickness-tunable rhombohedral Cr_2Se_3 nanosheets on different substrates via the chemical vapor deposition route. The magnetic transition temperature at about 75 K is observed. Furthermore, van der Waals heterostructures consisting of Cr_2Se_3 nanosheets and monolayer WS_2 are constructed.We observe the magnetic proximity effect in the heterostructures, which manifests the manipulation of the valley polarization in monolayer WS_2. Our work contributes to the vapor growth and applications of 2 D magnetic materials.