Spin-independent transparency of pure spin current at normal/ferromagnetic metal interface

The spin transparency at the normal/ferromagnetic metal(NM/FM) interface was studied in Pt/YIG/Cu/FM multilayers. The spin current generated by the spin Hall effect(SHE) in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect(ISHE) in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents(σ(sc)), the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electrochemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe_(20)Ni_(80) (Py) than that of Ni is obtained from the nonlocal voltage measurements.     

Spin texturing in a parabolically confined quantum wire with Rashba and Dresselhaus spin–orbit interactions

In this study, we investigate theoretically the effect of spin–orbit coupling on the energy level spectrum and spin texturing of a quantum wire with a parabolic confining potential subjected to the perpendicular magnetic field. Highly accurate numerical calculations have been carried out using a finite element method. Our results reveal that the interplay between the spin–orbit interaction and the effective magnetic field significantly modifies the band structure, producing additional subband extrema and energy gaps. Competing effects between external field and spin–orbit interactions introduce complex features in spin texturing owing to the couplings in energy subbands. We obtain that spatial modulation of the spin density along the wire width can be considerably modified by the spin–orbit coupling strength, magnetic field and charge carrier concentration.     

Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells

The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.     

Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector

The space charge accumulation in CdZnTe crystals seriously affects the performance of high-flux pulse detectors.The influence of sub-bandgap illumination on the space charge distribution and device performance in CdZnTe crystals were studied theoretically by Silvaco TCAD software simulation.The sub-bandgap illumination with a wavelength of 890 nm and intensity of 8×10?8 W/cm2 were used in the simulation to explore the space charge distribution and internal electric field distribution in CdZnTe crystals.The simulation results show that the deep level occupation faction is manipulated by the sub-bandgap illumination,thus space charge concentration can be reduced under the bias voltage of 500 V.A flat electric field distribution is obtained,which significantly improves the charge collection efficiency of the CdZnTe detector.Meanwhile,premised on the high resistivity of CdZnTe crystal,the space charge concentration in the crystal can be further reduced with the wavelength of 850 nm and intensity of 1×10?7 W/cm2 illumination.The electric field distribution is flatter and the carrier collection efficiency of the device can be improved more effectively.     

Spin texturing in a parabolically confined quantum wire with Rashba and Dresselhaus spin-orbit interactionsSpin texturing in a parabolically confined quantum wire with Rashba and Dresselhaus spin-orbit interactionsSpin texturing in a parabolically confined quantum wire with Rashba and Dresselhaus spin-orbit interactions

In this study, we investigate theoretically the effect of spin-orbit coupling on the energy level spectrum and spin texturing of a quantum wire with a parabolic confining potential subjected to the perpendicular magnetic field. Highly accurate numerical calculations have been carried out using a finite element method. Our results reveal that the interplay between the spin-orbit interaction and the effective magnetic field significantly modifies the band structure, producing additional subband extrema and energy gaps. Competing effects between external field and spin-orbit interactions introduce comp｜ex features in spin texturing owing to the couplings in energy subbands. We obtain that spatia~ modulation of the spin density along the wire width can be considerably modified by the spin-orbit coupling strength, magnetic field and charge carrier concentration.     

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

For ferromagnetic metal （FM）/semiconductor （SO） structure with ohmic contact, the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated. Based on the general model we established here, spin injection efficiency under different injection current levels is calculated. Under a reasonable high injection current, current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current. An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact, which means that efficient spin injection from FM into SC via ohmic contact is possible. The reported dependence of current polarization on temperature is verified quantitatively. To achieve even larger spin injection efficiency, a gradient doping semiconductor is suggested to enhance the drift current effect.     

Spin switching in antiferromagnets using Néel-order spin-orbit torques

Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin–orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.     

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors.A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current.The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron-hole pairs,and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field.The field dependence,the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.The simulated magnetoresistance shows good consistency with the experimental results.     

Spin current transmission in Co1-xTbx films

We investigate the spin to charge conversion phenomena in Y₃Fe₅O₁₂/Pt/Co_1-xTb_x/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.     

Spin Pumping from a Quantum Dot in the Presence of Decoherence

We study the pumped spin current of an interacting quantum dot tunnel coupled to a single lead in the presence of electron spin resonance （ESR） field. The spin decoherence in the dot is included by the Bffttiker approach. Using the nonequilibrium Green＇s function technique, we show that ESR-induced spin flip can generate finite spin current with no charge transport. Both the Coulomb interaction and spin decoherence decrease the amplitude of spin current. The dependence of pumped spin current on the intensity and frequency of ESR field, and the spin decoherence is discussed.     

