Pressure dependence of plasma parameters in medium-vacuum nitrogenarc discharge with the titanium cathode

The plasma properties of a medium-vacuum nitrogen arc discharge from a titanium cathode were studied. The arc chamber use was 400 mm in diameter and 600 mm in length. The cathode diameter and thickness were 64 and 25 mm, respectively. The experimental conditions are given as follows: pressure range=1×10^-3~2×10^-1 torr; N₂ gas flow rate=6 ml/min; arc current=50 A. Electric probe characteristics are measured as a function of pressure and distance from the cathode surface. The analytical results obtained show that the electron energy distribution takes 1-Mx at pressures above 1×10^-2 torr but 2-Mx at pressures under 4×10^-2 torr and that the electron density has a maximum value at a certain pressure. The Ti⁺, Ti⁺⁺, and N ⁺₂ ion spectral intensities are measured as a function of pressure and distance from the cathode surface. On comparison of these results and the electron density, the Ti⁺ spectral intensity turns out to be proportional to that of the electron density. This suggests that the major ion in the plasma volume is of the Ti⁺ species     

高Yb3+/Er3+掺杂的磷基有源光纤材料的光谱性质

研究了Yb³⁺/Er³⁺共掺60P₂O₅-15BaO-10Al₂O₃-5ZnO-10R₂O（R=Na,K）以P₂O₅为主体的磷基有源光纤材料的光谱性质,以及不同Yb³⁺/Er³⁺掺杂浓度对光谱性质的影响规律。当Er³⁺浓度为9.100×10¹⁹/cm³、Yb³⁺的掺杂浓度为5.407×10²⁰/cm³、Yb³⁺/Er³⁺浓度比为6：1时,玻璃样品在1 531 nm处的受激发射截面最大,为6.17×10^-21 cm²。同时,其荧光寿命为9.73 ms,荧光半高宽为53.16 nm,发射截面与半高宽的乘积为3.28×10^-32 m³,综合性能最佳。     

超薄EuF3电极修饰层对有机场效应晶体管性能的提升

采用EuF₃薄层修饰低功函数金属Ag源、漏电极,制备了CuPc有机场效应晶体管,研究了不同厚度EuF₃对器件性能的影响。结果表明,EuF₃的厚度由0 nm增至0.6 nm时,接触电阻由23.65×10⁵ Ω·cm减 至3.86×10⁵ Ω·cm,使得器件载流子迁移率由1.5×10^-3 cm²·V^-1·s^-1提高到4.65×10^-3 cm²·V^-1·s^-1。 UPS测试结果表明,薄层EuF₃在Ag与有机半导体间形成了界面偶极势垒,使源漏电极表面功函数增大,空穴注入势垒降低,Ag电极与有机半导体层界面的接触电阻减小,进而提升了空穴的注入效率。     

LiNbO3和LiTaO3晶体Er3+/Yb3+掺杂水热外延层室温吸收光谱分析

本文引入与浓度和厚度有关的k_NL待定参数, 在J-O理论基础上, 对Er³⁺/Yb³⁺掺杂的LiNbO₃和LiTaO₃单晶衬底上 的多晶水热外延样品进行了基于吸收光谱的拟合计算. LiNbO₃:Ω₂=2.34× 10^-20 cm², Ω₄=0.77× 10^-20 cm², Ω₆=0.31×10^-20 cm², k_NL=4.32× 10^-2 mol·m^-2. LiTaO₃:Ω₂=1.68×10^-20 cm², Ω₄=0.84×10^-20 cm², Ω₆=0.45×10^-20 cm², k_NL=9.17×10^-3 mol· m^-2. 该方法可尝试推广到粉体或胶体等难以直接获得浓度和厚度数据的体系. 经上转换发光测试及光谱参数计分析认为Er³⁺/Yb³⁺离子的掺杂浓度比为1:1的情况下, 样品呈现绿色上转换发光光谱; 可尝试以降低基质声子能量的方法提高⁴I_13/2能级 对²H_11/2和⁴S_3/2能级的量子剪裁效率.     

