He离子注入的尖晶石中Au纳米颗粒的合成研究

利用20 keV的He离子注入表面蒸镀了Au薄膜的尖晶石（MgAl2O4）样品, 随后对注入样品进行了退火处理。 在紫外可见光谱上观察到了由于金属纳米颗粒的存在而引起的较强的表面等离子体共振吸收峰, 提供了材料中金属纳米颗粒形成的光谱证据。 并对形成的Au纳米颗粒的尺寸随退火温度以及He注入剂量的变化进行了研究。 Spinel deposited with a thin Au film was implanted with helium ions, and annealed in vacuum condition subsequently. The surface Plasmon resonance absorbance peak due to the existence of metallic nanoparticles in the dielectric matrix was observed on the Ultraviolet Visible Spectrometry, indicating the formation of metallic nanoparticles in spinel. The dependence of Au particles size with annealing temperature and implantation doses was also investigated.     

注氦尖晶石的红外光谱研究

利用傅立叶变换红外光谱仪对注He尖晶石样品随退火温变化而引起光吸收性能的变化进行了研究。发现尖晶石样品在626.4cm^-1附近的吸收峰随注入剂量的增加向小波数方向移动,而在随后退火过程该吸收峰随退火温度的增加而向大波数方向回复。该吸收峰的回复行为依赖于注入剂量和退火温度。认为在626.4cm^-1附近吸收峰随注入剂量和退火温度的这种变化与尖晶石中He的俘获以及释放有关。     

Effects of Helium and Oxygen Common Implantation in Silicon Wafer

Defect engineering for SiO2 precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen （SIMOX）. Cavities axe created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120 keV 8.0 ×1016 cm 2 0 ions. The Q ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectionM transmission electron microscopy （XTEM）, Fourier transform infrared absorbance spectrometry （FTIR） and atomic force microscopy （AFM） measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.     

低能Co离子注入单晶ZnO的光致发光特性

采用离子注入法研究了Co离子注入ZnO晶体的光致发光效应。 对离子注入后的样品在Ar气保护下进行退火处理, 退火温度为700 ℃, 退火时间为10 min, 在其光致发光谱中观察到了406和370 nm的紫光发射峰。 对比了Co, Cu离子分别注入的ZnO晶体的光致发光谱, 观测到二者的光致发光谱类似。 同时, 研究了Co离子注入剂量对样品发光性质的影响, 结果表明随注入剂量的增加绿色发光中心逐渐向低能边偏移, 分析认为绿色发光中心的偏移与离子注入后ZnO晶体的禁带宽度发生改变相关。 In this paper, ion implantation techniques were used to study the photoluminescence(PL) of the Co implanted crystal ZnO. After Co ion implanted, the samples were annealed at 700 ℃ for 10 min in Ar gas flow. It was observed violet emission peak of 406 and 370 nm in the PL spectrum. The PL spectra of the ZnO crystal samples which were implanted by Co ions and Cu ions, respectively, have been compared and observed that the PL spectrum of the Co implanted ZnO is similar to that of the Cu implanted ZnO. We studied the influence of implantation dose on the PL of the Co implanted ZnO and found that the green luminescence centre shifted with increasing of implantation dose. It is concluded that the shift of the green luminescence centre is related to the change of ZnO band gap which was caused by ion implantation.     

Kr离子注入SiC的拉曼光谱研究

应用拉曼光谱研究了5 MeV Kr离子（注量分别为5×1013,2×1014,1×1015 ions/cm2）室温注入6H SiC单晶及其高温退火处理后结构的变化。 研究表明, 注入样品的拉曼光谱中不仅出现了Si—C振动的散射峰, 还产生了同核Si—Si键和C—C键散射峰。 Si—C散射峰强度随退火温度升高而增强, 当退火温度高达1000 ℃时, 已接近未辐照SiC的散射峰强度。晶体Si—Si键散射峰强度随退火温度变化不大, 而非晶Si—Si键散射峰强度随退火温度的增加逐渐消失。相对拉曼强度（Relative Raman Intensity, 简称RRI）随注量的增加逐渐减小并趋于饱和, 且不同退火温度样品的饱和注量不相同; RRI随退火温度的增加逐渐升高, 这在低注量样品中表现得尤为明显。 低、中、高3种注量样品的RRI随退火温度的增加从重合逐渐分离, 并且退火温度越高, 分离越大。 Raman spectroscopy was used to study the structure changes of 6H SiC single crystal implanted with 5 MeV Kr (Krypton) at room temperature and subsequently annealed at high temperature. The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks, but also homonuclear Si—Si and C—C bond vibration peaks. Si—C bond vibration peaks gradually strengthen with increasing temperature. When annealing at 1000 ℃, the peak intensity of Raman spectrum is close to that of virgin specimen. It is found that crystal Si—Si bond vibration peaks do not change when annealing, but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature. The Relative Raman Intensity (RRI) values decrease with increasing fluence and tend to saturate, but the saturation fluences is different for various anneal temperature. The RRI values increases with raising annealing temperature, which is more obvious in low implanted specimens. At the same time, the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.     

