掺Mn对NiFeGa磁性形状记忆材料单晶特性的影响

在单晶Ni₅₄Fe₁₉Ga₂₇中掺入少量Mn，对增强磁交换相互作用，提高居里温度和稳定了B2相并增强晶格的刚度，起到了非常明显的作用.Mn的存在使样品中取向内应力得以保持，提高了变体择优取向的水平，大大提高了单晶的相变应变和磁场增强作用.发现内应力对超弹性性质的影响也很明显. 关键词： 磁性形状记忆合金 NiFeGa 单晶 超弹性     

Novel Fe_3O_4@SiO_2@Ag@Ni trepang-like nanocomposites:High-efficiency and magnetic recyclable catalysts for organic dye degradation

A facile step-by-step approach is developed for synthesizing the high-efficiency and magnetic recyclable Fe_3O_4@SiO_2@Ag@Ni trepang-like nanocomposites.This method involves coating Fe_2O_3 nanorods with a uniform silica layer,reduction in 10%H_2/Ar atmosphere to transform the Fe_2O_3 into magnetic Fe_3O_4,and finally depositing Ag@Ni core-shell nanoparticles on the L-lysine modified surface of Fe_3O_4@SiO_2 nanorods.The fabricated nanocomposites are further characterized by x-ray diffraction,transmission electron microscopy,scanning electron microscope,Fourier transform infrared spectroscopy,and inductively coupled plasma mass spectroscopy.The Fe_3O_4@SiO_2@Ag@Ni trepang-like nanocomposites exhibit remarkably higher catalytic efficiency than monometallic Fe_3O_4@SiO_2@Ag nanocomposites toward the degradation of Rhodamine B(RhB) at room temperature,and maintain superior catalytic activity even after six cycles.In addition,these samples could be easily separated from the catalytic system by an external magnet and reused,which shows great potential applications in treating waste water.     

Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.     

光纤网络中的云数据并行调度

光纤网络的通信质量受到云数据调度均衡性影响很大,为了改善光纤网络通信质量,提高网络中云数据传输的吞吐量和保真率,通过云数据并行调度,实现云数据传输均衡,提出一种基于自适应判决反馈均衡的光纤网络云数据并行调度模型。构建光纤网络通信的传输信道模型,采用最小均方误差估计方法进行光纤网络的量化融合估计,运用匹配滤波检测器进行云数据中的干扰滤波处理,结合自适应判决反馈均衡方法进行信道均衡,在均衡的信道中对滤波输出的云数据进行并行调度和多线程输出调制。仿真结果表明,采用该方法进行光纤网络中的云数据并行调度的均衡性较好,输出数据的保真率较高,误码率较低,改善了光纤网络的整体性能。     

Si掺杂的铁磁形状记忆合金Co50Ni21Ga29Six的物性研究

成功生长了Co₅₀Ni₂₁Ga₂₉:Si(x=1,2)单晶样品,对其磁性,马氏体相变及其相关性质进行了细致的测量.发现掺Si成分的单晶具有非常迅速的马氏体相变行为、2.5％的大相变应变、大于100 ppm的磁感生应变和4.5％的相变电阻.进一步研究指出,在CoNiGa合金中掺入适量Si元素,能够降低材料的马氏体相变温度,减小相变热滞后,提高材料的居里温度,并使得磁性原子的磁矩有所降低.尤其重要的是Si元素的添加能够增大材料马氏体的磁晶各向异性能,改善马氏体变体的迁移特性,从而获得更大的磁感生应变. 关键词： 铁磁形状记忆合金 Heusler合金 50Ni₂₁Ga₂₉Si_x')" href="#">Co₅₀Ni₂₁Ga₂₉Si_x     

Controlled synthesis of ferromagnetic MnSe_x particles

The MnSe_x(x = 1,2) nanoparticles were synthesized under hydrothermal condition,by reaction of the reduced selenium and Mn~(2+) ion in the presence of hydrazine and acetic acid.By precisely controlling the pH value of the solution,a series of MnSe_x particles were synthesized.The structure and morphology of as-prepared particles were examined with x-ray diffractometer(XRD),transmission electron microscopy(TEM),and scanning electron microscopy(SEM).The average sizes of as-prepared particles varied from nanoscale to microscale with pH value increase.Furthermore,the nucleation and growth mechanism associated with pH values were discussed,which can be applied to the hydrothermal synthesis of metal chalcogenide in general.Finally,the optical and magnetic properties of as-prepared particles were measured.All as-made particles exhibit a ferromagnetic behavior with low coercivity and remanence at room temperature.     

山东大学开设文科物理课程的实践与思考

开设文科物理,是培养文科生的科学思维模式,加强文科生的科学素养的一个重要途径.本文针对文科物理"教什么?怎么教?"两个问题,从课程内容、授课模式、授课效果等几方面介绍在山东大学初次开设文科物理的情况.结果显示,联系日常生活、结合科技前沿的内容设计,课堂教学结合线上自学的教学模式,得到学生的认可和好评.     

Spin-independent transparency of pure spin current at normal/ferromagnetic metal interface

The spin transparency at the normal/ferromagnetic metal(NM/FM) interface was studied in Pt/YIG/Cu/FM multilayers. The spin current generated by the spin Hall effect(SHE) in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect(ISHE) in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents(σ(sc)), the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electrochemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe_(20)Ni_(80) (Py) than that of Ni is obtained from the nonlocal voltage measurements.     

Fe和Co元素在铁磁性形状记忆合金Mn50Ni25－xFe(Co)xGa25中的作用

为了进一步改善材料的性能和探索新的材料，将Mn₂NiGa合金中的Ni元素分别用Fe和Co替代，制备了Mn₅₀Ni_25-xFe(Co)_xGa₂₅系列合金. 研究了Fe和Co元素对Mn₂NiGa合金的结构、马氏体相变行为、磁性和机械性能等方面的影响. 关键词： 铁磁形状记忆合金 Heusler合金 50Ni_25-xFe(Co)_xGa₂₅')" href="#">Mn₅₀Ni_25-xFe(Co)_xGa₂₅     

Si掺杂的铁磁形状记忆合金Co50Ni21Ga29Six的物性研究

成功生长了Co50Ni21Ga29:Si(x=1,2)单晶样品,对其磁性,马氏体相变及其相关性质进行了细致的测量.发现掺si成分的单晶具有非常迅速的马氏体相变行为、2.5%的大相变应变、大于100 ppm的磁感生应变和4.5%的相变电阻.进一步研究指出,CoNiGa合金中掺入适量Si元素,能够降低材料的马氏体相变温度,减小相变热滞后,提高材料的居里温度,并使得磁性原子的磁矩有所降低.尤其重要的是Si元素的添加能够增大材料马氏体的磁晶各向异性能,改善马氏体变体的迁移特性,从而获得更大的磁感生应变.