Enhanced Field Emission of Composite Au Nanostructured Network on Si Nanoporous Pillar Array

Nanocrystallites Au particles are deposited on a well-aligned silicon nanoporous pillar array （Si-NPA） surface through immersion plating to form an Au/Si-NPA composite system. It is found that a large number of Au nanoparticles are accumulated on the bottom of Si pillars to form a regular network structure. By studying the field emission properties of such an Au/Si-NPA composite system, we find that the Au/Si-NPA exhibits good field emission properties, with staring field about 2 V/μm and emission current density 67μA/cm^2 at 7.59 V/μm. The enhanced field emission can be deduced from the unique morphology and structure of Au/Si-NPA.     

Ab initio investigation of boron nanodevices: conductances of the different geometric conformations

Conductances of different geometric conformations of boron ribbon devices are calculated by the ab initio method. The I-V characteristics of three devices are rather different due to the difference in structure. The current of the hexagonal boron device is the largest and increases nonlinearly. The current of the hybrid hexagon-triangle boron device displays a large low-bias current and saturates at a value of about 5.2 μA. The current of the flat triangular boron flake exhibits a voltage gap at low bias and rises sharply with increasing voltage. The flat triangular boron device can be either conducting or insulating, depending on the field.     

Ultraviolet Phototransistors on AlGaN/GaN Heterostructures

We report on the fabrication and characterization of phototransistors based on AIGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions： as a high electron mobility transistor （HEMT） and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170mS/ram, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35 GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700 A/W at the wavelength of 362nm.     

Study of X-ray Kirkpatrick-Baez imaging with single layer

The X-ray Kirkpatrick-Baez （KB） imaging experiment with single layer is implemented. Based on the astigmatism aberration and residual geometric aberration of a single mirror, a KB system with 16^x mean magnification and approximately 0.45°grazing incidence angle is designed. The mirrors are deposited with an Ir layer of 20-am thickness. Au grids backlit by X-ray tube of 8 keV are imaged via the KB system on scintillator charge-coupled device （CCD）. In the ±80 #m field, resolutions of less than 5 #m are measured. The result is in good agreement with the simulated imaging.     

Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

The degradation of AlGaN/GaN high electron mobility transistors （HEMTs） has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance RGate, channel resistance R channel, gate current IG,off at VGS=-5 and VDS=0.1 V, and drain current ID,max at VGS=2 and VDS=5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail.     

High-Temperature Operation of 8.5 μm Distributed Feedback Quantum Cascade Lasers

We present a distributed feedback quantum cascade laser （DFB-QCL） emitting at a wavelength of 8.5μm and operating up to 420K （147℃） with a low-threshold current density in pulsed mode. The DFB-QCLs studied are based on a four-well active design; the central portion of the waveguide consists of 60 periods of lattice matched InP-based InGaAs/AlInAs. In the design of the device, an active structure with lower doping and a deep-top grating process are utilized to achieve high temperature operation with a lower-threshold current density. At 420K, a low-threshold current density of 3.28 kA/cm^2 and a single mode peak power of 15mW are achieved on an epilayer-up mounting device with ridge width of 26μm and cavity length of 3.0mm. A side mode suppression ratio of 25 dB at 420 K is obtained.     

Experimental Investigation on Low Magnetic Field Operation of an Overmoded Slow-Wave High-Power Microwave Generator

The experimental results of an overmoded slow-wave high-power microwave generator operated at low magnetic field are presented. The feasibility of low magnetic field operation is investigated both theoretically and experimentally based on the characteristics of the overmoded slow-wave device. The experiments were carried out at the Spark-2 accelerator. Under the condition of guiding magnetic field strength of 0.55 T, diode voltage of 4 74 k V,and beam current of 5.2kA, a microwave was generated with power of 510 MW, mode of TM01, and frequency of 9.54 GHz. The relative half-width of the frequency spectrum is less than 1%, and the beam-to-microwave efficiency is about 21% in our experiments.     

Zirconium Aided Epitaxial Growth of In_xSe_y on InP(111) Substrates

Layered material indium selenide(In_xSe_y) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When codepositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃ at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In_xSe_y layer emerges on top of the insulating ZrSe_2 layer. Different archetypes, such as InSe, α-In_2Se_3 and β-In_2Se_3, are found in the In_xSe_y layers. A negative magnetoresistance of 40% at 2 K under 9 T magnetic field is observed. Such an In_xSe_y/ZrSe_2 heterostructure with good lattice-matching may serve as a candidate for device applications.     

Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_on,sp) are obtained. The results indicate that the HKSD device has a higher BV and lower R_on,sp compared to the SD device and HK device.     

