Graded index broadband antireflection coating prepared by glancing angle deposition for a high-power laser system

This paper reports that SiO₂ is selected to fabricate broadband antireflection (AR) coatings on fused silica substrate by using glancing angle deposition and physical vapour deposition. Through accurate control of the graded index of the SiO₂ layer, transmittance of the graded broadband AR coating can achieve an average value of 98% across a spectral range of 300--1850~nm. Moreover, a laser-induced damage threshold measurement of the fabricated AR coating is performed by using a one-on-one protocol according to ISO11254-1, resulting in an average damage threshold of 17.2~J/cm$^{2}$.     

含Bi层状钙钛矿型铁电薄膜在金属电极上的非c轴取向生长研究

用sol—gel工艺直接在（111）Pt／Ti／SiO2／Si衬底上分别制备了62％a／b轴择优、65％（014）／（104）择优、高c轴择优取向生长的Bi3.15Nd0.85Ti3O12（BNdT）铁电薄膜。发现BNdT薄膜的铁电、介电和压电性能强烈依赖于晶粒的择优取向。从而证实BNdT中自发极化矢量P，靠近a轴。透射电镜观察表明，非c轴取向薄膜中的柱状晶粒从底电极Pt表面一直延伸到薄膜上表面。而c轴择优取向薄膜中的晶粒细小且主要呈等轴状。讨论了含Bi层状钙钛矿型铁电薄膜在金属电极上的择优取向生长机制。     

含Bi层状钙钛矿型铁电薄膜在金属电极上的非c轴取向生长研究

用sol-gel工艺直接在 (111)Pt/Ti/SiO2/Si衬底上分别制备了62%a/b轴择优、65%(014)/(104) 择优、高c轴择优取向生长的 Bi3.15Nd0.85Ti3O12 (BNdT) 铁电薄膜.发现BNdT薄膜的铁电、介电和压电性能强烈依赖于晶粒的择优取向,从而证实BNdT中自发极化矢量Ps靠近a轴.透射电镜观察表明,非c轴取向薄膜中的柱状晶粒从底电极Pt表面一直延伸到薄膜上表面,而c轴择优取向薄膜中的晶粒细小且主要呈等轴状.讨论了含Bi层状钙钛矿型铁电薄膜在金属电极上的择优取向生长机制.