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| 磁场增强的La2/3 Sr1/3 MnO3有机半导体界面载流子注入 | |
| 引用本文： | 吴镝,熊祖洪,李晓光,Z.V. Vardeny,施靖.磁场增强的La2/3 Sr1/3 MnO3有机半导体界面载流子注入[J].物理,2006,35(6):456-460. |
| 作者姓名： | 吴镝 熊祖洪 李晓光 Z.V. Vardeny 施靖 |
| 作者单位： | 1. 美国犹他大学物理系,盐湖城,犹他,84112 2. 美国犹他大学物理系,盐湖城,犹他,84112;西南大学物理学院,磁电子与光电子实验室,重庆,400715 3. 中国科学技术大学材料科学与工程系,合肥微尺度物质科学国家实验室,合肥,230026 4. Department of Physics, University of California, Riverside, CA 92521 |
| 摘 要： | 文章作者制备了以多种π-共轭有机半导体（orgnanic semincondutor,简称OSEC）为中间层,La2/3Sr1/3MnO3（LSMO）和另一铁磁或非磁性金属为电极的有机二极管,测量了器件的磁致电阻和磁电致发光效应.器件显示了与LSMO电极类似的负磁电阻效应,但是它的电阻变化比LSMO电极本身的变化大3个数量级,而且器件还有正的磁电致发光效应.文章作者认为,这些磁场效应源于磁场作用下LSMO费米能级的异常移动,导致载流子在LSMO-OSEC界面注入的增强。 |
| 关 键 词： | 有机二极管 磁场效应 磁阻 |
| 收稿时间： | 2005-09-15 |
| 修稿时间： | 2005-09-15 |
Magnetic-field-dependent carrier injection at La2/3 Sr1/3 MnO3 and organic semiconductors interfaces |
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| WU Di,XIONG Zu-Hong,LI Xiao-Guang,Z.V. Vardeny,SHI Jing.Magnetic-field-dependent carrier injection at La2/3 Sr1/3 MnO3 and organic semiconductors interfaces[J].Physics,2006,35(6):456-460. | |
| Authors: | WU Di XIONG Zu-Hong LI Xiao-Guang ZV Vardeny SHI Jing |
| Institution: | 1 Department of Physics, University of Utah, Salt Lake City, Utah 84112, USA; 2 Spintronics and Optoeleetronics Lab, School of Physics, Southwest University, Chongqing 400715, China;3 Hefei National Laboratory for Physical Sciences at Microscale and Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China |
| Abstract: | We have fabricated organic diodes utilizing several p-conjugated organic semiconductors (OSEC) as spacer layers between La_ 2/3 Sr_ 1/3 MnO_3 (LSMO) and various metallic electrodes, and measured their magnetoresistance (MR) and magnetoelectroluminescence (MEL) responses. The devices exhibit large negative high-field MR responses that resemble the MR response of the LSMO electrode, but amplified by ~3 orders in the resistance, and accompanied by a positive high-field MEL effect. We believe these magnetic-field effects result from enhanced carrier injection at the LSMO-OSEC interface that is attributed to the anomalous field-dependent Fermi level shift in LSMO. |
| Keywords: | LSMO |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |