氧缺位对单相YBa2Cu3O7-x热电势率的影响

研究了氧缺位对单相YBa₂Cu₃O_7-x体系超导电性及热电势率的影响。结果表明,超导转变温度随氧缺位的增加而下降,热电势率随氧缺位的增加而增大。由实验结果推断,单相YBa₂Cu₃O_7-x的多数载流子为空穴。存在较大的声子曳引热电势表明。在YBa₂Cu₃O_7-x超导体中存在较强的电-声子相互作用。 关键词：     

四方和正交YBa2Cu3O7-x体系的输运性质

测量了一系列在不同淬火温度下制得的单相YBa₂Cu₃O_7-x样品的电阻和热电势率。热电势率与温度的关系表明,在正交结构的超导体中,存在声子曳引峰,而在四方结构的样品中,声子曳引峰消失,说明电-声子相互作用对超导电性有影响。根据热电势率数据,估算了样品的费密能和载流子浓度。 关键词：     

LixNayCoO2的制备和热电性质

用固相反应方法，成功地合成了具有交互生长结构的Li_xNa_yCoO₂单相多晶系列样品. 热电势测量表明，该系统的室温热电势比Na_xCoO₂体系约高出60μV/K. 基于空穴载流子具有O2p特征，提出Li_xNa_yCoO₂中额外的热电势来源于氧空穴的占位熵. 关键词： xNa_yCoO₂')" href="#">Li_xNa_yCoO₂ 热电势 热电材料     

Bi_2Sr_2CaCu_2O_8单晶a-b平面热电势率的各向异性

测量了Bi_2Sr_2CaCu_2O_8单晶a方向的热电势率Sa和b方向的热电势率Sb与温度T的关系,发现在a-b平面内热电势率存在各向异性。认为Sa与Sb的差异来源于b方向的调制结构,并用扩散热电势率Sd,声子曳引热电势率Sg和相关跳跃热电势率Sh三种贡献,对实验结果进行了解释。     

新型超导体MgB2的热电势和电阻率研究

测量了MgB₂的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T²依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度T_c(零电阻366K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能E_F、能带宽度 关键词： 新型超导体 热电势 电阻率     

混合自旋(S=1,1/2)模型具有再次近邻反铁磁相互作用晶格基态

本文发展文献[1]的方法到两种不同自旋的原子(S_a=1,S_b=1/2)构成的晶格中,计算了简单立方晶格在具有再次近邻反铁磁相互作用下在外磁场中的基态自旋结构、能量和相界。从文中给出的相图可知:这种晶格有两种反铁磁自旋结构,有四种亚铁磁自旋结构。 关键词：     

超巨磁电阻材料Pr2/3Sr1/3MnO3薄膜输运性质的研究

对1/f噪声缺口的超巨磁电阻Pr_2/3Sr_1/3MnO₃薄膜样品从10K到室温的热电势值进行了测量，热电势为负值，低温下随温度线性变化，表现为金属扩散热电势，在150K开始急剧减小，过渡到与温度T成反比的变化关系，与小极化子模型相符.结合在电阻极大温度附近对电阻和1/f噪声行为的讨论，对于发生在电阻极大温度附近的相变过程，结果支持源于相分离的渝渗模型. 关键词： 稀土锰氧化物 热电势 渝渗模型     

表面效应对γ-Fe2O3微粉饱和磁化强度的影响

我们制备了直径为80—700A的γ-Fe₂O₃微粉,测量了它的比饱和磁化强度σ_s和比表面积S_a,得出经验公式:σ_s(s=σ_s(∞)(1—aS_a)。假定微粉由两部分组成:第一部分是表面层,在磁场的作用下,它的磁矩只能转到与磁场成某个角度;第二部分是内部,它的磁矩可以转到磁场的方向。从这个简单的模型出发,上述的经验公式可以得到较好的解释。 关键词：     

