In替代(La2/3Ca1/3)(Mn(3-2x)/3In2x/3)O3体系巨磁电阻效应的研究

采用固态反应法制备了In替代的(La_2/3Ca_1/3)(Mn_(3-2x)/3In_2x/3)O₃(x=0.00，0.10，0.15)体系.通过测量其零场和1.6T磁场下样品的电阻-温度关系以及一定温度下磁电阻率与磁场的关系.发现随In³⁺替代量的增加其磁电阻峰和电阻峰均向低温方向移动，同时巨磁电阻效应减弱，磁电阻峰也展宽.这是由于In³⁺替代量的变化，引起 关键词：     

用脉冲激光方法在Si(100)上沉积的Cox-C1-x颗粒膜及其磁电阻效 应

利用脉冲激光沉积方法在Si(100)上制备了Co_x-C_1-x颗粒膜，并研 究了其正磁电阻 效应.实验结果表明，样品在室温下的正磁电阻效应要远远高于低温下的正磁电阻效应；Co _0.02-C_0.98样品具有最大的室温正磁电阻效应，在外加磁场B=1T时 ，其磁电阻 率MR=22%；随着Co含量的增加，Co_x-C_1-x颗粒膜的正磁电阻效应呈 减小趋势.样品 的MR-B的曲线与传统的多 关键词： 正磁电阻效应 x-C_1-x颗粒膜')" href="#">Co_x-C_1-x颗粒膜 脉冲激光沉积     

(La_(1-x)Ce_x)_(2/3)Ca_(1/3)MnO_3体系的结构和输运性质研究

对Ce掺杂锰氧化物 (La1 -xCex) 2 3Ca1 3MnO3(x =0— 1.0 )多晶样品的结构和输运性质系统研究的结果 .实验表明 ,在低掺杂浓度下 ,样品呈现完整的正交钙钛矿结构 ;随掺杂浓度的增加 ,有少量CeO2 杂相出现 ,同时伴随有Ce3 和Ce4 离子两种价态的涨落和Mn2 Mn3 Mn4 混合价态的共存 ,Ce掺杂导致的体系无序度增加 ,使得绝缘体 -金属 (I M)和顺磁 -铁磁 (PM FM)转变温度向低温方向移动 .有趣的是 ,Ce掺杂样品的电阻率测量I M转变峰值温度TIM 较PM FM转变温度Tc 为高 ,其差值ΔT(=TIM -Tc)随Ce掺杂含量的增加而增加 ,最大差值ΔT达 5 0K .各样品的磁电阻则随温度的降低而增加 ,在Tc 附近MR达到最大值 ,且随Ce掺杂含量增加Tc 附近的MR最大值迅速增加 ,达到 10 4 %以上 ,表现出很强的庞磁电阻效应 .在x≥ 0 .7时 ,磁电阻效应则表现出反常减小 .整体上而言 ,各样品的磁特性与输运行为间有较强的关联 ,电输运特性可用双交换作用模型进行很好的解释 ,在高温区满足热激活模型 .最后 ,在Ce掺杂对Tc 和MR的影响机理方面进行了初步讨论 .     

液氦温区La2/3Ca1/3Mn1-xCuxO3(x=0.15)体系的磁电阻弛豫效应

实验上研究了液氦温区La2/3Ca1/3Mn1-xCuxO3(x=0.15)单相多晶样品给定磁场下的电阻随时间的变化,发现磁电阻随时间变化并非遵从对数规律而是呈指数型变化行为.对这一指数型磁电阻弛豫行为的可能起因进行了讨论,指出这是与Mn位上Cu掺杂将额外磁性杂质引入到样品中有关.     

La2/3(Ca1-xMgx)1/3MnO3(0≤x≤60%)系统中不寻常的超大磁电阻

用溶胶-凝胶法并经过1450℃后处理而制备出名义组分为La2/3(Ca1-xMgx)1/3MnO3 (0≤x≤60%)多晶样品.磁化测量表明,除磁转变温度因Mg掺杂而稍有降低外,磁性质整体上和不含Mg样品无本质上的差别.未加磁场下阻温关系测量表明,即使Mg含量高达60%,实验上仍观察到绝缘体到金属的转变.特别有意义的结果是,适当的Mg掺杂可明显提高转变温度附近的磁电阻效应,例如,在Mg掺杂量为30～40%的样品中,1T磁场下观察到的磁电阻甚至比不含Mg样品在5T磁场下得到的值还要大.     

