总剂量辐照下沟道长度对部分耗尽绝缘体上硅p型场效应晶体管电特性的影响

本文通过实验研究了0.8μm PD(Partially Depleted)SOI(Silicon-On-Insulator)p型Metal-oxidesemiconductor-feld-efect-Transistor(MOSFET)经过剂量率为50 rad(Si)/s的60Coγ射线辐照后的总剂量效应,分析了沟道长度对器件辐照效应的影响.研究结果表明:辐照总剂量相同时,短沟道器件的阈值电压负向漂移量比长沟道器件大,最大跨导退化的更加明显.通过亚阈值分离技术分析得到,氧化物陷阱电荷是引起阈值电压漂移的主要因素.与长沟道器件相比,短沟道器件辐照感生的界面陷阱电荷更多.

Influence of channel length on PD SOI PMOS devices under total dose irradiation

This paper mainly investigates the total dose irradiation effects on 0.8 μm PD SOI PMOS devices which are exposed to ⁶⁰Co γ-rays at a dose rate of 50 rad(Si)/s. The channel length dependence of SOI PMOS devices at total dose irradiation is investigated. The result shows that the threshold voltage shift is only a little larger for shorter channel devices at the same total dose. However, the degradation of maximum transconductance for shorter channel devices is more significant. We found that the oxide-trapped charge is the main factor impacting the threshold drift. We may conclude that a short channel device can produce more interface trapped charges by using the subthreshold separation technology.