La0.67Ca0.33MnO3薄膜中的各向异性应变与电荷有序

本文采用脉冲激光沉积法在NdGaO3(001)单晶衬底上制备了一系列的La0.67Ca0.33MnO3薄膜,实验主要研究了薄膜的输运性质.La0.67Ca0.33sMnO3块材是铁磁金属基态,而La0.67Ca0.33MnO3/NdGaO3(001)薄膜由于各向异性应变的存在,可以观测到电荷有序绝缘相的出现.薄膜样品表...     

La0.33Pr0.34Ca0.33MnO3薄膜的应变效应

采用脉冲激光沉积法分别在(100)LaAlO₃和(100)SrTiO₃基片上生长了La_0.33Pr_0.34Ca_0.33MnO₃薄膜,并通过磁测量和电输运测量对生长在不同基片上的La_0.33Pr_0.34Ca_0.33MnO₃薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La_{关键词： 钙钛矿锰氧化物 相分离 电荷有序}     

The electric and magnetic properties of epitaxially grown A0.5-xLaxSr0.5MnO3 （A=Pr, Nd） thin film

The epitaxial （single crystal-like） Pr0.4La0.1Sr0.5MnO3 （PLSMO） and Nd0.35La0.15Sr0.5MnO3 （NLSMO） thin films are prepared and characterized, and the electric and magnetic properties are examined. We find that both PLSMO and NLSMO have their own optimum deposition temperature （To） in their growing into epitaxial thin films. When the deposition temperature is higher than To, a c-axis oriented but polycrystalline thin film grows; when the deposition temperature is lower than To, the thin film tends to be a-axis oriented and also polycrystalline. The most important point is that for the epitaxial PLSMO and NLSMO thin films the electronic phase transitions are closely consistent with the magnetic phase transitions, i.e. an antiferromagnetic phase corresponds to an insulating state, a ferromagnetic phase corresponds to a metallic state and a paramagnetic phase corresponds to a semiconducting state, while for the polycrystalline thin films the electronic phase transitions are always not consistent with the magnetic transitions.     

Field-induced insulator-metal-insulator transitions in low-energy H_2~+ ion-irradiated epitaxial La_(2/3)Ca_(1/3)MnO_3 thin films

Epitaxial La 2/3 Ca 1/3 MnO 3 thin films grown on LaAlO 3 (001) substrates were irradiated with low-energy 120-keV H 2 + ions over doses ranging from 10 12 ions/cm 2 to 10 17 ions/cm 2 . The irradiation suppresses the intrinsic insulator-metal (I-M) transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 × 10 15 ions/cm 2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

Magnetoresistance and electron paramagnetic resonance study of La0.67−yYyBa0.33MnO3/LaAlO3 thin films

Magnetoresistive La_0.67−yY_yBa_0.33MnO₃/LaAlO₃ thin films were prepared by the sol-gel spin-coating method. Our resistivity and the electron spin resonance (ESR) measurements indicate that the main factor determining the metal-insulator transition temperature T_m is the cation disorder represented by the cation radii variance σ², and that ferromagnetic insulating regions coexist in the ferromagnetic metallic phase. In the paramagnetic phase, the dissociation energy of spin clusters and the polaron hopping energy obtained from the ESR intensity and linewidth also displayed a prominent dependence on σ². Polaron localization due to Jahn-Teller distortions appears to be responsible simultaneously for the decrease in the ferromagnetic order and for the increase in the orbital order.     

Effect of illumination on magnetization and microwave absorption of La1−xCaxMnO3 (x<0.2) films

Light-induced changes of the hysteresis loops of magnetization and microwave absorption are investigated in low-doped La_1−xCa_xMnO₃ (x<0.2) thin films. The width of the hysteresis loops decreases clearly under illumination with visible or near-infrared light at temperatures below 50 K. The microwave conductivity has a minimum value at magnetic fields corresponding to the magnetization reversal and is shifted towards weaker fields under illumination. These effects show complex nonexponential time evolution and dependence on strength of the magnetic field. The results can be explained by assuming that small ferromagnetic metallic regions exist within the insulating ferromagnetic phase of the sample, and that these regions are expanded by optically induced charge transfer between Jahn–Teller split e_g states of neighboring Mn³⁺ ions. Decrease of the Mn³⁺ XPS core level spectrum is observed in the samples under illumination with a HeNe laser.     