ZBLAN玻璃中Pr3+掺杂离子3P0和1D2能级的发光特性和寿命

对ZBLAN氟锆酸盐玻璃中Pr³⁺掺杂离子³P₀和¹D₂能级的寿命和发光特性进行了较详细的光谱学研究。首先测量了两种掺杂浓度(质量分数分别为1×10^-3,5×10^-3)的Pr³⁺:ZBLAN玻璃的吸收光谱,然后运用时间分辨激光光谱技术测量了³P₀和¹D₂能级在激光单光子共振激发下的荧光发射谱和能级寿命。将不同荧光发射谱带的强度和文献报道的Judd Ofelt理论计算辐射跃迁几率数值做了比较分析,证明了文献中理论计算结果的可靠性。由于浓度猝灭效应,在相同的激发条件下,掺杂浓度为1×10^-3样品的荧光发射强度明显大于5×10^-3样品的荧光发射强度。但是从我们的测量结果看,掺杂浓度对³P₀和¹D₂ 的能级寿命值无显著影响。掺杂浓度为1×10^-3时,Pr³⁺离子³P₀和¹D₂能级的寿命值分别为46,322μ_s。     

Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In_(0.24)Ga_(0.76)As_(0.21)Sb_(0.79)bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10~(-5)A/cm~2at 500 mV,thereby providing a detectivity of 1.55×10~(11)cm·Hz~(1/2)/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10~(-3)A/cm~2at-300 mV,thereby resulting in a detectivity of 2.71×10~(10)cm·Hz~(1/2)/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.     

Er~(3+)掺杂Na_5Lu_9F_(32)单晶体的红外光学特性

采用坩埚下降法成功地生长了Er~(3+)离子掺杂的Na_5Lu_9F_(32)(NLF)单晶体。测定了单晶体在400~2 500nm波段的吸收光谱与2.5~25μm红外波段的透过光谱。Na_5Lu_9F_(32)单晶体在400~7 150 nm宽波段范围具有好的光学透过性,在该波段的透过率达到90%。在透过光谱中几乎观察不到2.7μm中红外波段的吸收,说明单晶体中OH~-离子的含量极低。根据测定的吸收光谱,通过Judd-Ofelt理论计算了Er~(3+)在单晶体中的光学强度参数Ω_t(Ω_2=2.08,Ω_4=2.07,Ω_6=0.75),以及相应的辐射跃迁速率、荧光分支比和荧光寿命。根据Futchbauer-Ladenburg公式估算了样品的发射截面大约分别为1.42×10~(-20)cm~2(~4I_(13/2)→~4I_(15/2))和1.66×10~(-20)cm~2(~4I_(11/2)→~4I_(13/2))。在980 nm半导体激光器(LD)激发下,研究了单晶体的近红外1.5μm与中红外2.7μm的发射光谱特性。     

Ω＋Ω→（ΩΩ）Jπ=0＋＋X Cross section Calculation

The cross sections of Ω+Ω→(ΩΩ)_J^π=0⁺+X are studied by using an effective Hamiltonian method. The results are σ_{Ω+Ω→(ΩΩ)0⁺+γ}=0.03～0.16×10^-29 cm² for p_Ω=100～400 MeV, and the cross sections of η production are about 10^-28 cm² for p_Ω > 880 MeV.     

AlN插入层对AlxGa1-xN/GaN界面电子散射的影响

本文研究AlN作为Al_xGa_1-xN/GaN插入层引起的电子输运性质的变化, 考虑了Al_xGa_1-xN和AlN势垒层的自发极化、压电极化对Al_xGa_1-xN/AlN/GaN双异质结高电子迁移率晶体管(HEMT)中极化电荷面密度、二维电子气(2DEG) 浓度的影响, 分析了AlN厚度与界面粗糙度散射和合金无序散射的关系; 结果表明, 2DEG 浓度、界面粗糙度散射和合金无序散射依赖于AlN层厚度, 插入一层1–3 nm薄的AlN层, 可以明显提高电子迁移率.     

Carrier relaxation in InGaAs

A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range λ = 1.45−2.1 μm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 10¹⁸ cm^-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10^-28 cm⁶ s^-1 is determined.     

