高能Xe离子辐照引起的注碳a:SiO2中新结构的形成

先用120keV的碳离子注入非晶二氧化硅a:SiO2薄膜，再用能量为1754MeV的Xe离子辐照。注碳量为5．0×10^16—8．6×10^17ion／cm^2，Xe离子辐照剂量为1．0×10^11和5．0×10^11ion／cm^2。辐照后的样品中形成的新结构用显微傅立叶变换红外光谱仪进行测试分析。结果表明，Xe离子辐照引起了注碳a:SiO2中Si—C，C—C，Si—O—C键以及CO和CO2分子的形成与演化。在注碳量较高时，Xe离子辐照在样品中产生了大量的Si—C键。与注入未辐照和辐照的低注碳量样品比较，增强的Si—C键的形成，预示着辐照可引起注碳a:SiO2样品中的SiC结构相变。Amorphous silicon-dioxide （a:SiO2） films were firstly implanted at room temperature （RT） with 120 keV C-ions to doses ranging from 5.0 × 10^16 to 8.6 × 10^17 ion/cm^2, and then the C-doped a:SiO2 films were irradiated at RT with 1 754 MeV Xe ions to 1.0 × 10^11 and 5.0 × 10^11 ion/cm^2, respectively. The information of new tex- ture formation in the C-doped SiO2 films after high-energy Xe ion irradiation was investigated using micro-FTIR measurements. The obtained results showed that Si--C, C--C, Si--O--C bonds as well as CO and CO2 molecules were formed in the C-doped a-SiO2 films after Xe ion irradiation. Furthermore, Xe-ion irradiation induced a plenteous formation of Si--C bonds in the high dose C-ion implanted a:SiO2 films. Compared with the C-implanted sampies without Xe-ion irradiation and the low dose C-implanted samples with Xe-ion irraddiation, the enhanced and plenty of Si--C bond formation implied that the phase of SiC structures may be produced by Xe-ion irradiation in the high dose C-ion implanted a:SiO2 films.     

Optical and magnetic properties of InFeP layers prepared by Fe~+ implantation

InFeP layers are prepared by ion implantation of InP with 100-keV Fe＋ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3＋ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 0e （10e = 79.5775 A-m-1）, saturation magnetization of 4.35 × 10-5 emu, and remnant magnetization of 4.4× 10 6 emu.     

Raman spectrum study of graphite irradiated by swift heavy ions

Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences： 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 and 3500cm^-1 show that the disorder induced by Sn-ions increases with ion fluence increasing. However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though the latter has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ～ 3-cm^-1frequency shift toward lower wavenumber for the D band and ～ 6-cm^-1 shift toward lower wavenumber for the 2D band are observed at a fluence of 1×10^14 ions/cm^2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the graphene layers activated by radiation-induced strain around ion tracks. Moreover,the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks locally cause electronic decoupling of neighboring graphene layers.     

Synthesis of Bio-organic Molecules of Life Induced by Low Energy Ion Implantation

Gase discharge and ion implantation are respectively used in some simple water solution and solid molecular samples. The implanted samples are analysed by the ^1H nuclear magnetic resonance spectra and the Fourier transform infrared spectroscopy. The results show that some new NO3^- anion, NO2^- anion, dimethyl ether, and ethanol are formed in the water solution samples with nitrogen, methane and carbon dioxide gas discharge. New cyano groups (-CN) and amino groups (-NH2) are formed in the irradiated solid sodium carboxylic sample with N^ ion irradiation. The experimental results present a new way to synthesize small molecules of life by low-energy ion implantation.     

质子辐照不锈钢中氢气泡产生和演化研究

采用质子辐照模拟方法和正电子湮没寿命测量方法研究了质子辐照在国产改进型316L不锈钢中产生的氢气泡及其随辐照质子注量的演化过程。5×10^12,5×10^13,5×10^14／cm^2质子辐照的实验结果表明,辐照在不锈钢中产生氢气泡的尺度随辐照质子注量增加而增大,在质子注量为5×10^14／cm^2时氢气泡尺寸达到0．62nm,气泡的浓度随质子注量增加而减小。The bubble production and evolution in the home-made modified 316L stainless steel have been investigated by the proton irradiation simulation technique and the positron annihilation lifetime measurement. The experimental results of 5 × 10^12, 5 × 10^13 and 5 × 10^14/cm^2 proton irradiations show that the produced bubble size increases, while the bubble concentration decreases, with the increasing of the irradiation proton flueence. At the proton irradiation fluence of 5 × 10^14/cm^2 the bubble size reaches 0.62 nm.     