A-188 V 7.2Ω·mm~2,P-channel high voltage device formed on an epitaxy-SIMOX substrate

This paper proposes a new n +-charge island (NCI) P-channel lateral double diffused metal-oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate.Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n +-regions on the interface of a buried oxide layer,and therefore the electric field of a dielectric buried layer (E I) is enhanced by these holes effectively,leading to an improved breakdown voltage (BV).The V B and E I of the NCI P-channel LDMOS increase to-188 V and 502.3 V/μm from 75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer,respectively.The influences of structure parameters on the proposed device characteristics are investigated by simulation.Moreover,compared with the conventional device,the proposed device exhibits low special on-resistance.     

Au nanorods-incorporated plasmonic-enhanced inverted organic solar cells

The effect of Au nanorods(NRs) on optical-to-electric conversion efficiency is investigated in inverted polymer solar cells, in which Au NRs are sandwiched between two layers of Zn O. Accompanied by the optimization of thickness of Zn O covered on Au NRs, a high-power conversion efficiency of 3.60% and an enhanced short-circuit current density(J SC) of10.87 m A/cm2 are achieved in the poly(3-hexylthiophene): [6,6]-phenyl-C61-butyric acid methyl ester(P3HT:PC60BM)-based inverted cell and the power conversion efficiency(PCE) is enhanced by 19.6% compared with the control device. The detailed analyses of the light absorption characteristics, the simulated scattering induced by Au NRs, and the electromagnetic field around Au NRs show that the absorption improvement in the photoactive layer due to the light scattering from the longitudinal axis and the near-field increase around Au NRs induced by localized surface plasmon resonance plays a key role in enhancing the performances.     

Electric field of a buried interfacial region measured by positron-lifetime spectroscopy

Positrons from a radioactive source are implanted into a reverse-biased metal–semiconductor contact and are drifted back towards the contact by the internal electric field where they trap into voids and annihilate. The electric field dependent interface annihilation fraction is monitored by way of the intensity of the long (∼400–500 ps) void lifetime component using positron-lifetime spectroscopy. Unlike previous analyses of such systems a numerical model involving positron drift, annihilation and trapping into the interfacial state has been constructed to describe the positron dynamics in the presence of the non-uniform junction electric field. The use of the positron-lifetime technique in probing the internal electric field at buried contacts is thus demonstrated. Results obtained using the numerical method for the Au, Al and Ni/Semi-Insulating (SI)-GaAs contact systems are found to be consistent with the findings of previous studies on the Au/SI-GaAs system. Received: 29 November 2000 / Accepted: 26 February 2001 / Published online: 25 July 2001     

On interface dipole layers between C60 and Ag or Au

C₆₀ layers on polycrystalline Ag and Au are studied by photoelectron spectroscopy. At these metal/C₆₀ interfaces an electron transfer occurs from the metal to the lowest unoccupied orbital of C₆₀. We found in the case of the polycrystalline Ag/C₆₀ interface a dipolar layer with its associated electric field in the direction corresponding to the charge transfer, so pointing from the substrate to the adsorbent. Yet, at the Au/C₆₀ interface we observed an overall electric field pointing from C₆₀ towards the metal. We discuss our observations in terms of charge transfer, screening and hybridization effects and propose the occurrence of a hybridization mechanism similar to back-bonding at the Au/C₆₀ interface. We show that the alignment of energy levels at the metal/C₆₀ interface cannot simply be deduced using the metal workfunction and the frontier orbitals of C₆₀, including screening effects, since hybridization effects may strongly alter the interfacial energy level structure. Our experimental findings on the polycrystalline metal/C₆₀ interfaces indicate an at-most weak dependence of the Fermi level of the C₆₀ overlayer on the workfunction of the polycrystalline metal substrate. These interfaces are found in donor–acceptor-based organic photovoltaic devices and our results may help to understand the electrical characteristics of these devices. Received: 26 September 2001 / Accepted: 15 January 2002 / Published online: 3 June 2002     

Characterization of SnO2/Pb2CrO5 thin film/metal photovoltaic device

The photovoltaic behavior in a design of SnO₂/Pb₂CrO₅ thin film/metal (Au or Al) is described as functions of light intensity and wavelength for two different illumination directions. The Pb₂CrO₅ thin film in each device is formed over the SnO₂ coated glass substrate by an electron-beam evaporation technique. When illuminated from the metal side, the device with Au or Al shows the positive or the negative photovoltage, respectively. For the illumination from the SnO₂ side, the device with Au has the negative photovoltage at the short wavelength, and the positive one at the longer, while the device with Al has the negative photovoltage at both wavelength regions. These photovoltaic devices have two junctions at both sides of the Pb₂CrO₅ thin film. The band model of each device is also discussed.     