Excitation, ionization, and reaction mechanism of a reactivecathodic arc deposition of TiN

This paper discusses the excitation, ionization and reaction mechanism of reactive cathodic arc deposition of TiN. Such arc plasmas art operated in the arc discharge type PVD apparatus. The 50 A arc is operated in N₂ atmosphere of 0.13 to 26.6 Pa. The arc voltage, the electron energy distribution and the spectral intensities are measured as a function of pressure. The deposited films are analyzed by XPS. It follows from the result that (1) the N₂ molecules impact with the high energy electron to be excited or ionized; (2) Ti ⁺⁺ ions which are initially emitted from the cathode spot recombine with electrons and turn Ti⁺ ions and Ti atoms and the recombination ratio increases with increasing pressure; (3) the TiN compound is produced on the substrate surface in the ensuing process, the excited N₂ are adsorbed on the substrate surface, the N ₂ are dissociated to N atoms through collisions with Ti⁺ ions of 40-60 eV, the N atoms react with the Ti atoms to form TiN     

A cold thermionically emitting dusty air plasma formed by radiativeheating of graphite particulates

Formation of an atmospheric pressure dusty air plasma is explored experimentally in this paper. The plasma is created by seeding an air flow with graphite particles and irradiating the particulates with a focused CO₂ laser beam. The graphite particles are, thus, heated to thermionically emitting temperatures, and average particle temperatures and average particle number densities are measured. The presence of charges is inferred both from these measured quantities using a simple theoretical transient model, and experimentally by applying a dc bias across the irradiated region. It is found that an electron density of ~6.7 × 10⁵ cm^-3 (6.7 × 10¹¹ m^-3) can be produced at steady state in the presence of O₂. This value can be increased to 3.6 × 10⁷ cm^-3 (3.6 × 10¹³ m ^-1) in the ideal case where an electron attachment to O₂ is suppressed and where a lower work function particulate is used     

Coherent and incoherent XUV emission in helium and neon,laser-driven plasmas

The authors present results of measurements of high-order harmonic generation and XUV spontaneous emission in helium and neon plasmas excited by a short pulse laser at intensities between 10¹⁴ and 5×10¹⁷ W/cm². They compare the observed behavior of the harmonics with recent single atom calculations in helium. A wavelength dependence to the efficiency of harmonic generation that has not been previously reported is observed. Line emission from excited state transitions in Ne⁷⁺ in a short pulse laser-driven plasma is also observed. In particular, strong emission and a rapid recombination rate for the 9.8-nm (3d-2p) transition that is a possible candidate for a recombination-pumped X-ray laser is shown     

The Two-Nucleon Mechanism for the Neutrinoless Double Beta Decay and the BCS Nuclear Wave Function

A method of using the Bardeen-Cooper-Schrieffer (BCS) nuclear wave function to treat the two-nucleon mechanism for neutiinoless double beta decay process 0⁺ → 0⁺ is proposed.The neutrinoless decay mode and the neutrinoless decay accompanied by a Majoron emission mode of ⁸²Se are studikd. Our cdculated results show that to reproduce the experimental value of γ^(ov) > 1.8 × 10²² yr for neutrinoless double beta decai of ⁸²Se the Majorana neutrino mass m_v < 6.2 eV and the mixing parameter of right-handed current η < 7.0 × 10^-6 In the emission with a Majoron mode the effective Majoron coupling to neutrino is deduced from the experimental value of γ^(ov,H) > 4.4 × 10²⁰ yr for ⁸²Se with the result H0> < 6.2 × 10^-4.     

快重离子辐照对MoS2热导率的影响研究

利用0.97 GeV的209Bi离子辐照二硫化钼（MoS₂）晶体,辐照注量范围为1×1010～1×1012 ions/cm2,结合原子力显微镜（AFM）观测和Raman光谱分析研究了快重离子辐照对MoS₂热导率的影响。实验结果显示,快重离子辐照在MoS₂中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E_1/2g和A_1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS₂热导率的计算方法,获得了不同辐照注量下MoS₂的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS₂) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS₂ was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS₂ by AFM. The measurement of MoS₂ by Raman spectrometer with high laser power results in the increase of local temperature of MoS₂, which cause the downshift of peaks position and broadening of E_1/2g and A_1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS₂ before and after irradiation was calculated, which show that the thermal conductivity of MoS₂ decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS₂, respectively.     