Thermal Hysteresis in La2/3 Ca1/3 MnO3 Films Grown on Tilted SrTiO3 Substrates and Influence of External Magnetic Field

Thermal hysteresis in the resistivity of La2/3 Cu1/3MnO3 thin films grown on tilted SrTiO3 substrates is simulated by using the random network model on the basis of mixed-phase percolation between metallic and insulating domains, The metallic-insulating transition temperatures during the warming process are lower than those during the cooling process due to the difference in fraction of metallic domains between warming and cooling process. With an external magnetic field, the metallic-insulating transition temperatures shift to a higher value and the resistivities are reduced. The excellent agreement between the simulation and the experimental data further verifies that phase separation plays a crucial role in the transport process of La2/3Ca1/3MnO3 thin films.     

The suppression of structural phase transformation in LaVO3 and La1−xSrxVO3 thin films fabricated by pulsed laser deposition

Highly oriented (100) thin films of LaVO₃ and La_1−xSr_xVO₃ have been fabricated by pulsed laser deposition in a reducing atmosphere. The films show a transition from insulating to metallic behaviour in the composition region of x, 0.175<x<0.200. In the single crystals of the antiferromagnetic insulating phase, a first-order structural phase transition is observed few degrees below the magnetic transition, which manifests itself as a kink in the temperature dependence of resistivity. In the highly oriented thin films of LaVO₃ and La_1−xSr_xVO₃ fabricated on lattice matched substrates in this study, the structural phase transformation in the insulating phase has been suppressed. The electrical conduction is found to take place via hopping through localized states at low temperatures. The metallic compositions show a non-linear (T^1.5) behaviour in the temperature dependence of resistivity. V (2p) core level spectra of these films show a gradual change in the relative intensities of V³⁺ and V⁴⁺ ions as the value of x increases.     

Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches

Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies.An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications.We demonstrate the proton injection on SrCro3 thin films via an efficient low-energy hydrogen plasma implantation experiments,without destroying the original lattice framework.Hydrogen ions accumu-late largely at the interfacial regions with amorphous character which extend about one-third of the total thickness.The Hx.SrCro3(HSCO)thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure.Proton doping induces the change of Cr oxidation state from Cr^4+to Cr^3+in HSCO thin films and a transition from metallic to insulat-ing phase.Our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.     

Microscopic theory of non local pair correlations in metallic F/S/F trilayers

We consider a microscopic theory of F/S/F trilayers with metallic or insulating ferromagnets. The trilayer with metallic ferromagnets is controlled by the formation of non local pair correlations among the two ferromagnets which do not exist with insulating ferromagnets. The difference between the insulating and ferromagnetic models can be understood from lowest order diagrams. Metallic ferromagnets are controlled by non local pair correlations and the superconducting gap is larger if the ferromagnetic electrodes have a parallel spin orientation. Insulating ferromagnets are controlled by pair breaking and the superconducting gap is smaller if the ferromagnetic electrodes have a parallel spin orientation. The same behavior is found in the presence of disorder in the microscopic phase variables and also in the presence of a partial spin polarization of the ferromagnets. The different behaviors of the metallic and insulating trilayers may be probed in experiments. Received 4 July 2001 and Received in final form 8 November 2001     

Transport Behaviour of La0.8Sr0.2AlO3 Thin Film on Oxygen Deficient SrTiO3 Substrate

La_0.8Sr_0.2AlO₃ (LSAO) thin films are grown on SrTiO₃ (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that theLSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films.     

Spin-wave dispersion in orbitally ordered La1/2Sr3/2MnO4

The magnon dispersion in the charge, orbital, and spin ordered phase in La1/2Sr3/2MnO4 has been studied by means of inelastic neutron scattering. We find excellent agreement with a magnetic interaction model based on the CE-type superstructure. The magnetic excitations are dominated by ferromagnetic exchange parameters revealing a nearly one-dimensional character at high energies. The strong ferromagnetic interaction in the charge or orbital ordered phase appears to be essential for the capability of manganites to switch between metallic and insulating phases.     

Simulation of Temperature-Dependent Resistivity for Manganite La1/3Ca2/3MnO3

The resistivity of the heavy-doped La1/3Ca2/3MnO3 （LCMO） is simulated using a random resistor network model, based on a phase separation scenario. The simulated results agree well with the reported experimental data, showing a transition from a charge-disordered （CDO） state embedded with a few ferromagnetic （FM） metallic clusters to a charge-ordered （CO） state, corresponding to the transition from a high-temperature paramagnetic （PM） insulating state to a low-temperature antiferromagnetic （AF） insulating state. Furthermore, we find that the number of AF/CO clusters increases with decreasing temperature, and the clusters start to connect to each other around 250K, which causes percolating in the system. The results further verify that phase separation plays a crucial role in the electrical conductivity of LCMO.     

