不同衬底上Pb(Zr0.52Ti0.48)O3择优取向铁电薄膜的制备和研究

通过MOD法在Si(100)和Pt(111)/Ti/SiO₂/Si基片上制备出LaNiO₃ ( LNO)薄膜.再通过修 正的Sol-gel法，在Pt(111)/Ti/SiO₂/Si,LNO/Si(100)和LNO/Pt/Ti/SiO_{2< /sub>/Si三种衬底上 制备出具有择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜. 经XRD分析表明，L NO薄膜具有(100)择优取向的类钙钛矿结构；PZT薄膜均具有钙钛矿结构，且在Pt(111)/Ti/S iO2/Si衬底上的薄膜以(110)择优取向，在LNO/Pt/Ti/SiO2/Si和LN O/Si(100)衬底上的 薄膜以(100)择优取向.经场发射SEM分析和介电、铁电性能测试表明，在LNO/Si和LNO/Pt/Ti /SiO2/Si衬底上的PZT薄膜的平均粒径、介电常数以及剩余极化强度均比以Pt/T i/SiO2/Si为衬底的薄膜大. 关键词： 3}薄膜')" href="#">LaNiO₃薄膜 PZT铁电薄膜 择优取向 剩余极化强度     

La0.3Sr0.7TiO3模板层对Pb(Zr0.5Ti0.5)O3薄膜的铁电性能增强效应的研究

通过sol-gel法在si(111)基片上分别制备了LaNiO3(LNO)底电极和LaNiO3/Sr0.7TiO3(LNO/LSTO)底电极.然后采用sol-gel方法,在两种衬底上分别制备了Pb(Zr0.5Ti0.5)O3(PZT)铁电薄膜.XRD分析表明,两种PZT薄膜均具有钙钛矿结构,且在LNO底电极上的PZT薄膜呈(100)择优取向,而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明,相对LNO衬底上制备的PZT薄膜,在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强,同时矫顽场也增大.介电常数和漏电流的测试表明,LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流.     

含Bi层状钙钛矿型铁电薄膜在金属电极上的非c轴取向生长研究

用sol-gel工艺直接在 (111)Pt/Ti/SiO2/Si衬底上分别制备了62%a/b轴择优、65%(014)/(104) 择优、高c轴择优取向生长的 Bi3.15Nd0.85Ti3O12 (BNdT) 铁电薄膜.发现BNdT薄膜的铁电、介电和压电性能强烈依赖于晶粒的择优取向,从而证实BNdT中自发极化矢量Ps靠近a轴.透射电镜观察表明,非c轴取向薄膜中的柱状晶粒从底电极Pt表面一直延伸到薄膜上表面,而c轴择优取向薄膜中的晶粒细小且主要呈等轴状.讨论了含Bi层状钙钛矿型铁电薄膜在金属电极上的择优取向生长机制.     

La0.3Sr0.7TiO3模板层对Pb(Zr0.5Ti0.5)O3薄膜的铁电性能增强效应的研究

通过sol-gel法在Si (111) 基片上分别制备了LaNiO₃(LNO)底电极和LaNiO₃/La_0.3Sr_0.7TiO₃ (LNO/LSTO)底电极.然后采用sol-gel 方法，在两种衬底上分别制备了Pb (Zr_0.5Ti_0.5)O₃ (PZT)铁电薄膜.XRD分析表明，两种PZT薄膜均具有钙钛矿结构，且在LNO底电极上的PZT薄膜呈(100) 择优取向，而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明，相对LNO衬底上制备的PZT薄膜，在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强，同时矫顽场也增大.介电常数和漏电流的测试表明，LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流. 关键词： PZT薄膜 铁电性 漏电流 0.3Sr_0.7TiO₃')" href="#">La_0.3Sr_0.7TiO₃     