N离子注入对Ti—Al—Zr合金耐蚀性影响研究

经完全退火处理的Ti-Al-Zr合金表面注入不同剂量的N离子,并在pH值为10的溶液中进行电化学腐蚀试验。结果表明,N离子注入后,试样表面首先形成具有四方结构的ε-Ti2N,随着离子注入剂量的增加,四方结构的ε-Ti2N逐渐向立方结构的σ-TiN转变,X射线光电子能谱的分析结果也证实了这一变化过程;N离子的注入能明显改善Ti-Al-Zr合金表面的耐腐蚀性能,且在注入8×10^16 ion／cm^2时得到最佳的耐腐蚀性。根据原子碰撞理论对电化学腐蚀实验结果进行了理论分析。In the present investigation, fully annealed Ti-Al-Zr plates were implanted with different nitrogen fluences. The corrosion resistance was examined by the electrochemical methods in a solution with pH value of 10 at room temperature in order to determine the optimum fluenee that can give good corrosion resistance in a simulated nuclear reactor condition. The results show ε-Ti2N phase formed initially and then transformed into σ-TIN with increasing of nitrogen fluences, which was confirmed by the results of X-ray photoelectron spectroscopy （XPS）. In addition, it can be found the increase of the corrosion resistance depends on the nitrogen fluence employed and the maximum improvement of the corrosion resistance was observed with a fluence of 8 × 10^16 N^＋ ion/cm^2. The mechanism of the corrosion resistance is attributed to defect accumulation, formatio on of amorphous phase and nanocrystallization in the implanted layer.     

Hydrothermal Synthesis and Vacuum Ultraviolet-Excited Luminescence Properties of Novel Dy^3＋-doped GdPO4 White Light Phosphors

Novel Dy^3＋-doped GdPO4 white light phosphors with a monoclinic system are successfully synthesized by the hydrothermal method at 240℃. The strong absorption at around 147nm in the excitation spectrum is assigned to the host absorption. It is suggested that the vacuum ultraviolet excited energy is transferred from the host to the Dy^3＋ ions. The f - d transition of the Dy^3＋ ion is observed to be located at 182nm, which is consistent with the calculated value using Dorenbos＇s expression. Under 147nm excitation, Gd0.92PO4：0.08Dy^3＋ phosphor exhibits two emission bands located at 572 nm （yellow） and 478 nm （blue）, which correspond to the hypersensitive transitions ^4 F9/2-^6 H13/2 and ^4 F9/2-^6 H15/2. The two emission bands lead to the white light. Because of the strong absorption at about 147nm, Gd0.92PO4：0.08Dy^3＋ under vacuum ultraviolet excitation is an effective white light phosphor, and has promising applications to mercury-free lamps.     

Accelerated oxygen precipitation in fast neutron irradiated Czochralski silicon

Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon （CZ-Si） by infrared absorption spectrum and the optical microscopy. It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature （RT）, the 1107cm^-1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm^-1, 1096cm^-1, and 1182cm^-1, related to different shapes of the oxygen precipitates. The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.     

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation （ITOX） of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation （PBA）. The cavities are formed by 15 keV He implantation at a fluence of 2×10^16 cm^-2 and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.     

