Experimental Realization of an Intrinsic Magnetic Topological Insulator

An intrinsic magnetic topological insulator(TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi_2Te_4, by alternate growth of a Bi_2Te_3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.     

MIL⁃53(Al)催化甲基氯硅烷的歧化机理

利用B3LYP/6?311++G(3df,2pd)方法计算了MIL?53(Al)的3个位点催化甲基氯硅烷以制备二甲基二氯硅烷的活性差异,并对反应通道、能量、过渡态虚振模式、内禀反应坐标(IRC)、关键原子间距的变化等进行了分析和讨论,得出了一致的结论:1~3号活性位催化的主反应速控步的活化能分别为157.15、155.31和123.44 kJ·mol-1;副反应速控步的活化能分别为206.48、214.87和166.07 kJ·mol-1。MIL?53(Al)能顺利催化歧化反应的原因在于其催化中心Al—O—H上的Br?nsted酸H,活性的差异来源于其配位环境的不同。     

基于LiF和NaF的超宽带红外吸收器

设计了一种基于LiF和NaF材料的光栅型超宽带红外吸收器,并采用频域有限差分法对其吸收特性进行了研究。研究结果表明,单独采用LiF(或NaF)和电介质材料构成的光栅型吸收器都具有较宽的吸收带,但其吸收带处于不同的红外波段。同时采用LiF、NaF及电介质材料构成的光栅型吸收器可以把这两个吸收带衔接起来。通过优化参数,在入射波长为15~45μm、入射角度为0°~80°的范围内,吸收器的吸收率达到80%以上,实现了宽带吸收。结构中复合层的层数对吸收率有最大的影响,电介质层的厚度对吸收率的影响较小。     

惰化剂粒径对铝粉火焰传播特性影响的实验研究

为探索惰化剂粒径对可燃工业粉尘火焰传播特性的影响，通过建立竖直粉尘燃烧管道实验平台，在碳酸氢钠质量分数为30%的惰化条件下，就碳酸氢钠粒径对铝粉燃烧火焰传播特性的影响进行了实验研究。结果表明:平均粒径为30 μm的碳酸氢钠粉体对平均粒径为15 μm的铝粉的火焰传播速度具有较好的抑制作用，惰性粉体与可燃工业粉尘应存在粒度匹配效应；碳酸氢钠粉体对铝粉火焰温度的惰化抑制效果与其粒径呈反比关系；碳酸氢钠粉体会减小铝粉火焰预热区厚度，预热区厚度随碳酸氢钠粒径的增加先减小后增大。此外，分析了碳酸氢钠粒径对铝粉火焰传播特性影响的作用机理。     

布里渊动态光栅原理及其在光纤传感中的应用

自从2007年布里渊动态光栅被首次提出用于实现光存储以来,该技术得到了国际上的广泛关注和研究.布里渊动态光栅本质上是由相干声波场激发的折射率光栅,一般情况下两束抽运光(频率差等于光纤的布里渊频移)以相同的偏振态从光纤两端注入到光纤中,通过受激布里渊散射效应激发出相干声波场,即形成布里渊动态光栅.光纤布里渊动态光栅因具有全光产生、参数灵活可控的优点,已被广泛研究应用于光纤传感、光纤特性表征、光存储、全光信号处理、微波光子学和高精度光谱分析等.本文分析布里渊动态光栅产生和探测原理,重点探讨在高性能分布式光纤传感上的应用,这些应用包括高灵敏度温度和应变分布式传感、温度和应变同时解调、分布式横向压力传感、分布式静压力(气压或液压)传感、高空间分辨率分布式传感和高精度光谱分析.     

Xe54+离子与Xe原子碰撞过程中的辐射电子俘获及退激发辐射的理论研究

基于多组态Dirac-Fock理论方法和冲量近似, 对Xe⁵⁴⁺与Xe在197 MeV/u碰撞能量下, 炮弹离子的俘获及退激发过程进行了理论研究. 计算了炮弹离子从中性靶原子俘获一个电子到nl (n=1, 2, 3, 4, 5; l=s, p, d) 轨道上的辐射电子俘获截面和相应的辐射光子能量, 以及俘获末态退激发辐射跃迁的能量和概率. 结合这些计算结果, 进一步模拟了碰撞产生的炮弹离子的退激发X射线谱的结构, 并与兰州重离子加速器装置上的最新实验观测结果进行了比较, 符合得很好.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

静电激励MEMS微结构吸合电压尺寸效应研究

基于应变梯度弹性理论,研究了静电激励MEMS微结构吸合电压的尺寸效应.利用最小势能原理分别推导出含尺寸效应的一维梁模型和二维板模型的高阶控制方程.采用广义微分求积法和拟弧长算法对控制方程进行了数值求解.结果表明,随着结构尺寸的降低,新模型所预测的归一化的吸合电压呈非线性增长,表现出尺寸效应(特别是当结构尺寸与内禀常数在...     

拓扑绝缘体表面态的STM研究

文章主要介绍了利用扫描隧道显微镜对拓扑绝缘体表面态进行的一系列研究工作,包括拓扑绝缘体表面态的电子驻波以及拓扑表面态的朗道量子化现象.这些工作对于拓扑绝缘体基本性质的确立以及深入理解具有十分重要的意义.