纳米SiO2复合对Mg3Sb2基材料热电性能的影响

Mg₃(Sb,Bi)2基热电材料由于其优异的热电性能和较低的成本近来受到广泛的关注.本研究通过将纳米SiO₂复合进成分为Mg_3.275Mn_0.025Sb_1.49Bi_0.5Te_0.01的基体相中,考察其热电输运性能的变化及机制.结果表明,当SiO₂复合进Mg₃Sb₂基材料中时,由于引进大量的微小晶界,能有效地散射声子,促使晶格热导率降低,优化热输运性能,如SiO₂体积含量为0.54%时,室温时热导率由复合前的1.24 W/(m·K)降至1.04 W/(m·K),降幅达到15%;同时其对电子也产生强烈的散射作用,导致迁移率和电导率大幅下滑,结果表现为近室温区功率因子剧烈衰减,恶化了电输运性能.电性能相对于热性能较大降低幅度使得材料在整个测试温区的热电优值没有得到改善.纳米SiO₂作为Mg₃Sb₂     

Li2K(IO3)3与Li2NH4(IO3)3的晶体结构

本文用X射线粉末法测定了Li₂K(IO₃)₃与Li₂NH₄(IO₃)₃的晶体结构和原子参数。发现Li₃K(IO₃)₃,Li₂NH₄(IO₃)₃与Li₂Rb(IO₃)₃同晶型,属单斜晶系,空间群为P2₁/α,每个单胞含有四个化合式量。室温的点阵常数分别为α=11.198?,b=11.046?,c=8.254?,β=111.53°,及α=11.327?,b=11.078?,c=8.341?,β=111.87°。讨论了二元化合物的形成与离子半径的关系。 关键词：     

Transport properties of MgB2 single crystals doped with electrons and holes

The thermoelectric power of C, Mn, C:Li, and Al:Li substituted MgB₂ single crystals has been investigated in the temperature range 10-300 K. Both the in-plane (S_ab) and the out-of-plane (S_c) thermopowers are positive for the non-substituted crystal and both S_ab and S_c change a sign for crystals doped with electrons where C is substituted for B in the amount larger than 5 at%. When Li is substituted for Mg, the π band rather than the σ band is doped with holes and the doping effects are much more subtle. The anisotropy ratio of the non-substituted crystal S_ab/S_c≈3 and this ratio is strongly reduced by the substitution of C. Isovalent magnetic Mn ions, which substitute for Mg with a drastic reduction of T_c, do not influence the values and temperature dependences of both S_ab and S_c.     

Thermoelectric power and phase transition of polycrystalline As2Te3 under pressure

The pressure dependence of the thermoelectric power of monoclinic As₂Te₃ is measured up to 10 GPa using a Mao-Bell diamond anvil cell. The thermoelectric power never reaches an absolute value greater than the ambient pressure value of 242 μV/K. Evidence of a phase transition is present between 6 and 8 GPa where the thermoelectric power reaches an absolute value of 225 μV/K after passing through a minimum of S≈75 μV/K. X-ray diffraction experiments confirm that the resulting structure is β-As₂Te₃, which is isostructural with Bi₂Te₃ and Sb₂Te₃.     

Comment on `Electronic Properties of Red P-Type Tl2S5 Single Crystals'

Recently, Gamal et al. [Chin. Phys. Lett. 22 (2005) 1530] reported the results of electrical conductivity, Hall effect and thermoelectric measurements on p-type Tl₂S₅ single crystals. From the experimental data for the temperature dependence of differential thermoelectric power, Gamal et al. determined thevalues of 2.66×10^-41kg and 2.50×10^-41kg, respectively, for the effective masses of electrons and holes in p-type Tl₂S₅, which are about ten orders of magnitude smaller than the free electron mass (9.11×10^-31kg). We argue that the anomalously small values obtained for the effective mass of chargecarriers in Tl₂S₅ have no physical significance.     