(111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究

选用不同浓度的Pb(Zr0.52Ti0.48)O3溶胶,用Sol-gel法在Pt/Ti/SiO2/Si基片上沉积一层厚度不同的Pb(Zr0.52Ti0.48)O3(PZT52)过渡层,经400℃烘烤、550℃退火等程序后,再用Sol-gel法在PZT52过渡层上沉积Pb(Zr0.52Ti0.48)O3薄膜.XRD分析表明,有PZT52过渡层的Pb(Zr0.52Ti0.48)O3薄膜具有(111)择优取向的钙钛矿结构,且随着过渡层厚度的增加,Pb(Zr0.52Ti0.48)O3薄膜的(111)择优取向程度越高.SEM分析表明,当PZT52过渡层的厚度达到14nm以上,Pb(Zr0.52Ti0.48)O3薄膜结晶程度得到明显改善,平均晶粒尺寸大大增加.介电、铁电性能测试表明,与没有过渡层的Pb(Zr0.52Ti0.48)O3薄膜相比,有PZT52过渡层的Pb(Zr0.52Ti0.48)O3薄膜具有较大的介电常数和剩余极化强度,而介电损耗则较小.     

(111)取向(Pb,La)TiO3铁电薄膜中90°纳米带状畴与热释电性能的研究

采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能,结果表明PLT薄膜为(111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM)分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴,电畴的极化为首尾相接的低能量的排列方式,带状畴的宽度为20-60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365、介电损耗tgδ为0.02,热释电系数γ为2.18×10-8C·(cm2·K)-1,可以满足制备非制冷红外探测器的需要.     

不同晶化工艺对非晶PZT纳米薄膜形核取向生长机理的影响

射频磁控溅射法室温下在Pt/Ti/SiO2/Si上制备非晶Pb(Zr048Ti052)O3薄膜，非晶PZT薄膜分别经常规炉退火(CFA)处理和快速热退火(RTA)处理晶化为（100），（111）不同择优取向的多晶薄膜. 采用x射线衍射测定了薄膜相组分、择优取向度；用原子力显微镜和压电响应力显微镜观察了薄膜表面形貌，以及对应区域由自发极化形成的铁电畴像，观察了不同取向薄膜的电畴分布特征. 结果表明，RTA晶化过程钙钛矿结构PZT结晶主要以PZT/Pt界面处的PtPb化合物为成核点异质形核并类似外延的结晶生长，沿界面结晶速率远大于垂直膜面结晶速率，而CFA晶化样品成核发生在膜内杂质缺陷处，以同质成核为主. 不同的成核机理导致了不同晶面择优取向生长. 关键词： PZT薄膜 结晶 形核 力显微技术     

含Bi层状钙钛矿型铁电薄膜在金属电极上的非c轴取向生长研究

用sol—gel工艺直接在（111）Pt／Ti／SiO2／Si衬底上分别制备了62％a／b轴择优、65％（014）／（104）择优、高c轴择优取向生长的Bi3.15Nd0.85Ti3O12（BNdT）铁电薄膜。发现BNdT薄膜的铁电、介电和压电性能强烈依赖于晶粒的择优取向。从而证实BNdT中自发极化矢量P，靠近a轴。透射电镜观察表明，非c轴取向薄膜中的柱状晶粒从底电极Pt表面一直延伸到薄膜上表面。而c轴择优取向薄膜中的晶粒细小且主要呈等轴状。讨论了含Bi层状钙钛矿型铁电薄膜在金属电极上的择优取向生长机制。     

化学溶液法制备的Pb(Mg1/3 Nb2/3)O3-PbTiO3薄膜的光学性能

用化学溶液方法在宝石衬底及有LaNiO3缓冲层的Pt/TiO2/SiO2/Si衬底上制备了92%Pb(Mg1/3 Nb2/3)O3-8%PbTiO3(PMNT)薄膜,X射线衍射测试结果表明:在有LaNiO3缓冲层的Pt/TiO2/SiO2/Si衬底上制备的PMNT薄膜几乎是纯钙钛矿相,且薄膜呈现(110)择优取向.通过对Pt/TiO2/SiO2/Si衬底上的PMNT薄膜在2.5-12.6μm波长范围内的红外椭圆偏振光谱测试,并拟合得到了PMNT薄膜在2.5-12.6μm波长范围内的光学常数(n和k),通过对宝石衬底上的PMNT薄膜在200-1100nm波长范围内的可见-紫外透过率测试,并拟合得到了PMNT薄膜在200-1100nm波段的光学常数(n和k)和吸收系数α,进而推导出PMNT薄膜的禁带宽度为4.03eV.     