Pressure limits for the vacuum arc deposition technique

Observations of the cathodic copper plasma expansion at low pressures of He, Ar, and SF₆ showed that, for background gas mass densities of ρ_g=1 to 4×10^-4 kg/m ³ and higher, the plasma and gas are separated into two volumes. A shock wave acts as a boundary between the two volumes. The boundary attains a stationary position once its expansion velocity decreases to the velocity of sound in the background gas. This position corresponds to a distance R_c to the cathode that agrees with a snowplow expansion model, giving R_c ^βf=E_r, where f is a function of the arc current and background gas characteristics, E _r is the erosion rate of the cathode, and β varies between 2.1 and 2.5. The interaction model is based on kinetic energy exchanges between two gas-like volumes without other energy losses. A maximum pressure limit for vacuum arc deposition is set for ρ_g /I=2 to 9×10^-6 kg/m³ A     

掺Er3+碲酸盐玻璃的光谱性质与Judd-Ofelt理论分析

用高温熔融法制备了碲酸盐玻璃(70TeO₂-9B₂O₃-6Nb₂O₅-5Na₂O-10ZnO-1%(质量分数)Er₂O₃)样品。测试了玻璃样品的吸收光谱和荧光光谱。应用Judd-Ofelt理论计算了Er³⁺离子的谱线强度、自发辐射跃迁几率、荧光分支比、辐射寿命等光谱参数,并拟合了相应的强度参数Ω_t(t=2,4,6)(Ω₂=8.01×10^-20cm²,Ω₄=2.09×10^-20cm²,Ω₆=1.15×10^-20cm²)。结果发现该碲酸盐玻璃具有较大的Ω₂值,说明Er—O键的共价性强于它在硅酸盐、锗酸盐、氟化物、铋酸盐和磷酸盐玻璃中的共价性。Er³⁺在碲酸盐玻璃中⁴I_13/2→⁴I_15/2跃迁几率约为492s^-1,表明Er³⁺可能有较强的1.5μm发射。分析了Er³⁺在碲酸盐玻璃中能级⁴I_13/2→⁴I_15/2发射的荧光半峰全宽(FWHM=73nm),并应用McCumber理论计算了Er³⁺的受激发射截面(σ_e=1.08×10^-20cm²),发现其FWHM×σ_e远大于Er³⁺在铋酸盐、磷酸盐、锗酸盐和硅酸盐玻璃中的受激发射截面,说明碲酸盐玻璃是一种制备宽带光纤放大器的优良基质材料。     

Gd3+/Y3+共掺对Nd:CaF2晶体光谱性能的影响

通过坩埚下降法生长了系列共掺Nd,Gd:CaF₂和Nd,Y:CaF₂晶体, 研究了Gd³⁺/Y³⁺共掺对Nd³⁺光谱性能以及Nd:CaF₂晶体晶胞参数的影响规律. 对于0.5 at.%Nd, x at.%Gd(x=2,5,8,10):CaF₂系列晶体, 当调控Gd³⁺掺杂浓度为2 at.%时, 具有最大的荧光寿命499 μs; 当Gd³⁺掺杂浓度为5 at.%时, 具有最大的吸收截面1.47×10^-20 cm², 最大的发射截面1.9×10^-20 cm²; 当Gd³⁺掺杂浓度为8 at.%时, 具有最佳的发射带宽29.03 nm. 对于0.6 at.%Nd, xat.%Y(x=2, 5, 8, 10):CaF₂系列晶体, Y³⁺掺杂浓度为5 at.%时, 有最大的吸收截面2.41×10^-20 cm², 最大的发射截面3.17×10^-20 cm²; 当Y³⁺掺杂浓度为10 at.%时, 具有最长的荧光寿命359.4 μs,并且具有最大发射带宽26 nm.     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

Quasi Three-Body Decay of D Meson

The aim of this work is to provide a phenomenological analysis of the contribution of D~0 meson to K*(892)~0π~+π~-(K*(892)~0-→π~+K~-), K~-π~+ω(ω-→π~+π~-π~0) and K~-π~+?(?(1020)-→ K~+K~-) quasi-three-body decays. The analysis of mentioned multi-body decays is such as to factorize into the three-body decay and several channels observed. Hadronic three-body decays receive both resonant and non-resonant contribution. Based on the factorization method, there are tree and emission annihilation diagrams for these decay modes. In the case of D~0 to vector pseudoscalar states appeared in factored terms, the matrix elements of the vector and axial vector currents between the D~0 and PV mesons can be computed by using D~(*+)pole. Considering the non-resonant and resonant amplitude in our computation,the theoretical values of the branching ratio are(9.78 ± 0.46) × 10~(-3),(2.74 ± 0.17) × 10~(-2), and(3.53 ± 0.23) × 10~(-5), while the experimental results of them are(9.9 ±2.3) × 10~(-3),(2.7 ± 0.5) × 10~(-2), and(4 ± 1.7) × 10~(-5) respectively. Comparing computational analysis values with experimental values show that our results are in approximately agreement with them.