| Magnetic Properties and Magnetoresistance of CdMnS：Au Based Structures Prepared by Co-evaporation |
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| 引用本文： | 何俊,黎明,金大训,李载春,李东京,付德君,姜泰远.Magnetic Properties and Magnetoresistance of CdMnS：Au Based Structures Prepared by Co-evaporation[J].中国物理快报,2010,27(7):282-284. |
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| 作者姓名： | 何俊 黎明 金大训 李载春 李东京 付德君 姜泰远 |
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| 作者单位： | [1]Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University Wuhan 430072 [2]Quantum-Functional Semiconductor Research Center （QSRC）, Dongguk University, 3-26 Seoul 100-715, Korea |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 10875090 and 10875091, and by the Korean Science and Engineering Foundation through QSRC at Dongguk University. |
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| 摘 要： | Polycrystalline CdMnS and CdMnS：Au films with hexagonal structure on Si（111） substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS：Au samples with an average crystallite size of 90nm and Mn concentration of 5.0at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS：Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77K.
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| 关 键 词： | 六方结构 金薄膜 蒸发法 磁电阻 制备 基础 磁性 铁磁特性 |
| 收稿时间： | 2009-12-18 |
Magnetic Properties and Magnetoresistance of CdMnS:Au Based Structures Prepared by Co-evaporation |
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| HE Jun,LI Ming,D. H. Kim,J. C. Lee,D. J. Lee,FU De-Jun,T. W. Kang.Magnetic Properties and Magnetoresistance of CdMnS:Au Based Structures Prepared by Co-evaporation[J].Chinese Physics Letters,2010,27(7):282-284. |
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| Authors: | HE Jun LI Ming D H Kim J C Lee D J Lee FU De-Jun T W Kang |
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| Affiliation: | Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University Wuhan 430072 Quantum-Functional Semiconductor Research Center (QSRC), Dongguk University, 3-26 Seoul 100-715, Korea |
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| Abstract: | Polycrystalline CdMnS and CdMnS:Au films with hexagonal structure on Si(111) substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS:Au samples with an average crystallite size of 90 nm and Mn concentration of 5.0 at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS:Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77k |
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| Keywords: | 85 50 Gk 85 30 De |
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