Study on the mixing of fluid in curved microchannelswith heterogeneous surface potentials

In this paper the mixing of a sample in the curved microchannel with heterogeneous surface potentials is analysed numerically by using the control-volume-based finite difference method. The rigorous models for describing the wall potential and external potential are solved to get the distribution of wall potential and external potential, then momentum equation is solved to get the fully developed flow field. Finally the mass transport equation is solved to get the concentration field. The results show that the curved microchannel has an optimized capability of sample mixing and transport when the heterogeneous surface is located at the left conjunction between the curved part and straight part. The variation of heterogeneous surface potential $\psi_{\rm n}$has more influence on the capability of sample mixing than on that of sample transport. The ratio of the curved microchannel's radius to width has a comparable effect on the capability of sample mixing and transport. The conclusions above are helpful to the optimization of the design of microfluidic devices for the improvement of the efficiency of sample mixing.     

Magnetic Properties and Magnetoresistance of CdMnS：Au Based Structures Prepared by Co-evaporation

Polycrystalline CdMnS and CdMnS：Au films with hexagonal structure on Si（111） substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS：Au samples with an average crystallite size of 90nm and Mn concentration of 5.0at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS：Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77K.     

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.     

Correlation between microbubble-induced acoustic cavitation and hemolysis in vitro

Microbubbles promise to enhance the efficiency of ultrasound-mediated drug delivery and gene therapy by taking advantage of artificial cavitation nuclei.The purpose of this study is to examine the ultrasound-induced hemolysis in the application of drug delivery in the presence of microbubbles.To achieve this goal,human red blood cells mixed with microbubbles were exposed to 1-MHz pulsed ultrasound.The hemolysis level was measured by a flow cytometry,and the cavitation dose was detected by a passive cavitation detecting system.The results demonstrate that larger cavitation dose would be generated with the increase of acoustic pressure,which might give rise to the enhancement of hemolysis.Besides the experimental observations,the acoustic pressure dependence of the radial oscillation of microbubble was theoretically estimated.The comparison between the experimental and calculation results indicates that the hemolysis should be highly correlated to the acoustic cavitation.     

Systematic studies on α-decay half-lives for super heavy nuclei

Radioactive decay of super heavy nuclei via the emission of α-particles has been studied theoretically in the preformed cluster model (PCM). The nucleus-nucleus (NN) potential is obtained by double folding the density distributions of the α-particle and the daughter nucleus with a realistic effective interaction. The M3Y effective interaction, supplemented by a zero-range pseudo-potential for exchange term, is used to calculate the NN potential. The α decay half-lives for 317 nuclei at Z=102–120 are performed in the PCM framework with the theoretical Q values extracted from the Mller-Nix-Kratz and Liran-Marinov-Zeldes mass tables and are compared with the experimental data. The calculated results are also compared with those obtained by using Q values from the Muntian-Hofmann-Patyk-Sobiczewski and Myers-Swiatecki mass estimates.     

Angle-dependent spin waves in antidot bilayers

Ferromagnetic resonance is introduced to examine the microwave frequency response of Ni Fe/Ir Mn bilayers, patterned as antidot arrays. In the experiment, field direction dependence on mode is obtained by rotating the applied magnetic field. We find that at a given resonance frequency, the dependence of the resonance field on the angle has a tendency of sinusoid/cosine variation in the experiment. From micromagnetic simulation it can be seen that spin waves are localized between dots from a given mode profile. This is caused by a demagnetization distribution with a larger value in the center of the two nearest dots than that of the next-nearest dots.     

Near-field properties of a shell nanocylinder pair with gain materials

We study the near-field response of a shell nanocylinder pair,with its core filled by gain materials,using a twodimensional finite-difference time-domain method.It is shown that the gain materials in the core of the cylinder can compensate for the intrinsic absorption of the metal shell,leading to local-field enhancement in the gap of the active pair.A linear dependence is found between the field enhancement and the gain coefficient at resonance.The detailed physics is studied by calculating the electrical-field distribution of the shell pair filled with different gain materials.The influence of the gap width and the shell thickness on the interaction of two adjacent active shell cylinders is also investigated.     

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]₂multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.     

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

Spin-dependent transport in ferromagnet/organic-ferromagnet/metal junctions is investigated theoretically. The results reveal a large tunneling magnetoresistance up to 3230% by controlling the relative magnetization orientation between the ferromagnet and the central organic ferromagnet. The mechanism is explained by distinct efficient spin-resolved tunneling states in the ferromagnet between the parallel and antiparallel spin configurations. The key role of the organic ferromagnet in generating the large magnetoresistance is explored, where the spin selection effect is found to enlarge the difference of the tunneling states between the parallel and antiparallel configurations by comparing with the conventional organic spin valves. The effects of intrinsic interactions in the organic ferromagnet including electron–lattice interaction and spin coupling with radicals on the magnetoresistance are discussed. This work demonstrates a promising potential of organic ferromagnets in the design of high-performance organic spin valves.     

The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays

The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes （LEDs） have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi- quantum well （MQW） LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence （PL） spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows： 1） the improvement in crystal quality, namely the reduction in V-defects; 2） the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3） the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.