Electrical transport measurements in a quasi-onedimensional semiconductor ZrS3

We have used the technique of chemical vapour transport to prepare needle shaped single crystal of ZrS₃. Results of the measurements of d.c. resistivity. Hall coefficient and thermoelectric power of the temperature range 100–500 K are reported. All the samples exhibited semiconducting behaviour with a room temperature resistivity of about 15 Ω-cm and an activation energy of 0.20±0.02 eV. Room temperature thermoelectric power is -850 μVK^?1 and the dominant carriers are electrons. The thermoelectric power varies as (1/T), a behaviour associated with a typical semiconductor. Mobility at low temperatures is limited by ionized impurity scattering and is given by μ₁ = 6.5 × 10^?2T^3/2 cm²V^7-1 sec^?1. At high temperatures, phonon scattering is dominant and the mobility is given by μ₂ = 1.35 × 10⁺⁵T^?32 cm²V^?1 sec^?1.     

High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,     

Band structure calculations on the layered compounds FeGa2S4 and NiGa2S4

For the compounds FeGa₂S₄ and NiGa₂S₄ band structure calculations have been performed by the ab initio plane wave pseudo-potential method. The valence charge density distribution points to an ionic type of chemical bonding between the transition metal atoms and the ligand atoms. Two models for the pseudo-potentials are used to calculate the band structures: (a) only s and p electrons and (b) also the d-shells of the transition metal atoms are included in the pseudo-potentials. The differences between these two cases of band structures are discussed. Energy gap formation peculiarities are analysed for both crystals. Zak's elementary energy band concept is demonstrated for the energy spectra of the considered crystals.     

Etude par spectrometrie Mössbauer (57Fe) de FeMo2S4

We have investigated FeMo₂S₄ by transmission Mössbauer spectroscopy on the ⁵⁷Fe nucleus between 4.2 and 1037 K, using both powdered and single crystal samples.The temperature dependences of the isomer shift and the quadrupole splitting indicate the existence of ferrous ions with well localized 3d electrons. The two different crystallographic Fe sites cannot be separated over the experimental temperature range. The local symmetry of the iron site is lower than axial (η ~ 0.47) and the crystal field splittings Δ₁ and Δ₂ of the Fe²⁺ ? T_2g Orbitals, estimated by the Ingalls' method, are close to 250 and 900 cm^?1.The hyperfine field makes an angle of 14° with the normal on the plane (a, b), deviating a little from the direction of the magnetic moments determined to be perpendicular to (a, b) by neutron diffraction study.At higher temperatures, and more particularly near T_N, a line broadening is observed, and the spectra have to be fitted by a hyperfine field distribution. The broadening comes from the presence of about 7% “abnormal” Fe-sites observed in the paramagnetic spectra, and whose origin is discussed.The Néel temperature was determined to be 112 ± 1 K for the powdered sample and 106 ± l K for the single crystal.     

Thermoelectric power of quasi-one-dimensional Nb3X4 with X=S, Se andTe

The thermoelectric power of linear chain synthetic metals Nb₃X₄ (with X=S, Se and Te) was measured from 5 to 300 K. The thermopower is negative indicating a dominant transport by electrons. Common to three compounds, in lower temperature regions the thermopower rises linearly with temperature but soon saturates. With respect to Nb₃S₄ and Nb₃Se₄ we have found no special anomaly of the thermopower except for a little higher magnitude.With respect to Nb₃Te₄ anomalies in the thermopower vs temperature appear at about 80 and 20 K which are explained in terms of the charge- density-wave phase transition from the simultaneous measurement of the resistivity and the observation of the electron diffraction patterns.     

Oscillations quantiques des coefficients de pouvoir thermoelectrique et de conductivite thermique: theorie et mesures dans Cd3As2

Quantum oscillations have been observed in the thermoelectric power and thermal conductivity coefficients of a semiconductor Cd₃As₂ single crystal. Theoretical expressions for these coefficients, taking into account the Landau level broadening, are derived in this paper. The good agreement found between the thermoelectric power measurements and the corresponding theoretical expressions for the temperature and magnetic field dependence of the quantum oscillation amplitudes and the absolute values of the amplitudes has allowed us to calculate effective mass values which are in agreement with Shubnikov-de Haas measurements.