磁场增强的La2/3 Sr1/3 MnO3有机半导体界面载流子注入

文章作者制备了以多种π-共轭有机半导体（orgnanic semincondutor,简称OSEC）为中间层,La2/3Sr1/3MnO3（LSMO）和另一铁磁或非磁性金属为电极的有机二极管,测量了器件的磁致电阻和磁电致发光效应.器件显示了与LSMO电极类似的负磁电阻效应,但是它的电阻变化比LSMO电极本身的变化大3个数量级,而且器件还有正的磁电致发光效应.文章作者认为,这些磁场效应源于磁场作用下LSMO费米能级的异常移动,导致载流子在LSMO-OSEC界面注入的增强。     

Ag掺杂La-K-Mn-O非均匀多晶体系的电磁性质

用溶胶-凝胶方法制备了1/mAg₂O-La_0.833K_0.167MnO₃ (LKMO/Ag)系列样品，其中1/m代表Ag₂O和La_0.833K_0.167MnO₃(LKMO)的摩尔比，m=32，16，8，4和2. 研究了此系列样品的结构、磁性和输运特性. X射线衍射实验表明，LKMO/Ag是一个非均匀的系统，样品由磁性的钙钛矿相LKMO和金属Ag相组成. 由于Ag相的加入，在室温条件下，磁电阻效应明显增强. 在300 K, 0.5 T磁场下，m=4样品的磁电阻可以达到32%；5.5 T磁场下，其磁电阻可达64%. 而单纯的LKMO样品在相同条件下的磁电阻分别为10%和35%. 在低温下，加Ag样品的磁电阻效应反而减小，样品含Ag越多，磁电阻效应越小. 用非本征磁电阻(包括自旋极化隧穿和自旋相关散射)和本征磁电阻在不同温区对总磁电阻的相对贡献对此系列样品的磁电阻现象作了定性的解释. 关键词： 自旋极化隧穿 自旋相关散射 低场磁电阻 高场磁电阻     

La2/3 Ca1/3 MnO3中绝缘体-金属相变与CMR效应

我们研究了超大磁阻材料La2/3Ca1/3MnO3的磁电特性,发现由电阻测量得到的绝缘体－金属相变与由磁化曲线得到的顺磁－铁磁相变温区完全一致,均随磁场的增强推向高温区。结果证明绝缘体－金属相变起因于磁序的变化,并伴随着越大磁电阻效应的CMR的发生。     

钙钛矿锰氧化物La1－xTexMnO3(x=0.04, 0.1)的两类磁电阻现象

La1-xTexMnO3(x=004,01)是一种具有钙钛矿结构的电子掺杂型锰氧化物.实验结果表明：在这种锰氧化物中同时存在庞磁阻（CMR）效应和低场磁电阻（LFMR）效应.在整个实验温度范围（5—300K），LFMR随温度升高而发生了如下变化：出现—消失—出现，在LFMR消失的温区又恰好能观察到明显的CMR.对其原因给予了解释. 关键词： 庞磁电阻 低场磁电阻 La-Te-Mn-O     

Mn位上Cu掺杂对La-Ca-Mn-O系统液氮温度磁电阻效应的影响

实验研究了Mn位上Cu掺杂对La_2/3Ca_1/3Mn_1-xCu_xO_y单相块材液氮温度磁电阻效应的影响.结果表明，在最佳掺杂(x≈0.15)的情况下，样品表现出非常明显的磁电阻效应，且磁电阻的主要变化发生在1T以下的低磁场下；当磁场增加到6T时，该样品的磁电阻效应比高达约5×10⁴%，相对于偏离最佳掺杂的样品，提高了近三个数量级. 关键词：     

Possible quantum critical point in La(2/3)Ca(1/3)Mn(1-x)Ga x O3

We study the magnetic ground state in La(2/3)Ca(1/3)Mn(1-x)Ga x O3 manganites, where a quantum critical point (QCP) has been theoretically predicted. The metallic ferromagnetic ground state for low Ga doping breaks down for x > or = 0.11, an insulating state being established at low temperatures. Long-range ferromagnetism coexists with short-range magnetic correlations in the concentration range 0.11 < or = x < or = 0.145 while only the short-range correlations survive for x > or = 0.16. We discuss the implications of such a QCP to the physics of manganites and compare to other QCP systems.     

Nanoscale multiphase separation at La(2/3)Ca(1/3)MnO3/SrTiO3 interfaces

55Mn nuclear magnetic resonance experiments are reported on a series of fully strained epitaxial La(2/3)Ca(1/3)MnO3 thin films on SrTiO3. We have found evidence of multiple phase segregation into ferromagnetic metallic and nonmetallic regions as well as regions that are nonferromagnetic and insulating. These insulating regions are mainly located close to interfaces and may have a significant impact on the performance of spin-tunnel devices. As a result of phase segregation, the ferromagnetic coupling within the metallic regions is depressed. This accounts for the reduction of the Curie temperature and conductivity in nanometric thin films.     

Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

Specific-heat anomaly caused by ferroelectric nanoregions in Pb(Mg(1/3)Nb(2/3))O3 and Pb(Mg(1/3)Ta(2/3))O3 relaxors

The specific heat of typical relaxors, Pb(Mg(1/3)Nb(2/3))O3 (PMN) and Pb(Mg(1/3)Ta(2/3))O3 (PMT), was measured by adiabatic and relaxation methods between 2 and 420 K. A broad anomaly was found in the specific heat curve over the wide temperature range between 150 and 500 K for PMN, and between 50 and 400 K for PMT, which provides evidence for the formation of ferroelectric nanoregions (FNR) in the paraelectric matrix. The entropy of the anomaly was estimated as 3.3 J K(-1) mol(-1) and 2.9 J K(-1) mol(-1) for PMN and PMT, respectively, which implies an order-disorder-type mechanism for the formation of FNR.     

