共查询到19条相似文献,搜索用时 375 毫秒
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本文深入研究了130 nm Silicon-on-Insulator (SOI) 技术下的窄沟道n型metal-oxide-semiconductor-field-effect-transistor (MOSFET) 器件的总剂量辐照效应. 在总剂量辐照下, 相比于宽沟道器件, 窄沟道器件的阈值电压漂移更为明显. 论文利用电荷守恒定律很好地解释了辐照增强的窄沟道效应. 另外, 本文首次发现, 对于工作在线性区的窄沟道器件, 辐照产生的浅沟槽隔离氧化物(STI) 陷阱正电荷会增加沟道区载流子之间的碰撞概率和沟道表面粗糙度散射, 从而导致主沟道晶体管的载流子迁移率退化以及跨导降低. 最后, 对辐照增强的窄沟效应以及迁移率退化进行了三维器件仿真模拟, 仿真结果与实验结果符合得很好.
关键词:
总剂量效应(TID)
浅沟槽隔离(STI)
氧化层陷阱正电荷
SOI MOSFET 相似文献
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重点开展了稳态、瞬态X射线辐照引起的金属氧化物半导体(CMOS)器件剂量增强效应relative dose enhancement effect(RDEF)研究.通过实验给出辐照敏感参数随总剂量的变化关系,旨在建立CMOS器件相同累积剂量时Χ射线辐照和γ射线辐照的总剂量效应损伤等效关系.在脉冲X射线源dense plasma focus(DPF)装置上,采用双层膜结构开展瞬态翻转增强效应研究,获得了瞬态翻转剂量增强因子.这些方法为器件抗X射线辐照加固技术研究提供了实验技术手段.
关键词:
X射线
剂量增强因子
总剂量效应
剂量率效应 相似文献
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本文通过实验研究了0.8μm PD(Partially Depleted)SOI(Silicon-On-Insulator)p型Metal-oxidesemiconductor-feld-efect-Transistor(MOSFET)经过剂量率为50 rad(Si)/s的60Coγ射线辐照后的总剂量效应,分析了沟道长度对器件辐照效应的影响.研究结果表明:辐照总剂量相同时,短沟道器件的阈值电压负向漂移量比长沟道器件大,最大跨导退化的更加明显.通过亚阈值分离技术分析得到,氧化物陷阱电荷是引起阈值电压漂移的主要因素.与长沟道器件相比,短沟道器件辐照感生的界面陷阱电荷更多. 相似文献
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通过分析部分耗尽绝缘层附着硅互补金属氧化物半导体静态随机存储器(SRAM)在动态偏置条件下的电学参数和功能参数随累积剂量的变化规律, 研究了绝缘层附着硅(SOI)工艺SRAM器件在60Co-γ射线辐照后的总剂量辐射损伤效应及器件敏感参数与功能错误数之间的相关性,为进一步深入研究大规模SOI集成电路的抗总剂量辐射加固及其辐射损伤评估提供了可能的途径和方法.实验结果表明:辐射引起的场氧和埋氧漏电是功耗电流增大的主要原因; 阈值电压漂移造成输出高电平下降、低电平微小上升和峰-峰值大幅降低,以及传输延迟增大; 当总剂量累积到一定程度,逻辑功能因关断功能的失效而出现突变错误; 传输延迟和输出高电平与逻辑功能错误之间存在一定相关性. 相似文献
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本文分析了浅槽隔离(STI)结构辐射诱导电荷的分布情况,给出一种模拟超深亚微米器件总剂量辐射效应的新方法.研究结果表明,如果在栅附近沿着STI侧墙不加辐照缺陷,仿真出的0.18 μm超深亚微米晶体管亚阈区I-V特性没有反常的隆起,并且能够很好地反映试验结果.在研究总剂量辐照特性改善方面,在剂量不是很大的情况下,采用超陡倒掺杂相对于均匀掺杂能有效地减小辐照所引起的泄漏电流.如果采用峰值(Halo)掺杂,不仅有利于提高超深亚微米器件的抗辐照能力,而且在大剂量的情况下,可以得到明显的效果.