55Mn NMR investigation of electronic phase separation in La1-xCaxMnO3 for 0.2 < or = x < or = 0.5

55Mn NMR line shape measurements in La1-xCaxMnO3 for 0.20< or =x< or =0.50 provide experimental evidence about the existence of two distinct regions in the T-x magnetic phase diagram, where the homogeneous ferromagnetic (FM) metallic state is separated into FM metallic and FM insulating regions. These results are in agreement with recent theoretical predictions, which reveal a novel electronic phase separation in two FM states, providing orbital ordering and Jahn-Teller phonons are taken into consideration.     

Dynamic phase separation as revealed by the strong resistance relaxation in epitaxially shear-strained La0.67Ca0.33MnO3/NdGaO3(0 0 1) thin-films

Strong phase competitions between the ferromagnetic metal and the charge-ordered-insulator have been induced in a wide temperature range of 10-256 K for the shear-strained La_0.67Ca_0.33MnO₃/NdGaO₃(0 0 1) films. Based on various magnetotransport measurements, the mobility of phase boundaries was inferred to change dramatically with temperature. In the high temperature range where the phase boundaries are movable, strong relaxation in resistivity was observed, while at the frozen temperatures lower than 40 K it is weakened. The resistivities tend to relax in accordance with the phase transitions driven by the temperature or magnetic field in the phase separation (PS) background. Moreover, to our surprise, while the melting fields of the insulating phase varied with film thicknesses, for a given film however, they stay unchanged when started with different phase fractions produced by the field or thermal cycling. The results show a crucial role of the inherent strain state in determining PS and phase competitions in these epitaxial thin films.     

Possible quantum critical point in La(2/3)Ca(1/3)Mn(1-x)Ga x O3

We study the magnetic ground state in La(2/3)Ca(1/3)Mn(1-x)Ga x O3 manganites, where a quantum critical point (QCP) has been theoretically predicted. The metallic ferromagnetic ground state for low Ga doping breaks down for x > or = 0.11, an insulating state being established at low temperatures. Long-range ferromagnetism coexists with short-range magnetic correlations in the concentration range 0.11 < or = x < or = 0.145 while only the short-range correlations survive for x > or = 0.16. We discuss the implications of such a QCP to the physics of manganites and compare to other QCP systems.     

Asymmetric metal-insulator transition in disordered ferromagnetic films

We present experimental data and a theoretical interpretation of the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b ≈ 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin-wave excitations renders the dephasing length L(?) ? b in the range of sheet resistances considered, so that the effective dimension is d = 3. The conductivity data at different stages of disorder obey a fractional power-law temperature dependence and collapse onto two scaling curves for the metallic and insulating regimes, indicating an asymmetric metal-insulator transition with two distinctly different critical exponents; the best fit is obtained for a dynamical exponent z ≈ 2.5 and a correlation (localization) length critical exponent ν- ≈ 1.4 (ν+ ≈ 0.8) on the metallic (insulating) side.     

La0.67Ca0.33MnO3(001)薄膜表面结构的扫描隧道显微术研究

利用Scanning Tunneling Microscope(STM)和Scanning Tunneling Spectroscopy(STS)技术研究了La_0.67Ca_0.33MnO₃(001)表面性质,研究发现表面呈现多相分离现象,在锰氧终端面观察到了绝缘性的( 2 × 2 )R45°重构表面和金属性的(1×1)重构表面,在镧钙氧终端面,观察到了表面呈现条纹状结构.La_0.67Ca_{0.33 关键词： 镧钙锰氧薄膜 终端面 绝缘金属转变}     

Electrically controlled metal-insulator transition process in VO2 thin films

We report the evolution process of VO(2) thin films from the insulating phase to the metallic phase under current injection for the two-electrode-based thin-film devices. Based on electrical characterization and Raman microscopic detection, it was found that there exist two critical current densities, based on which the insulator-to-metal transition process can be divided into three stages. In stage I with low current injection, the VO(2) film in the insulating (semiconducting) phase acts as a resistor until the first critical current density, above which the insulator-metal transition is a percolation process with metallic rutile and insulating monoclinic phases coexisting (stage II); while beyond a second critical current density, a filamentary current path with pure metallic phase is formed with the remaining part outside of the current path receding back to the pure insulating phase (stage III). We confirm that a critical current density is required for the onset of electrically induced insulator-to-metal transition in VO(2) thin films.     

Electrical conduction through bond percolation in Nd0.67Sr0.33MnO3

We report our analysis of resistivity data on Nd_0.67Sr_0.33MnO₃ polycrystalline samples as a function of preparative conditions using a bond percolation model for a random mixture of metallic and insulating regions, assuming polaronic transport above and below the metal-insulator (M-I) transition temperature. Our analysis suggests that for oxygen deficient compounds the M-I transition that occurs at a lower temperature than the ferromagnetic transition arises from a percolation of the metallic regions. The temperature dependence of resistivity and thermopower suggests the existence of a bimodal distribution of conductivities.