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Carrier relaxation in InGaAs |
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| Authors: | M E Prise M R Taghizadeh B S Wherrett S D Smith |
| Institution: | Physics Dept., Heriot-Watt University, Edinburgh, UK |
| Abstract: | A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range λ = 1.45−2.1 μm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10-28 cm6 s-1 is determined. |
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