不同衬底上Pb(Zr0.52Ti0.48)O3择优取向铁电薄膜的制备和研究

通过MOD法在Si(100)和Pt(111)/Ti/SiO₂/Si基片上制备出LaNiO₃ ( LNO)薄膜.再通过修 正的Sol-gel法，在Pt(111)/Ti/SiO₂/Si,LNO/Si(100)和LNO/Pt/Ti/SiO_{2< /sub>/Si三种衬底上 制备出具有择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜. 经XRD分析表明，L NO薄膜具有(100)择优取向的类钙钛矿结构；PZT薄膜均具有钙钛矿结构，且在Pt(111)/Ti/S iO2/Si衬底上的薄膜以(110)择优取向，在LNO/Pt/Ti/SiO2/Si和LN O/Si(100)衬底上的 薄膜以(100)择优取向.经场发射SEM分析和介电、铁电性能测试表明，在LNO/Si和LNO/Pt/Ti /SiO2/Si衬底上的PZT薄膜的平均粒径、介电常数以及剩余极化强度均比以Pt/T i/SiO2/Si为衬底的薄膜大. 关键词： 3}薄膜')" href="#">LaNiO₃薄膜 PZT铁电薄膜 择优取向 剩余极化强度

Preparation and study on epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric films on different substrates

LaNiO-3 (LNO) thin films were successfully prepared on Si (100) and Pt/Ti/SiO-2/Si substrates by metalorganic decomposition (MOD). Pb(Zr-~0.52 Ti-~0.48 )O-3(PZT) thin films were prepared on the Pt(111)/Ti/SiO-2/Si, LNO/Si(100) and LNO/Pt(111)/Ti/SiO-2/Si substrates by a modified sol-gel method. The crystallographic orientation and the microstructure of the resulting PZT thin films on the different substrates were characterized by x-ray diffraction and scanning electron microscopy. The dielectric and ferroelectric properties of PZT films on the different substrates are discussed. The PZT films deposited on LNO/Pt/Ti/SiO-2/Si and LNO/Si(100) substrates show strong 100] preferred orientation, while the films deposited on Pt/Ti/SiO-2/Si substrates show 110] orientations. PZT films on LNO/Pt/Ti/SiO-2/Si and LNO/Si(100) substrates have larger average grain sizes, dielectric constant and remnant polarizations compared with those grown on Pt/Ti/SiO-2/Si substrates.