关键词:
总剂量
超陡倒掺杂
Halo掺杂
辐射效应 相似文献
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空间科学的进步对航天用电子器件提出了更高的性能需求, 绝缘体上硅(SOI)技术由此进入空间科学领域, 这使得器件的应用面临深空辐射环境与地面常规可靠性的双重挑战. 进行SOI N型金属氧化物半导体场效应晶体管电离辐射损伤对热载流子可靠性的影响研究, 有助于对SOI器件空间应用的综合可靠性进行评估. 通过预辐照和未辐照、不同沟道宽长比的器件热载流子试验结果对比, 发现总剂量损伤导致热载流子损伤增强效应, 机理分析表明该效应是STI辐射感生电场增强沟道电子空穴碰撞电离率所引起. 与未辐照器件相比, 预辐照器件在热载流子试验中的衬底电流明显增大, 器件的转移特性曲线、输出特性曲线、跨导特性曲线以及关键电学参数VT, GMmax, IDSAT退化较多. 本文还对宽沟道器件测试中衬底电流减小以及不连续这一特殊现象进行了讨论. 相似文献
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对65 nm互补金属氧化物半导体工艺下不同尺寸的N型和P型金属氧化物半导体场效应晶体管(NMOSFET和PMOSFET)开展了不同偏置条件下电离总剂量辐照实验.结果表明:PMOSFET的电离辐射响应与器件结构和偏置条件均有很强的依赖性,而NMOSFET表现出较强的抗总剂量性能;在累积相同总剂量时,PMOSFET的辐照损伤远大于NMOSFET.结合理论分析和数值模拟给出了PMOSFET的辐射敏感位置及辐射损伤的物理机制. 相似文献
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BI Da-Wei ZHANG Zheng-Xuan ZHANG Shuai CHEN Ming YU Wen-Jie WANG Ru TIAN Hao LIU Zhang-Li 《中国物理C(英文版)》2009,33(10)
The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presented.At 1 Mrad(Si) radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure.The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown.The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment. 相似文献
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Data retention after program/erase (P/E) cycles is one of the most important reliability issues in a flash EEPROM. Electron detrapping is the main cause of data leakage in the state-of-the-art flash EEPROM. The log(t) dependence of ΔVth is a unique aspect of the electron detrapping. To explain log(t) dependence, we have assumed that after electron detrapping, the positive-ionized trap reduces the probability of electrons in the influence area being emitted from their site. Based on this assumption, we have proposed a model of detrapping which is consistent with the experimental results. 相似文献
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Zengtao Liu Myongseob Kim Venkat Narayanan Edwin C. Kan 《Superlattices and Microstructures》2000,28(5-6)
Metal nanocrystals self-assembled on gate tunneling oxide can be used to replace the conventional Si/Ge nanocrystals as the floating gate in EEPROM cells. We have demonstrated the successful use of Au and W with their respective process dependence and self-assembly characteristics. The new material options can potentially enhance the applicability and functionality of the nanocrystal EEPROM device. Implications on process integration, in particular the control oxide growth and overall thermal budget, are examined by microscopy, gate current injection and channel mobility monitoring. Charging by hot-carrier injection and control gate tunneling have both been observed by shifts in I–V characteristics. The electrostatic behavior of metal nanocrystals is similar to that of Si nanocrystals in terms of the asymmetrical threshold voltage on source–drain reversal after hot-carrier injection and the Coulomb blockade effects. The electrodynamic behavior is expected to be quite different due to the density of states, but further study is required for quantitative analysis. 相似文献
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Boris Lončar 《辐射效应与固体损伤》2013,168(12):903-912
The aim of this paper is to examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components subjected to the influence of gamma radiation. This problem is of considerable significance for both military industry and space technology. We present total dose results for the NM27C512 8F85 EPROM and M24128 – B W BN 5 T P EEPROM components. There is evidence that EPROM components radioactive reliability is better than that of EEPROM components. Furthermore, the changes EPROM's undergoes are reversible, so that after erasing process and reprogramming all EPROM components are fully functional. On the other hand, EEPROM's changes are irreversible and when subjected to the influence of gamma radiation, all EEPROM components become permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers. 相似文献
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Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide 下载免费PDF全文
Nitrogen ions of various doses are implanted into the buried oxide(BOX) of commercial silicon-on-insulator(SOI) materials,and subsequent annealings are carried out at various temperatures.The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage(C-V) technique after irradiation using a Co-60 source.It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses.The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer.Based on the measured C-V data,secondary ion mass spectrometry(SIMS),and Fourier transform infrared(FTIR) spectroscopy,the total dose responses of the nitrogen-implanted SOI wafers are discussed. 相似文献
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本文建立了90 nm工艺下的绝缘体上硅浮体器件和选择性埋氧层上硅器件模型,通过器件电路混合仿真探究了工作温度对上述两种结构的多级反相器链单粒子瞬态脉冲宽度以及器件内部电荷收集过程的影响.研究表明, N型选择性埋氧层上硅器件相较于浮体器件具有更好的抗单粒子能力,但P型选择性埋氧层上硅器件的抗单粒子能力在高线性能量转移值下与浮体器件基本相同.同时电荷收集的温度相关性分析表明,N型选择性埋氧层上硅器件只存在漂移扩散过程,当温度升高时其电荷收集量变化很小,而N型浮体器件存在双极放大过程,电荷收集量随着温度的升高而显著增加;另外, P型选择性埋氧层上硅器件和浮体器件均存在双极放大过程,当温度升高时P型选择性埋氧层上硅器件衬底中的双极放大过程越来越严重,由于局部埋氧层的存在,反而抑制了其源极的双极放大过程,导致它的电荷收集量要明显少于P型浮体器件.因此选择性埋氧层上硅器件比浮体器件更好地抑制了温度对单粒子瞬态脉冲的影响. 相似文献
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Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS)transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX)substrate and tested using 10 keV X-ray radiation sources.The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×106 rad(Si).The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures. 相似文献
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For circular quantum dot (QD), taking into account the Razhba spin-orbit interaction (SOI), an exact energy spectrum is obtained. For a small SOI constant, the eigenfunctions of the QD are found. It is shown that the application of a radiation field with circular polarization removes the Kramers degeneracy of the QD eigenstates. Effective spin polarization of electrons transmitted through the QD owing to a radiation field with circular polarization is demonstrated. 相似文献
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Jinghao Zhao Hang Zhou Jiangwei Cui Qiwen Zheng Ying Wei Shanxue Xi 《辐射效应与固体损伤》2013,168(7-8):606-616
ABSTRACTThe authors perform gamma ray irradiation and hot carrier stress on RH H-Gate PD (partially depleted) SOI NMOSFETs as the experimental group and commercial strip-shaped gate PD SOI NMOSFETs as the control group. They analyse HCI degradation in samples and conclude that radiation could enhance HCI degradation in RH H-gate samples. Moreover, the mechanism is explained as the coupling effect between the front gate and back gate caused by TID radiation-induced trap charges in the buried oxide. 相似文献