Experimental Realization of an Intrinsic Magnetic Topological Insulator

An intrinsic magnetic topological insulator(TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi_2Te_4, by alternate growth of a Bi_2Te_3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.     

氢吸附导致的SiC表面金属化

文章报道了最近对氢吸附导致β-SiC（001）-32表面金属化的研究结果.提出了β-SiC（001）-32表面金属化的一种新机制：通过形成氢桥键（Si-H-Si 复合结构）形成表面n型掺杂.该复合结构通过氢桥键增强了沟槽底部的弱结合的Si-Si二聚体,并向体系的导带提供电子.     

Role of Ga-doping in ironben gallium alloy clusters

The structural and magnetic properties of Fe_n-mGa_m (n=3～6, m=0～2; n=13, m=0～3) alloy clusters have been studied using density functional theory. The substitutional doping is favourable for small clusters with up to six atoms at low Ga concentration and substitutional Ga atoms in 13-atom clusters prefer surface sites. The Ga-doping generally could reduce the energetic stability but enhance the electronic stability of Fe clusters, along with a decrease of the local magnetic moments of Fe atoms around Ga dopants. These findings provide a microscopic insight into Fe-Ga alloys which are well-known magnetostriction materials.     

有散射区和Andreev反射面的单通道导体的导纳

采用分立势模型和有效散射矩阵方法, 通过引入正常导体-超导体复合介观系统的局部态密度以及发射率和入射率，计算了有散射区和Andreev反射面的单通道导体的导纳.     

硫族化合物半导体CdSe,CdTe和SnSe的电子结构

本文在局域密度近似下利用从第一原理出发的标量相对论(scalar-relativistic)自洽LMTO-ASA方法,计算了CdSe,CdTe和SnSe的能带结构。计算中在高对称间隙点引入“空球”,晶体势的非球对称分量也得到了适当的考虑。计算结果与其它非自洽计算结果及实验结果进行了比较和讨论。 关键词：     

Electronic properties of SnTe-class topological crystalline insulator materials

The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices.It also stimulates the explorations of more topological states of matter.Topological crystalline insulator is a new topological phase,which combines the electronic topology and crystal symmetry together.In this article,we review the recent progress in the studies of SnTe-class topological crystalline insulator materials.Starting from the topological identifications in the aspects of the bulk topology,surface states calculations,and experimental observations,we present the electronic properties of topological crystalline insulators under various perturbations,including native defect,chemical doping,strain,and thickness-dependent confinement effects,and then discuss their unique quantum transport properties,such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions.The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.     

纳米碳管电子结构和键合特性的第一原理研究

利用第一原理方法对一系列尺寸变化的单层纳米碳管电子结构进行了研究,得到了总态密度和态密度随碳管半径R的变化情况与实验结果完全一致,Fermi能级处态密度值随着管径R的增大而减小,说明纳米管的化学活性随着管径的增大而增强。碳管中C-C之间的键合为2s和2p价电子混合而成的弯曲的σ,π键,随着管径R的增大,化学键的弯曲度逐渐减小,C-C之间的键合作用和结合能逐渐增强,电荷密度和对应的势场也逐渐减弱。这些结果表明管径较小的纳米碳管在复合材料的合成中具有一定的优势。     

掺氟碳纳米管电子性质的研究

利用第一原理方法讨论了掺氟碳纳米管的电子性质.与纯碳管相比,掺氟碳纳米管也能稳定存在,并具有更好的场发射性质.这是原子层次的材料设计.     

Role of Ga-doping in iron-gallium alloy clusters

The structural and magnetic properties of Fe_n-m Ga_m （n=3 ～ 6,m=0 ～ 2;n=13,m=0 ～ 3） alloy clusters have been studied using density functional theory.The substitutional doping is favourable for small clusters with up to six atoms at low Ga concentration and substitutional Ga atoms in 13-atom clusters prefer surface sites.The Ga-doping generally could reduce the energetic stability but enhance the electronic stability of Fe clusters,along with a decrease of the local magnetic moments of Fe atoms around Ga dopants.These findings provide a microscopic insight into Fe-Ga alloys which are well-known magnetostriction materials.     

单壁碳纳米管中的金属-半导体转变与对称性

报道了最近作者对受压扶手椅形单壁碳纳米管中的金属-半导体转变机理的理论研究。这种转变在两种因素的共同作用下得以发生，即外加压力造成碳纳米管镜像对称破缺，以及被压碳纳米管两侧原子发生成键相互作用．作者还进一步揭示了发生这种转变的普遍机制：只要将单壁碳纳米管中两套原来等价的子晶格变得可以区分(对称性破缺)，在费米能附近就会产生能隙．