(Pr,Nd)_(2/3)Sr_(1/3)MnO_3体系中的低温比热反常现象

主要研究了(Pr1-yNdy)2/3Sr1/3MnO3体系多晶样品在低温下的比热反常现象.Pr2/3Sr1/3MnO3在低温下没有比热反常现象,但随着Nd替代Pr,比热反常开始出现,峰值逐渐增加,峰值出现温度逐渐减小;在磁场的作用下,峰值减小,峰值出现温度逐渐增加;经分析,该低温比热反常现象与Schottky效应相关.     

Composition Dependence of Electrocaloric Effect in (1-x)Pb(Mg_(1/3)Nb_(2/3))O_3-xPbTiO_3 Single Crystals

Composition dependence of electrocaloric effect is investigated in(1- x)Pb(Mg1/3Nb2/3)O3- xP b Ti O3 single crystals by using an eighth-order Landau–Devonshire theory. The applied electric field along [001] direction reduces the ferroelectric-ferroelectric phase transition temperatures, but increases the Curie temperatures. The electrocaloric coefficients of tetragonal phase are much larger than that of rhombohedral and monoclinic phase. A negative electrocaloric effect is observed near the MC-T phase transition in 0.69Pb(Mg1/3Nb2/3)O3-0.31 Pb Ti O3 single crystal. The application of a strong enough electric field results in a high adiabatic temperature change over a broad range of temperature.Therefore, it would be useful to construct a solid state cooling cycle over a broad temperature range for practical applications.     

Effects of strontium on the characteristics of Pb(Zr1/2Ti1/2)O3--Pb(Zn1/3Nb2/3)O3 ceramics

The dielectric and piezoelectric properties of pyrochlore-free lead zirconate titanate-lead zinc niobate ceramics were investigated systematically as a function of Sr doping. The powders of Pb_{(1? x )}Sr _x [0.7(Zr_{1 / 2}Ti_{1 / 2})–0.3(Zn_{1 / 3}Nb_{2 / 3})]O₃, where x?=?0–0.06 were prepared using the columbite-(wolframite) precursor method. The ceramic materials were characterized using X-ray diffraction, dielectric spectra, hysteresis and electromechanical measurements. The phase-pure perovskite phase of Sr-doped PZN--PZT ceramics was obtained over a wide compositional range. The results showed that the optimized electrical properties were also achieved at composition x?=?0.0, which were K _P?=?0.69, d ₃₃?=?670?pC?N^?1, P _r?=?31.9?µC?cm^?2 and ε_rmax?=?18600. Maximum dielectric constant values of the systems decreased rapidly with increasing Sr concentration. Moreover, with increasing Sr concentration dielectric constant versus temperature curves become gradually broader. The diffuseness parameter increased significantly with Sr doping. Furthermore, Sr doping has been shown to produce a linear reduction in the transition temperature (T _m)?=?294.1–12.7x°C with concentration (x). Sr shifts the transition temperature of this system at a rate of 12.7°C?mol^?1%.     

First-principles study of the difference in permittivity between Ba(Mg1 / 3Ta2 / 3)O3 and Ba(Mg1 / 3Nb2 / 3)O3

This paper discusses the difference in permittivity at infrared frequencies between Ba(Mg_1/3Ta_2/3)O₃ (BMT) and Ba(Mg_1/3Nb_2/3)O₃ (BMN) based on a first-principles calculation. The permittivity, far-infrared and Raman spectra are successfully computed. Analysis of these results shows that the smaller amplitude of O in the low frequency mode E_u² (BMT), which is caused by the larger polarizability of Ta⁵⁺, is the origin of the smaller permittivity of BMT.     

Facile preparation and performance of novel high-TC xBi(Ni1/2Ti1/2)O3-(1-x)Pb(Zr1/2Ti1/2)O3 piezoceramics

High Curie temperature (T_C) xBi(Ni_1/2Ti_1/2)O₃-(1-x)Pb(Zr_1/2Ti_1/2)O₃ (xBNT-(1-x)PZT, BNT-PZT) piezoelectric ceramics were prepared by the conventional ceramic processing. The composition-induced morphotropic phase boundary (MPB) and its influences on structure and electrical performance were investigated. The synthesized BNT-PZT ceramics exhibit rather pure perovskite structure, and densified microstructure morphology with uniform elementals distribution in both grains and grain boundaries. With increasing the content of Bi(Ni_1/2Ti_1/2)O₃ (BNT), crystal structure of the BNT-PZT ceramics transform from tetragonal phase to rhombohedral phase, and dielectric response peaks change from narrow shape to very broad shape but all presenting dielectric frequency dispersion. The diffused and relaxation dielectric behavior can be fitted well by the quadratic law, and the Vogel-Fulcher law fitting provides additional information on the relaxation characteristic. The MPB effects are confirmed further by ferroelectric and piezoelectric properties measurements. High-T_C combined with excellent piezoelectric performance can be realized in the BNT-PZT system, which presents promising applications in geothermal exploration, aerospace and related elevated temperatures fields.