用改进的sol-gel法制备锆钛酸铅薄膜及其物相转化的研究

利用改进的solgel法,在Pt/Ti/SiO2/Si衬底上制备了PbZr0.5Ti0.5O3(PZT50/50)薄膜.采用了一种新的方式,从同一前驱体溶液得到了厚度各异的单一退火层.研究了薄膜的结构和性质随单层退火厚度的改变而发生的变化,发现随着单一退火层厚度的降低,薄膜(111)取向的程度增大,同时薄膜的剩余极化和介电常量也逐渐增高.当单一退火层厚度降低到约为40nm时,可得到高度(111)择优取向的PZT薄膜.从薄膜成核机理的基础上讨论了薄膜结构变化的内在因素,认为随单一退火层厚度的增加薄膜由单一的 关键词：     

Point defects on graphene on metals

Understanding the coupling of graphene with its local environment is critical to be able to integrate it in tomorrow's electronic devices. Here we show how the presence of a metallic substrate affects the properties of an atomically tailored graphene layer. We have deliberately introduced single carbon vacancies on a graphene monolayer grown on a Pt(111) surface and investigated its impact in the electronic, structural, and magnetic properties of the graphene layer. Our low temperature scanning tunneling microscopy studies, complemented by density functional theory, show the existence of a broad electronic resonance above the Fermi energy associated with the vacancies. Vacancy sites become reactive leading to an increase of the coupling between the graphene layer and the metal substrate at these points; this gives rise to a rapid decay of the localized state and the quenching of the magnetic moment associated with carbon vacancies in freestanding graphene layers.     

基于Matlab分析负荷对多联机IPLV的影响

多联机有其特殊的优点,但是不同部分负荷的组合对IPLV的影响仍需进一步研究。文中建立IPLV与部分负荷的相关公式,运用MATLAB软件分析不同卸载级负荷与IPLV的关系,从而确定不同部分负荷的最优组合。     

Note on duality on polarized symplectic manifolds

In this note we use some of the results of [3] to derive a general duality theorem for the cohomologies of foliated structures on a manifold. The result is applied to the special case of a symplectic manifold M on which the foliation is given by a complex polarization F in the sense of geometric quantization. We obtain, for example, a rigorous proof of the fact that for a smooth function ƒ on M whose Hamiltonian vector field leaves F invariant, the spectrum of the corresponding prequantization operator v(ƒ) coincides with the spectrum of its transpose, under the above duality. This latter result was obtained by Simms in [12] under certain hypotheses. Proofs of the validity of those hypotheses are now available in the literature; cf. [3] and [7].     

Space-charge effects on multipactor on a dielectric

Analyzes the effects of space charge shielding on the steady state of a multipactor discharge on a dielectric. Analytic methods are used to obtain an exact function for the potential in the discharge, assuming a Maxwellian distribution of emitted electrons. An equation for the amount of power deposited on the dielectric by the multipactoring electrons, for a given saturation level, is given. A simple method for obtaining the saturation level, for a given material, is obtained     

Remarks on KdV-type flows on star-shaped curves

We study the relation between the centro-affine geometry of star-shaped planar curves and the projective geometry of parametrized maps into RP¹. We show that projectivization induces a map between differential invariants and a bi-Poisson map between Hamiltonian structures. We also show that a Hamiltonian evolution equation for closed star-shaped planar curves, discovered by Pinkall, has the Schwarzian KdV equation as its projectivization. (For both flows, the curvature evolves by the KdV equation.) Using algebro-geometric methods and the relation of group-based moving frames to AKNS-type representations, we construct examples of closed solutions of Pinkall’s flow associated with periodic finite-gap KdV potentials.