Thermal desorption characteristic of helium ion irradiated nickel-base alloy

The nickel-base alloy is one of the leading candidate materials for generation IV nuclear reactor pressure vessel.To evaluate its stability of helium damage and retention,helium ions with different energy of 80 keV and 180 keV were introduced by ion implantation to a certain dose(peak displacement damage 1-10 dpa).Then thermal desorption spectroscopy(TDS)of helium atoms was performed to discuss the helium desorption characteristic and trapping sites.The desorption peaks shift to a lower temperature with increasing dpa for both 80 keV and 180 keV irradiation,reflecting the reduced diffusion activation energy and faster diffusion within the alloy.The main release peak temperature of 180 keV helium injection is relatively higher than that of 80 keV at the same influence,which is because the irradiation damage of 180 keV,helium formation and entrapment occur deeper.The broadening of the spectra corresponds to different helium trapping sites(He-vacancies,grain boundary)and desorption mechanisms(different Hen Vm size).The helium retention amount of 80 keV is lower than that of 180 keV,and a saturation limit associated with the irradiation of 80 keV has been reached.The relatively low helium retention proves the better resistance to helium bubbles formation and helium brittleness.     

Helium-Implantation-Induced Damage in NHS Steel Investigated by Slow-Positron Annihilation Spectroscopy

Evolutions of defects and helium contained defects produced by atomic displacement and helium deposition with helium implantation at different temperatures in novel high silicon （NHS） steel are investigated by a slow positron beam. Differences of the defect information among samples implanted by helium to a fluence of 1×1017 ions/cm2 at room temperature, 300°C, 450°C and 750°C are discussed. It is found that the mobility of vacancies and vacancy clusters, a recombination of vacancy-type defects and the formation of the He-V complex lead to the occurrence of these differences. At high temperature irradiations, a change of the diffusion mechanism of He atoms/He bubbles might be one of the reasons for the change of the S-parameter.     

Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

This paper reports that ion implantation to a dose of 1×10¹⁷ ions/cm² was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600-900℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600-900℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600- 750℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at \sim 850℃ and \sim 750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900℃.     

直流磁控溅射沉积含He钛膜的研究

研究了用He/Ar混合溅射气体的直流磁控溅射制备钛膜中，He的掺入现象.分析结果表明，大量的He原子（He/Ti原子比高达56%）被均匀地引入到Ti膜中，其He含量可由混合溅射气体的He分量精确控制.通过调节溅射参数，可实现样品中He的低损伤引入.研究还发现，溅射沉积的含氦Ti膜具有较高的He成泡剂量和高的固He能力，这可能是溅射沉积形成了纳米晶Ti膜所致.纳米晶Ti膜较粗晶材料具有很高浓度的He捕陷中心，使He泡密度增大而泡尺寸减小.随He引入量的增加，Ti膜的晶粒尺寸减小，He引起的晶体点阵参数和X射线衍射峰宽度增大，晶体的无序程度增加.Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%)incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage(or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retain He in sputtering Ti films is much higher than that in the coarse grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With the increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase.     

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Ge+ ions are implanted into fused silica glass at room temperature and a fluence of 1×10 17 cm-2 . The as-implanted samples are annealed in O2, N2 and Ar atmospheres separately. Ge0 , GeO and GeO2 coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600℃ leads each composite to change its content. After annealing at 1000℃, there remains some amount of Ge 0 in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N2 , Si–N composite is formed. The absorption peak of GeO appears at 240 nm after annealing in O2 atmosphere, and a new absorption peak occurs at 418 nm after annealing in N2 atmosphere, which is attributed to the Si–N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO 2 nanoparticles in the annealed sample. In the present study, the GeO content and the GeO2 content depend on annealing temperature and atmosphere. Three photoluminescence emission band peaks at 290, 385 and 415 nm appear after ion implantation and they become strong with the increase of annealing temperature below 700℃, and their photoluminescences recover to the values of as-grown samples after annealing at 700℃. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.     

