Experimental Realization of an Intrinsic Magnetic Topological Insulator

An intrinsic magnetic topological insulator(TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi_2Te_4, by alternate growth of a Bi_2Te_3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.     

压力诱导酌拓扑绝缘体化合物Bi2Te3常压相的超导性

通过高压电阻测量,发现了拓扑绝缘体化合物BizTe3压力诱导的超导性,在3-6GPa的压力范围内,超导临界温度L约为3K．高压下原位同步辐射的结果证明这个超导相来源于常压相结构．通过霍尔效应的测量,发现超导的Bi2Te3样品的载流子为P型．对高压同步辐射结果Reitveld精修得到的晶格参数和原子位置,并以此进行第一性...