氮化铌纳米线光学特性

氮化铌(NbN)纳米线是超导纳米线单光子探测器(SNSPD)常用的光敏材料,其光学性质是影响SNSPD性能的关键因素.本文结合实验数据和仿真结果,系统研究了多种NbN超导纳米线探测器器件结构的光学特性,表征了以下四种器件结构下的反射光谱以及透射光谱:1)双面热氧化硅衬底背面对光结构;2)双面SiN硅衬底背面对光结构;3)硅衬底上以金层+SiN缓冲层为反射镜的正面对光结构;4)以分布式布拉格反射镜(DBR)为衬底的正面对光结构.并在上述四种器件结构基础上,生长了不同厚度的NbN薄膜,观察不同厚度NbN薄膜的吸收效率.经分析,发现在不同器件结构下的最佳NbN厚度与光吸收率的关系如下:双面热氧化硅衬底上的NbN层在1606 nm处最大吸收率为91.7%,其余结构在最佳NbN厚度条件下吸收率都能达到99%以上.其中双面SiN的硅衬底结构中最大吸收率为99.3%, Au+SiN为99.8%, DBR为99.9%.最后,将DBR器件实测结果与仿真结果进行了差异性分析.这些结果对高效率SNSPD设计与研制具有指导意义.     

EFM phase investigation of the metal-organic film interface

Phase sensitive electrostatic force microscopy (EFM phase) investigations of semiconducting polymers, poly(3-hexylthiophene) (P3HT) and poly(9,9-dioctylfluorene) (F8), are described, aimed at understanding the metal/polymer interfaces. The electrostatic behaviour and potential distributions of the Au/polymer/Au structure under various biases with emphasis on top and bottom Au contacts are presented. We observe, by analysing EFM phase data, that the top and bottom contacts of Au can have drastic effects on the device performance. Moreover, differences in conductivity of conjugated polymers (P3HT > F8) are also reflected in EFM phase measurements, which correlate well with I-V measurements. Detailed analysis indicates that the influence of metal/film interfaces depends strongly on both the ability of charge transport properties of the organic films and the type of surface modification.     

苯基分子器件 量子相干输运第一性原理研究

摘要：分子器件在纳米尺度下,电子的相干性将对体系的电导产生重大影响。本文基于第一性原理计算研究了苯分子连接于一维金属电极下的电荷输运性质。发现一维金电极连接下,不同的连接方式（para与meta）体系下的电导将会有显著差别,而一维铂电极连接下,体系的电导差别不大。我们通过计算电极的能带,发现金电极与铂电极在费米面处的散射态数目有差别。 当量子相干效应导致散射态局域化发生改变时,由于铂电极的通道数较多,电子依然可以通过扩展的通道输运,因此不同连接方式下的电导变化不明显。     

High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) applications

The fabrication of high reflective Ni/Ag/(Ti, Mo)/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) are proposed and considered, Ni/Ag/Au Ohmic contacts are also fabricated to compare their resulting reflectivities. From secondary ion mass spectrometry (SIMS) depth profiles, it indicates that the Au in-diffusion occurs in Ni/Ag/Au contacts after annealing. It is considered that Au in-diffusion, which is intermixed with Ag, Ni and GaN in Ni/Ag/Au contacts after annealing, is responsible for the resulting low reflectance (63% at the wavelength of 465 nm). To avoid Au in-diffusion and enhance the reflectivity, a diffusion barrier metal (Ti or Mo) between Ni/Ag and Au is fabricated and examined. It is demonstrated and found that an insertion of diffusion barrier metal of Ti enables to block Au diffusion effectively and also improve the reflectivity significantly, up to 93%.     

双金属纳米天线在少周期激光中的宽带超快电磁响应

研究了耦合的核壳双金属纳米粒子天线的光场增强与超快时域响应. 在少周期激光的应用中, 如表面等离激元金属纳米器件中的超快响应探测元件, 这种双金属天线展示了超宽带共振频谱及控制局域表面等离激元增强的能力. 研究了二聚体、三聚体以及七聚体, 并且发现三聚体Ag/Au核壳结构显现了极高的场增强能力, 其场振幅增强因子超过了120, 并在5 fs的时间内场振幅迅速衰减为30, 保持了超快的光学响应特性. 利用该结构的表面等离激元增强效应产生高次谐波, 对于产生超快阿秒脉冲有着潜在的重要应用价值. 关键词： 纳米光学天线 双金属球壳结构 少周期激光脉冲 表面等离激元     

Magnetic field heating study of Fe-doped Au nanoparticles

Fe-doped Au nanoparticles are ideal for biological applications over magnetic oxides due to their conjugation chemistry, optical properties, and surface chemistry. We present an AC magnetic field heating study of 8 nm Fe-doped Au nanoparticles which exhibit magnetic behavior. Magnetic heating experiments were performed on stable aqueous solutions of the nanoparticles at room temperature. The nanoparticles exhibit magnetic field heating, with a specific absorption rate (SAR) of 1.84 W/g at 40 MHz and H=100 A/m. The frequency dependence of the heating follows general trends predicted by power loss equations and is similar to traditional materials.