不同品种大豆耐铝性的FTIR分析研究

利用傅里叶变换红外光谱(FTIR)法测定了2个不同耐铝性大豆品种在不同浓度铝处理下根、茎、叶的红外光谱。通过对各谱图的比较分析发现,除928～1 200 cm-1区域的FTIR差异比较明显外,未经处理的2个品种大豆红外光谱基本相似。而铝处理后2个品种大豆根、茎、叶的红外吸收峰形及峰值均与对照有较大的区别,且随铝浓度升高其FTIR区别越为明显。此外,结果表明浙春3号(铝敏感品种)的变化幅度比浙春2号(铝耐性品种)更为明显,这说明铝敏感大豆在铝胁迫下物质代谢受到了较大的影响。因此,采用FTIR法鉴别大豆不同耐铝性能够提供较为准确的结果,具有广泛的应用前景。     

二维红外相关光谱研究温度对卵转铁蛋白构象的影响

采用傅里叶变换红外光谱(FTIR)和二维相关光谱分析技术研究了无铁卵转铁蛋白和饱和铁卵转铁蛋白在加热条件下(25～95 ℃)构象变化规律。结果表明,随着温度升高,无铁卵转铁蛋白在3 300 cm-1处的峰的迁移程度比饱和铁卵转铁蛋白大,说明卵转铁蛋白结合铁后氢键作用增强,对热的抵抗性增强。二维红外图谱分析显示,无铁卵转铁蛋白与饱和铁卵转铁蛋白的二级结构变化顺序为β-折叠>酰胺Ⅱ>-CH₂-弯曲振动。通过对比无铁卵转铁蛋白和饱和铁卵转铁蛋白的二维同步和异步图谱发现,在1 652和1 688 cm-1处的交叉峰存在差异,卵转铁蛋白结合铁后温度对其二级结构中α-螺旋影响变小,而对β-转角的影响变大。     

Ti-2Al-2.5Zr合金He离子辐照效应研究

 在Ti-2Al-2.5Zr合金中注入能量为75 keV的He离子，注入剂量分别为5×10¹⁶cm^-2，1×10¹⁷ cm^-2。通过显微硬度测量和剖面电子显微观察，研究了He离子对Ti-2Al-2.5Zr合金力学性能和显微组织的影响。结果表明:样品的显微硬度随He离子注量的增加而升高，在温度为350和550 ℃的Ar气中退火后硬度有所下降。剖面电子显微观察发现有位错环和He气泡生成，退火后He气泡有长大、缺陷有回复的趋势。辐照产生的位错环是辐照后硬度升高的直接原因，其退火发生回复又引起硬度随退火温度的升高而降低。     

蒙药草乌炮制前后二维红外相关光谱的分析研究

采用二维相关红外技术,并借助于变温过程所跟踪的动态光谱对蒙药生草乌进行了分析研究.蒙药生草乌和制草乌的一维谱图较相似,导数光谱进一步分析,1 745,1 468,1 337 cm-1处吸收峰在经过酸奶炮制之后向底波数位移,1 657 cm-1处吸收峰在经过炮制之后向高波数位移,而二维红外相关谱则差别较大,在1 300～800 cm-1波数范围内,生品的二维红外光谱存在3个主要的自动峰(1 650,1 560,1 470cm-1),其中以1 560 cm-1峰最强.自动峰和交叉峰形成明显的3×3的对称分布,均为正相关;制草乌在这一范围内的自动峰主要在4个区域,1 220与1 200 cm-1两个吸收峰组成的一个区域,1 140和1 070 cm-1两个尖锐的峰区,以及1 000～900 cm-1区域内宽大重叠的峰,各自动峰均为正相关.凭借二维红外相关谱上的自动峰和交叉峰町以较直观地鉴别牛草乌和制草乌,而且还可以揭示两者相应各官能团的变化规律.该法快速、准确,可为鉴别药材加上后结构的变化规律提供一种新的方法和手段.     