Terahertz transmission properties of Cr ion implantation glass

<正>Cr ion implantations in glass with the different doses of D=1.493×10~(17) and 4.976×10~(17) ion/cm~2 are obtained by metal vapor vacuum arc(MEVVA).The effects of the different Cr ion implanted doses on terahertz(THz) transmission property are analyzed from THz time-domain spectroscopy.The results show that the more the Cr ion implanted dose in the micro-area implantation glasses,the larger the THz transmission except the larger absorption at 0.24 THz.This is an effect attributed to the coupling of plasmas on both the implantation and the implantation affected zones of the Cr ion implantation glass.     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

退火对He注入及随后208Pb27+辐照的Al2O3单晶PL谱的影响

利用高能离子研究了110 keV 的He⁺注入Al₂O₃单晶及随后230 MeV的²⁰⁸Pb²⁷⁺辐照并在不同温度条件下退火样品的光致发光的特性. 从测试结果可以清楚地看到在375 nm，390 nm，413 nm 和450 nm 出现了强烈的发光峰. 经过600 K退火2 h后测试结果显示，390 nm发光峰增强剧烈，而别的发光峰显示不明显. 在900 K退火条件下，390 nm的发光峰开始减弱相反在510 nm出现了较强的发光峰，到1100 K退火完毕后390 nm的发光峰完全消失，而510 nm的发光峰相对增强. 从辐照样品的FTIR谱中看到，波数在460—510 cm^-1间的吸收是振动模式，经过离子辐照后，吸收带展宽，随着辐照量的增大，Al₂O₃振动吸收峰消失，说明Al₂O₃振动模式被完全破坏. 1000—1300 cm^-1之间为Al-O-Al桥氧的伸缩振动模式，辐照后吸收带向高波数方向移动. 退火后的FTIR谱变化不大.     

掺Er^3＋离子Sr3Y2（BO3）4晶体光谱性能的研究

研究了提拉法生长的掺Er^3＋的Sr3Y2（BO3）4晶体的吸收光谱和荧光光谱。应用J—O理论分析并计算了光谱参数,得到唯象参数Ω2、Ω4和Ω6分别为11．90×10^-20cm^2、3．44×10^-20cm^2和1．92×10^-20cm^2。在Er^3＋：Sr3Y2（BO3）4晶体中,Er^3＋在1533nm波长的发射截面为1．00×10^-20cm^2,^4I13／2→^I15／2能级跃迁的荧光寿命和辐射寿命分别为0．58ms和4．10ms,良好的光谱性能表明Er^3＋：Sr3Y2（BO3）4晶体可能成为潜在的1．55μm波段的一种激光材料。     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光     

丙醇-硫酸铵-1-（2-吡啶偶氮）-2-萘酚双水相萃取铅（Ⅱ）

研究了丙醇-硫酸铵双水相体系中Pb（Ⅱ）的萃取行为.实验表明：铅-碘化钾-PAN形成的离子缔合物容易被萃取到丙醇相中,在pH 4.4且无PAN时,双水相体系对[PbI4]2-络阴离子的萃取率为0;加入PAN后,该体系几乎能完全萃取体系中的离子缔合物.该稳定缔合物的最大吸收波长为486nm,表观摩尔吸光系数为1.47×105L·mol-1·cm-1,相关系数r为0.9989,铅（Ⅱ）的质量浓度在0-1.4μtg/10mL呈线性关系.     

新显色剂3,5-二（4-溴苯氨基重氮基）苯甲酸的合成及其与Ni（Ⅱ）的显色反应研究

合成了一种新型的双三氮烯类显色剂3,5-二（4-溴苯氨基重氮基）苯甲酸,并对该试剂与Ni（Ⅱ）的显色反应进行了研究。实验表明,在Triton X-100存在下,pH 10.0的硼砂-氢氧化钠缓冲溶液中,该试剂与Ni（Ⅱ）形成了2：1的红色络合物,其最大吸收波长位于510nm处,表观摩尔吸光系数ε为1.96×10^5L·mol^-1·cm^-1,Ni（Ⅱ）的质量浓度在0一10μg范围内遵守比耳定律。该试剂用于分光光度测定铝合金标样中镍,测定值与认定值相符。     

2-（3,5-二氯-2-吡啶偶氮）-5-二乙氨基酚分光光度法测定啤酒中微量铬的研究

在0.09—0.16mol·L-1硫酸介质中,Cr2O72-与2-（3,5-二氯-2-吡啶偶氮）-5-二乙氨基酚作用,形成二离子缔合物,最大吸收波长533nm,表观摩尔吸光系数为为4.51×104L·mol-1·cm-1,铬含量在0—3.3μg·mL-1内符合比耳定律,用于啤酒样品中微量铬的测定,结果满意。