铝镁尖晶石中He离子注入引起损伤的退火行为研究

利用卢瑟福沟道背散射技术结合表面的原子力显微分析,对注He的铝镁尖晶石晶体的晶格损伤及表面形变随退火温度变化的关系进行了研究.结果表明,不同注入剂量的样品中晶格损伤和表面形变表现出显著不同的退火行为.分析认为造成损伤演化的这种差异与注入的He原子在晶体中不同的聚集状态有关. 关键词： 离子注入 He 尖晶石 卢瑟福沟道背散射     

中药重楼及其伪品开口箭的FTIR分析与鉴别

本文采用傅里叶变换红外光谱方法(FTIR)对中药材重楼及其伪品开口箭的红外光谱进行了测试及对比分析。研究表明,重楼和开口箭各自有其独特的红外光谱特征,二者各自所包含的红外吸收峰的峰位明显不同,二者的红外光谱的峰形整体上有非常明显的区别,特别是在1650cm-1处及1405～1258cm-1范围这两个地方二者的峰形有非常明显的区别。采用傅里叶变换红外光谱方法可对重楼及其伪品开口箭加以鉴别和区分。     

新型环保绝缘气体反式-1,1,1,4,4,4-六氟-2-丁烯的红外吸收特性及检测技术研究

六氟化硫气体在电力领域的广泛应用带来日益严峻的环保压力,寻求可替代的新型环保绝缘气体已成为化学及电气学科领域研究的热点。反式-1,1,1,4,4,4-六氟-2-丁烯[HFO-1336mzz(E)]气体因其优良的环保特性及高介电强度受到国内外的广泛关注。开展光谱吸收特性及检测技术的研究对深化电气性能的研究意义重大。采用自组装压强、温度可调控多次反射长光程池,组合傅里叶变换红外分光光度计（FTIR）及真空泵等搭建实验测试系统,通过FTIR实验及仿真模拟首先研究了HFO-1336mzz(E)气体在常温常压、1 100~1 350 cm-1波段的红外吸收特性;并对测试背景中可能存在的CO₂和H₂O进行谱线交叉干扰分析;重点研究了压强、温度对HFO-1336mzz(E)气体在1 100~1 350 cm-1波段红外光谱吸收特性的影响;同时基于非分散红外（NDIR）技术对HFO-1336mzz(E)气体低浓度泄漏及高浓度混合比传感器进行了仿真测试。结果表明：HFO-1336mzz(E)的三个强吸收峰的中心波数分别为1 152,1 267及1 333 cm-1,模拟仿真红外光谱与气体实测结果吻合较好;1 333 cm-1处干燥空气背景中CO₂吸收强度数量级低至10-6,在150 nm滤波带宽内水分子峰面积积分影响因子约为1.44×10-3,谱线交叉干扰均可忽略不计,而痕量泄漏检测时需要湿度补偿;选择HFO-1336mzz(E)气体在1 333及1 267 cm-1位置分别作为NDIR技术实现低浓度泄漏及高浓度混合比检测的吸收谱线切实可行;光谱吸收系数及谱线展宽随着压强升高而增大,1 333及1 267 cm-1位置吸收系数随压强的变化率分别为0.273和0.118 cm-1·kPa-1;随温度的升高峰值吸收系数减小,谱线展宽变窄,但不同位置吸收系数变化差异较大,1 333及1 267 cm-1位置吸收系数随温度的变化率分别为-0.105 6和-0.035 cm-1·K-1。传感器仿真测试结果显示1 333 cm-1处5 cm光程可实现0~1 800 μL·L-1低浓度痕量泄漏测试,1 267 cm-1位置2 mm光程可实现0~10%高浓度混合比测试。该研究为基于红外光谱吸收原理的光学气体传感器的研制提供实验与理论依据。     

滇丹参与丹参的傅里叶变换红外光谱对比研究

本文采用傅里叶变换红外光谱方法(FTIR)对中药材滇丹参和丹参及中成药复方丹参片进行了对比研究,比较了它们的红外光谱的异同.研究表明,滇丹参和丹参的红外光谱的部分吸收峰各峰之间构成相互对应关系,表明滇丹参与丹参所含的主要化学成分相似;滇丹参与丹参的红外光谱在1263、1062、668～541 cm-1三处峰形存在明显的...